Professor Kevin Homewood

Professor of Semiconductor Optoelectronics

Qualifications: BSc, PhD

Email:
Phone: Work: 01483 68 9285
Room no: 30 ATI 02

Further information

Biography

Professor Homewood started his research career within the Department of Electrical Engineering at the University of Manchester Institute of Science and technology (UMIST) obtaining his PhD in 1981. He subsequently spent a period as a Research Fellow at the University of Hull in the Department of Physics. Kevin was appointed Lecturer in Optoelectronics in the Department of Electronic and Electrical Engineering at Surrey in 1984 and was promoted directly to Reader in Semiconductors in 1994 and then to Professor of Semiconductor Optoelectronics in 1999.

Research Interests

At Surrey he has established world-class facilities in electronic and optical characterisation of semiconductors and an active personal research group, which he has led for the past 19 years. He has recently concentrated on developing novel approaches to silicon based optoelectronics and this work is recognised to be world leading in many areas. Kevin is an acknowledged world expert in semiconductor materials and devices and has published more than 180 papers in international scientific journals, including two papers in NATURE that have stimulated international research efforts in semiconducting silicides and silicon optoelectronics. He was recently awarded a prestigous European Research Council Advanced Investigator Grant (SILAMPS) of around £ 2,000,000 to develop silicon based lasers and optical amplifiers over the next five years. He was a cofounder and is a Director of SiLight Technology Ltd.

Research Collaborations

European Research Council Advanced Investigator Grant (SILAMPS)

Publications

Highlights

  • Lourenco MA, Gwilliam RM, Homewood KP. (2008) 'Silicon light emitting diodes emitting over the 1.2-1.4 mu m wavelength region in the extended optical communication band'. AMER INST PHYSICS APPLIED PHYSICS LETTERS, 92 (16) Article number ARTN 161108
    doi: 10.1063/1.2916824
    Full text is available at: http://epubs.surrey.ac.uk/428/
  • Lourenco MA, Gwilliam RM, Homewood KP. (2007) 'Extraordinary optical gain from silicon implanted with erbium'. AMER INST PHYSICS APPLIED PHYSICS LETTERS, 91 (14) Article number ARTN 141122
    doi: 10.1063/1.2797975
    Full text is available at: http://epubs.surrey.ac.uk/258/
  • Lourenco MA, Milosavljevic M, Shao G, Gwilliam RM, Homewood KP. (2007) 'Dislocation engineered silicon light emitting devices'. ELSEVIER SCIENCE SA THIN SOLID FILMS, Kyoto, JAPAN: Asia-Pacific Conference on Semiconducting Silicides 515 (22), pp. 8113-8117.
    doi: 10.1016/j.tsf.2007.02.022
  • Wong SP, Chow CF, Roller J, Chong YT, Li Q, Lourenco MA, Homewood KP. (2007) 'Structures and light emission properties of nanocrystalline FeSi2/Si formed by ion beam synthesis with a metal vapor vacuum arc ion source'. ELSEVIER SCIENCE SA THIN SOLID FILMS, Kyoto, JAPAN: Asia-Pacific Conference on Semiconducting Silicides 515 (22), pp. 8122-8128.
    doi: 10.1016/j.tsf.2007.02.073

Journal articles

  • Berhanuddin DD, Lourenço MA, Jeynes C, Milosavljević M, Gwilliam RM, Homewood KP. (2012) 'Structural analysis of silicon co-implanted with carbon and high energy proton for the formation of the lasing G-centre'. Journal of Applied Physics, 112 (10)
    doi: 10.1063/1.4766390
  • Berhanuddin DD, Lourenco MA, Gwilliam RM, Homewood KP. (2012) 'Co-Implantation of Carbon and Protons: An Integrated Silicon Device Technology Compatible Method to Generate the Lasing G-Center'. WILEY-V C H VERLAG GMBH ADVANCED FUNCTIONAL MATERIALS, 22 (13), pp. 2709-2712.
    doi: 10.1002/adfm.201103034
  • Antwis L, Gwilliam R, Smith A, Jeynes C, Homewood K. (2012) 'Characterization of a-FeSi /c-Si heterojunctions for photovoltaic applications'. Semiconductor Science and Technology, 27 (3)
    doi: 10.1088/0268-1242/27/3/035016
  • Petrović S, Peruško D, Mitrić M, Gaković B, Milosavljević M, Kovac J, Dražić G, Homewood KP. (2012) 'Formation of intermetallic phase in Ni/Ti multilayer structure by ion implantation and thermal annealing'. Intermetallics, 25, pp. 27-33.
    doi: 10.1016/j.intermet.2012.02.007
  • Antwis L, Gwilliam R, Smith A, Jeynes C, Homewood K. (2012) 'Characterization of a-FeSi /c-Si heterojunctions for photovoltaic applications'. Semiconductor Science and Technology, 27 (3)
    doi: 10.1088/0268-1242/27/3/035016
  • Milosavljevic M, Milinovic V, Perusko D, Grce A, Stojanovic M, Pjevic D, Mitric M, Kovac J, Homewood KP. (2011) 'Stability of nano-scaled Ta/Ti multilayers upon argon ion irradiation'. ELSEVIER SCIENCE BV NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 269 (19), pp. 2090-2097.
    doi: 10.1016/j.nimb.2011.06.017
  • Milosavljevic M, Lourenco MA, Gwilliam RM, Homewood KP. (2011) 'Role of heavy ion co-implantation and thermal spikes on the development of dislocation loops in nanoengineered silicon light emitting diodes'. AMER INST PHYSICS JOURNAL OF APPLIED PHYSICS, 110 (3) Article number ARTN 033508
    doi: 10.1063/1.3614036
    Full text is available at: http://epubs.surrey.ac.uk/7826/
  • Lourenço M, Gwilliam R, Homewood K. (2011) 'Eye-safe 2 μm luminescence from thulium-doped silicon.'. Optical Society of America Opt Lett, United States: 36 (2), pp. 169-171.
    doi: 10.1364/OL.36.000169
    Full text is available at: http://epubs.surrey.ac.uk/7829/

