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Professor Russell Gwilliam

Professor

Email:
Phone: Work: 01483 68 9845
Room no: 16 NC 00

Further information

Publications

Highlights

  • Smith AJ, Gwilliam RM, Stolojan V, Knights AP, Coleman PG, Kallis A, Yeong SH. (2009) 'Enhancement of phosphorus activation in vacancy engineered thin silicon-on-insulator substrates'. AMER INST PHYSICS J APPL PHYS, 106 (10) Article number 103514
    doi: 10.1063/1.3262527
  • Slotte J, Rummukainen M, Tuomisto F, Markevich VP, Peaker AR, Jeynes C, Gwilliam RM. (2008) 'Evolution of vacancy-related defects upon annealing of ion-implanted germanium'. AMER PHYSICAL SOC PHYS REV B, 78 (8) Article number 085202
    doi: 10.1103/PhysRevB.78.085202
    Full text is available at: http://epubs.surrey.ac.uk/240/
  • Lourenco MA, Gwilliam RM, Homewood KP. (2007) 'Extraordinary optical gain from silicon implanted with erbium'. AMER INST PHYSICS APPL PHYS LETT, 91 (14) Article number 141122
    doi: 10.1063/1.2797975
    Full text is available at: http://epubs.surrey.ac.uk/258/

