Non-Equilibrium Doping of Amorphous Chalcogendies
Optoelectronics Research Centre, University of Southampton; Department of Chemistry, University of Cambridge.
- Techniques used
1) Materials deposition and modification (e.g. sputtering, lithography, and ion implantation)
2) Electrical and optical characterisation and spectroscopy (e.g. J-V, C-V, DLTS, PL, PLE)
3) Device fabrication and characterisation (e.g. pn-junctions, phase change memory, photovoltaic and light emitting diodes)
- Student will require
1) Good aptitude for experimental studies
2) Ability to coordinate parallel activities
3) A good degree in Physics, Electronic Engineering or related subject
4) Willingness to work as part of larger team and contribute fully
- To undertake exploratory research into the potential of using ion-implantation to modify and control the electronic and optical properties of amorphous chalcogenide semiconductors via non-equilibrium doping.
This project will explore the use of ion-implantation to undertake non-equilibrium doping of amorphous chalcogenide materials. Key aims of the work are to establish the potential for electronic modification to enable p- and n-type materials to be realised. The project will involve preparation and deposition (e.g. sputtering) of chalcogenide materials, detailed electrical and optical experimental studies of these materials as a function of implanted ion species, concentration and energy. Promising candidate materials will be explored for device applications including pn-junctions, LEDs, photodetectors, and phase change memory. The project will require collaboration with other researchers working on the project at the Universities of Southampton and Cambridge.