    Abstract

    We report on photoluminescence in the 1.7-2.1 μm range of silicon doped with thulium. This is achieved by the implantation of Tm into silicon that has been codoped with boron to reduce the thermal quenching. At least six strong lines can be distinguished at 80 K; at 300 K, the spectrum is dominated by the main emission at 2 μm. These emissions are attributed to the trivalent Tm(3+) internal transitions between the first excited state and the ground state.

  • Lourenço MA, Homewood KP. (2011) 'Crystalline-silicon-based infra-red LEDs and routes to laser diodes'. Elsevier Thin Solid Films, 519 (24), pp. 8441-8445.
    doi: 10.1016/j.tsf.2011.05.020
    Full text is available at: http://epubs.surrey.ac.uk/7853/

    Abstract

    We review progress in silicon LEDs using dislocation engineering to achieve high temperature operation, a process that is fully CMOS (Complementary Metal Oxide Semiconductor) compatible. We concentrate on devices operating in the near infra-red where high value applications are. The need for silicon emitters, lasers and optical amplifiers is discussed followed by an outline of previous approaches and possible future routes explored. Results on gain in silicon are reported and routes to electrically pumped injection lasers and optical amplifiers considered. Extension of 1.1 and 1.5 μm devices to other wavelengths is discussed

  • Milosavljević M, Milinović V, Peruško D, Grce A, Stojanović M, Pjević D, Mitrić M, Kovač J, Homewood KP. (2011) 'Stability of nano-scaled Ta/Ti multilayers upon argon ion irradiation'. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms,
    doi: 10.1016/j.nimb.2011.06.017
  • Maeda Y, Terai Y, Homewood KP, Takarabe K, Yamaguchi K, Suzuki M, Sadoh T, Nakamura Y. (2011) 'Preface'. Thin Solid Films, 519 (24), pp. 8433-8433.
    doi: 10.1016/j.tsf.2011.05.018
  • Fedotova JA, Przewoznik J, Kapusta C, Milosavljevi M, Kasiuk JV, Zukrowski J, Sikora M, Maximenko AA, Szepietowska D, Homewood KP. (2011) 'Magnetoresistance in FeCoZrAl2O3 nanocomposite films containing metal coreoxide shell nanogranules'. Journal of Physics D: Applied Physics, 44 (49) Article number 495001
    doi: 10.1088/0022-3727/44/49/495001
  • Milosavljevic M, Wong L, Lourenco M, Valizadeh R, Colligon J, Shao G, Homewood K. (2010) 'Correlation of Structural and Optical Properties of Sputtered FeSi2 Thin Films'. JAPAN SOC APPLIED PHYSICS JAPANESE JOURNAL OF APPLIED PHYSICS, 49 (8) Article number ARTN 081401
    doi: 10.1143/JJAP.49.081401
  • Lourenco MA, Opoku C, Gwilliam RM, Homewood KP. (2010) 'Photoluminescence study of thulium-doped silicon substrates for light emitting diodes'. ELSEVIER SCIENCE BV OPTICAL MATERIALS, Herceg Novi, MONTENEGRO: 32 (12), pp. 1597-1600.
    doi: 10.1016/j.optmat.2010.05.026
  • Homewood KP, Lourenco MA, Gwilliam RM. (2010) 'Nano-engineered silicon light emitting diodes and optically active waveguides'. ELSEVIER SCIENCE BV OPTICAL MATERIALS, Herceg Novi, MONTENEGRO: 32 (12), pp. 1601-1605.
    doi: 10.1016/j.optmat.2010.05.025
  • Sun CM, Tsang HK, Wong SP, Cheung WY, Ke N, Lourenco MA, Homewood KP. (2009) 'Electroluminescence from metal-oxide-silicon tunneling diode with ion-beam-synthesized beta-FeSi2 precipitates embedded in the active region'. ELSEVIER SCIENCE BV NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 267 (7), pp. 1081-1084.
    doi: 10.1016/j.nimb.2009.01.113
  • Lourenco MA, Homewood KP. (2008) 'Dislocation-engineered silicon light emitters for photonic integration'. IOP PUBLISHING LTD SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 23 (6) Article number ARTN 064005