Journal articles

  • Milosavljevic M, Lourenco MA, Gwilliam RM, Homewood KP. (2011) 'Role of heavy ion co-implantation and thermal spikes on the development of dislocation loops in nanoengineered silicon light emitting diodes'. AMER INST PHYSICS J APPL PHYS, 110 (3) Article number 033508
    doi: 10.1063/1.3614036
    Full text is available at: http://epubs.surrey.ac.uk/7826/
  • Scapellato GG, Boninelli S, Napolitani E, Bruno E, Smith AJ, Mirabella S, Mastromatteo M, De Salvador D, Gwilliam R, Spinella C, Carnera A, Priolo F. (2011) 'Self-interstitials injection in crystalline Ge induced by GeO2 nanoclusters'. AMER PHYSICAL SOC PHYS REV B, 84 (2) Article number 024104
    doi: 10.1103/PhysRevB.84.024104
    Full text is available at: http://epubs.surrey.ac.uk/7827/
  • Coleman PG, Nash D, Edwardson CJ, Knights AP, Gwilliam RM. (2011) 'The evolution of vacancy-type defects in silicon-on-insulator structures studied by positron annihilation spectroscopy'. AMER INST PHYSICS J APPL PHYS, 110 (1) Article number 016104
    doi: 10.1063/1.3605487
    Full text is available at: http://epubs.surrey.ac.uk/7828/
  • Loiacono R, Reed GT, Mashanovich GZ, Gwilliam R, Henley SJ, Hu YF, Feldesh R, Jones R. (2011) 'Laser erasable implanted gratings for integrated silicon photonics'. Optical Society of America Optics Express, 19 (11), pp. 10728-10734.
    doi: 10.1364/OE.19.010728
    Full text is available at: http://epubs.surrey.ac.uk/7086/
  • Crowe IF, Halsall MP, Hulko O, Knights AP, Gwilliam RM, Wojdak M, Kenyon AJ. (2011) 'Probing the phonon confinement in ultrasmall silicon nanocrystals reveals a size-dependent surface energy'. AMER INST PHYSICS J APPL PHYS, 109 (8) Article number 083534
    doi: 10.1063/1.3575181
    Full text is available at: http://epubs.surrey.ac.uk/7825/
  • Lourenço M, Gwilliam R, Homewood K. (2011) 'Eye-safe 2 μm luminescence from thulium-doped silicon.'. Optical Society of America Opt Lett, United States: 36 (2), pp. 169-171.
    doi: 10.1364/OL.36.000169
    Full text is available at: http://epubs.surrey.ac.uk/7829/
  • England J, Phaneuf MW, Laquerre A, Smith A, Gwilliam R. (2011) 'Ion beam assisted crystallization of amorphous silicon layers using high current density Gallium beams'. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms,
    doi: 10.1016/j.nimb.2011.01.111
  • Knights AP, Bradley JDB, Hulko O, Stevanovic DV, Edwards CJ, Kallis A, Coleman PG, Crowe IF, Halsall MP, Gwilliam RM. (2011) 'Probing the formation of silicon nano-crystals (Si-ncs) using variable energy positron annihilation spectroscopy'. Journal of Physics: Conference Series, 262 (1)
    doi: 10.1088/1742-6596/262/1/012031
  • Scapellato GG, Bruno E, Smith AJ, Napolitani E, De Salvador D, Mirabella S, Mastromatteo M, Carnera A, Gwilliam R, Priolo F. (2011) 'Role of self-interstitials on B diffusion in Ge'. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms,
    doi: 10.1016/j.nimb.2011.08.041
  • Crowe IF, Kashtiban RJ, Sherliker B, Bangert U, Halsall MP, Knights AP, Gwilliam RM. (2010) 'Spatially correlated erbium and Si nanocrystals in coimplanted SiO2 after a single high temperature anneal'. AMER INST PHYSICS J APPL PHYS, 107 (4) Article number 044316
    doi: 10.1063/1.3294645
  • Doylend JK, Knights AP, Luff BJ, Shafiiha R, Asghari M, Gwilliam RM. (2010) 'Modifying functionality of variable optical attenuator to signal monitoring through defect engineering'. INST ENGINEERING TECHNOLOGY-IET ELECTRON LETT, 46 (3), pp. 234-235.
    doi: 10.1049/el.2010.2785
  • Wright NM, Smith AJ, Litvinenko K, Gwilliam R, Mashanovich G, Reed GT. (2010) 'Effects of annealing silicon ion irradiated rib waveguides with respect to free carrier lifetime'. SPIE-INT SOC OPTICAL ENGINEERING SILICON PHOTONICS V, San Francisco, CA: 7606 Article number 76060H
    doi: 10.1117/12.838582
  • Loiacono R, Reed GT, Gwilliam R, Mashanovich GZ, O'Faolain L, Krauss T, Lulli G, Jeynes C, Jones R. (2010) 'Germanium implanted Bragg gratings in Silicon on Insulator waveguides'. SPIE-INT SOC OPTICAL ENGINEERING SILICON PHOTONICS V, San Francisco, CA: 7606 Article number 76060G
    doi: 10.1117/12.839502
  • Homewood KP, Lourenco MA, Gwilliam RM. (2010) 'Nano-engineered silicon light emitting diodes and optically active waveguides'. ELSEVIER SCIENCE BV OPTICAL MATERIALS, Herceg Novi, MONTENEGRO: 32 (12), pp. 1601-1605.
    doi: 10.1016/j.optmat.2010.05.025
  • Collart EJH, Teel R, Free C, Wan Z, Kopalidis P, Razali MA, Gwilliam R, Smith A, Tsidilkovski E, Karpowicz T. (2010) 'Process characterization of low temperature ion implantation using ribbon beam and spot beam on the AIBT iPulsar high current'. AIP Conference Proceedings, 1321, pp. 49-52.
    doi: 10.1063/1.3548462
  • Halsall MP, Crowe IF, Hylton NP, Hulko O, Knights AP, Ruffell S, Gwilliam RM, Wojdak M, Kenyon AJ. (2010) 'Novel processing for Si-nanocrystal based photonic materials'. ECS Transactions, 28 (3), pp. 3-13.
    doi: 10.1149/1.3367207