    doi: 10.1088/0268-1242/23/6/064005
  • Lourenco MA, Gwilliam RM, Homewood KP. (2008) 'Silicon light emitting diodes emitting over the 1.2-1.4 mu m wavelength region in the extended optical communication band'. AMER INST PHYSICS APPLIED PHYSICS LETTERS, 92 (16) Article number ARTN 161108
    doi: 10.1063/1.2916824
    Full text is available at: http://epubs.surrey.ac.uk/428/
  • Wong L, Milosavljevic M, Lourenco MA, Shao G, Valizadeh R, Colligon JS, Homewood KP. (2008) 'Annealing and deposition temperature dependence of the bandgap of amorphous FeSi(2) fabricated by co-sputter deposition'. IOP PUBLISHING LTD SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 23 (3) Article number ARTN 035007
    doi: 10.1088/0268-1242/23/3/035007
  • Milgram JN, Knights AP, Homewood KP, Gwilliam RM. (2007) 'Considerations for interpretation of luminescence from silicon-on-insulator light emitting structures'. IOP PUBLISHING LTD SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 22 (10), pp. 1104-1110.
    doi: 10.1088/0268-1242/22/10/005
  • Lourenco MA, Gwilliam RM, Homewood KP. (2007) 'Extraordinary optical gain from silicon implanted with erbium'. AMER INST PHYSICS APPLIED PHYSICS LETTERS, 91 (14) Article number ARTN 141122
    doi: 10.1063/1.2797975
    Full text is available at: http://epubs.surrey.ac.uk/258/
  • Gao Y, Shao GS, Li Q, Xu YM, Wong SP, Zhou MY, Lourenco MA, Homewood KP. (2007) 'Microstructural and optical properties of semiconducting MnSi1.7 synthesized by ion implantation'. INST PURE APPLIED PHYSICS JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 46 (9A), pp. 5777-5779.
    doi: 10.1143/JJAP.46.5777
  • Maeda Y, Homewood KP, Sadoh T, Terai Y, Yamaguchi K, Akiyama K. (2007) 'Asia-Pacific conference on semiconducting silicides science and technology towards sustainable optoelectronics (APAC-SILICIDE 2006) July 29-31, 2006, Kyoto - Preface'. ELSEVIER SCIENCE SA THIN SOLID FILMS, 515 (22), pp. 8101-8101.
    doi: 10.1016/j.tsf.2007.02.019
  • Gao Y, Chong YT, Chow CF, Wong SP, Homewood KP, Li Q. (2007) 'Post-annealing effect on the microstructure and photoluminescence properties of the ion beam synthesized FeSi2 precipitates in Si'. ELSEVIER SCIENCE BV NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 259 (2), pp. 871-874.
    doi: 10.1016/j.nimb.2007.02.102
  • Maeda Y, Homewood KP, Sadoh T, Terai Y, Yamaguchi K, Akiyama K. (2007) 'Editorial'. Thin Solid Films, 515 (22), pp. 8101-8101.
    doi: 10.1016/j.tsf.2007.02.019
  • Milosavljevic M, Lourenco MA, Shao G, Gwilliam RM, Homewood KP. (2006) 'Optimising dislocation-engineered silicon light-emitting diodes'. SPRINGER APPLIED PHYSICS B-LASERS AND OPTICS, 83 (2), pp. 289-294.
    doi: 10.1007/s00340-006-2149-6
  • Milosavljevic M, Shao G, Lourenco MA, Gwilliam RM, Homewood KP, Edwards SP, Valizadeh R, Colligon JS. (2005) 'Transition from amorphous to crystalline beta phase in co-sputtered FeSi2 films as a function of temperature'. AMER INST PHYSICS JOURNAL OF APPLIED PHYSICS, 98 (12) Article number ARTN 123506
    doi: 10.1063/1.2148629
    Full text is available at: http://epubs.surrey.ac.uk/464/
  • Homewood KP, Lourenco MA, Milosavljevic M, Shao G, Gwilliam RM. (2005) 'Dislocation engineered silicon for light emission'. IEEE 2005 IEEE LEOS Annual Meeting Conference Proceedings (LEOS), Sydney, AUSTRALIA: , pp. 608-609.
    Full text is available at: http://epubs.surrey.ac.uk/1752/

Conference papers

  • Lourenço MA, Wong L, Gwilliam RM, Homewood KP. (2010) 'Luminescence of Tm3+in dislocation engineered silicon substrates'. Proceedings of 7th IEEE International Conference on Group IV Photonics, Beijing, China: 7th IEEE GFP, pp. 159-161.
    doi: 10.1109/GROUP4.2010.5643395
  • Homewood KP, Lourenço MA, Gwilliam RM. (2010) '1.1 to 1.6 μm silicon light emitting diodes and optical gain'. Proceedings of IEEE 7th International Conference on Group IV Photonics GFP, Beijing, China: 7th IEEE GFP, pp. 302-304.
    doi: 10.1109/GROUP4.2010.5643347
  • Antwis L, Wong L, Smith A, Homewood K, Jeynes C, Gwilliam R. (2010) 'Optimization and characterisation of amorphous iron disilicide formed by ion beam mixing of Fe/Si multilayer structures for photovoltaic applications'. AIP Conference Proceedings, Kyoto, Japan: Ion Implantation Technology 2101: 18th International Conference on Ion Implantation Technology IIT 2010 1321, pp. 278-281.
    doi: 10.1063/1.3548379
  • Milosavljevic M, Lourenco MA, Shao G, Gwilliam RM, Homewood KP. (2008) 'Formation of dislocation loops in silicon by ion irradiation for silicon light emitting diodes'. ELSEVIER SCIENCE BV NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Florence, ITALY: 9th European Conference on Accelerators in Applied Research and Technology 266 (10), pp. 2470-2474.
    doi: 10.1016/j.nimb.2008.03.021
  • Gao Y, Chen RS, Zhou MY, Lourenco MA, Homewood KP, Shao G. (2008) 'Structural, electronic, and optical properties of Mn4Si 7'. Proceedings of SPIE: Thin Film Materials, Shanghai, China: Sixth International Conference on Thin Film Physics and Applications (TFPA 2007) 6984
    doi: 10.1117/12.792271
  • Wong SP, Chow CF, Roller J, Chong YT, Li Q, Lourenco MA, Homewood KP. (2007) 'Structures and light emission properties of nanocrystalline FeSi2/Si formed by ion beam synthesis with a metal vapor vacuum arc ion source'. ELSEVIER SCIENCE SA THIN SOLID FILMS, Kyoto, JAPAN: Asia-Pacific Conference on Semiconducting Silicides 515 (22), pp. 8122-8128.
    doi: 10.1016/j.tsf.2007.02.073
  • Lourenco MA, Milosavljevic M, Shao G, Gwilliam RM, Homewood KP. (2007) 'Dislocation engineered silicon light emitting devices'. ELSEVIER SCIENCE SA THIN SOLID FILMS, Kyoto, JAPAN: Asia-Pacific Conference on Semiconducting Silicides 515 (22), pp. 8113-8117.
    doi: 10.1016/j.tsf.2007.02.022
  • Ishibashi Y, Kobayashi T, Prins AD, Nakahara J, Lourenco MA, Gwilliam RM, Homewood KP. (2007) 'Excitation and pressure effects on photoluminescence from dislocation engineered silicon material'. WILEY-V C H VERLAG GMBH PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Barcelona, SPAIN: 12th International Conference on High Pressure Semiconductor Physics (HPSP-12) 244 (1), pp. 402-406.
    doi: 10.1002/pssb.200672525
  • Lourenco MA, Milosavljevic M, Shao G, Gwilliam RM, Homewood KP. (2006) 'Boron engineered dislocation loops for efficient room temperature silicon light emitting diodes'. ELSEVIER SCIENCE SA THIN SOLID FILMS, Singapore, SINGAPORE: 3rd International Conference on Materials for Advanced Technologies/9th International Conference on Advanced Materials 504 (1-2), pp. 36-40.
    doi: 10.1016/j.tsf.2005.09.036

Teaching

  • Silicon Device Technology (L3)
  • Optoelectronics (L3)
  • Final UG and MSc Projects
  • Tutorials

Departmental Duties

Semiconductor Teaching Coordinator

Projects are available in the general area of silicon based light emission, lasing, optical amplification and photovoltaic devices.

For further details contact me by email: k.homewood@surrey.ac.uk

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