  • Lourenco MA, Opoku C, Gwilliam RM, Homewood KP. (2010) 'Photoluminescence study of thulium-doped silicon substrates for light emitting diodes'. ELSEVIER SCIENCE BV OPTICAL MATERIALS, Herceg Novi, MONTENEGRO: 32 (12), pp. 1597-1600.
    doi: 10.1016/j.optmat.2010.05.026
  • Kashtiban RJ, Bangert U, Crowe I, Halsall P, Sherliker B, Harvey J, Eccles J, Knights AP, Gwilliam R, Gass M. (2010) 'Structural and compositional study of Erbium-doped silicon nanocrystals by HAADF, EELS and HRTEM techniques in an aberration corrected STEM'. Journal of Physics: Conference Series, 209
    doi: 10.1088/1742-6596/209/1/012043
  • Smith AJ, Gwilliam RM, Stolojan V, Knights AP, Coleman PG, Kallis A, Yeong SH. (2009) 'Enhancement of phosphorus activation in vacancy engineered thin silicon-on-insulator substrates'. AMER INST PHYSICS J APPL PHYS, 106 (10) Article number 103514
    doi: 10.1063/1.3262527
  • Rudawski NG, Jones KS, Gwilliam R. (2009) 'Stressed solid-phase epitaxial growth of (011) Si'. MATERIALS RESEARCH SOC J MATER RES, 24 (2), pp. 305-309.
    doi: 10.1557/JMR.2009.0056
  • Ali-Boucetta H, Bensalem R, Alleg S, Smith A, Gwilliam R, Sealy B. (2009) 'Simulation of electrical properties in ion implanted GaAs'. Physics Procedia, 2 (3), pp. 797-801.
    doi: 10.1016/j.phpro.2009.11.027
  • Wright NM, Thomson DJ, Litvinenko KL, Headley WR, Smith AJ, Knights AP, Deane JHB, Gardes FY, Mashanovich GZ, Gwilliam R, Reed GT. (2009) 'Free carrier lifetime modification in silicon'. SPIE-INT SOC OPTICAL ENGINEERING SILICON PHOTONICS IV, San Jose, CA: 7220 Article number 722006
    doi: 10.1117/12.810907
  • Roschuk T, Wilson PRJ, Li J, Dunn KA, Wojcik J, Crowe IF, Gwilliam RM, Halsall MP, Knights AP, Mascher P. (2009) 'Structure and luminescence of rare earth-doped silicon oxides studied through XANES and XEOL'. ECS Transactions, 25 (9), pp. 213-222.
    doi: 10.1149/1.3211180
  • Bennett NS, Cowern NEB, Smith AJ, Kah M, Gwilliam RM, Sealy BJ, Noakes TCQ, Bailey P, Giubertoni D, Bersani M. (2008) 'Differential Hall characterisation of ultrashallow doping in advanced Si-based materials'. ELSEVIER SCIENCE BV MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, Strasbourg, FRANCE: 154, pp. 229-233.
    doi: 10.1016/j.mseb.2008.10.003
  • Wright NM, Thomson DJ, Litvinenko KL, Headley WR, Smith AJ, Knights AP, Deane JHB, Gardes FY, Mashanovich GZ, Gwilliam R, Reed GT. (2008) 'Free carrier lifetime modification for silicon waveguide based devices'. OPTICAL SOC AMER OPT EXPRESS, 16 (24), pp. 19779-19784.
    doi: 10.1364/OE.16.019779
    Full text is available at: http://epubs.surrey.ac.uk/7092/
  • Bennett NS, Radamson HH, Beer CS, Smith AJ, Gwilliam RM, Cowern NEB, Sealy BJ. (2008) 'Enhanced n-type dopant solubility in tensile-strained Si'. ELSEVIER SCIENCE SA THIN SOLID FILMS, 517 (1), pp. 331-333.
    doi: 10.1016/j.tsf.2008.08.072
  • Slotte J, Rummukainen M, Tuomisto F, Markevich VP, Peaker AR, Jeynes C, Gwilliam RM. (2008) 'Evolution of vacancy-related defects upon annealing of ion-implanted germanium'. AMER PHYSICAL SOC PHYS REV B, 78 (8) Article number 085202
    doi: 10.1103/PhysRevB.78.085202
    Full text is available at: http://epubs.surrey.ac.uk/240/
  • Rudawski NG, Jones KS, Gwilliam R. (2008) 'Dopant-stress synergy in Si solid-phase epitaxy'. AMER INST PHYSICS APPL PHYS LETT, 92 (23) Article number 232110
    doi: 10.1063/1.2945291
  • O'Reilly L, Horan K, McNally PJ, Bennett NS, Cowern NEB, Lankinen A, Sealy BJ, Gwilliam RM, Noakes TCQ, Bailey P. (2008) 'Constraints on micro-Raman strain metrology for highly doped strained Si materials'. AMER INST PHYSICS APPL PHYS LETT, 92 (23) Article number 233506
    doi: 10.1063/1.2942392
    Full text is available at: http://epubs.surrey.ac.uk/260/
  • Rudawski NG, Jones KS, Gwilliam R. (2008) 'Stressed solid-phase epitaxial growth of ion-implanted amorphous silicon'. ELSEVIER SCIENCE SA MAT SCI ENG R, 61 (1-6), pp. 40-58.
    doi: 10.1016/j.mser.2008.02.002
  • Rudawski NG, Jones KS, Gwilliam R. (2008) 'Kinetics and morphological instabilities of stressed solid-solid phase transformations'. AMER PHYSICAL SOC PHYS REV LETT, 100 (16) Article number 165501
    doi: 10.1103/PhysRevLett.100.165501
  • Lourenco MA, Gwilliam RM, Homewood KP. (2008) 'Silicon light emitting diodes emitting over the 1.2-1.4 mu m wavelength region in the extended optical communication band'. AMER INST PHYSICS APPL PHYS LETT, 92 (16) Article number 161108
    doi: 10.1063/1.2916824
    Full text is available at: http://epubs.surrey.ac.uk/428/
  • Knights AP, Bulk MP, Jessop PE, Waugh P, Loiacono R, Mashanovich GZ, Reed GT, Gwilliam RM. (2008) 'Optical filters utilizing ion implanted Bragg gratings in SOI waveguides'. Hindawi Publishing Corporation Advances in Optical Technologies, 2008 Article number 276165
    doi: 10.1155/2008/276165
    Full text is available at: http://epubs.surrey.ac.uk/7094/
  • Cowern NEB, Smith AJ, Bennett N, Sealy BJ, Gwilliam R, Webb RP, Colombeau B, Paul S, Lerch W, Pakfar A. (2008) 'Vacancy engineering - An ultra-low thermal budget method for high-concentration 'diffusionless' implantation doping'. Materials Science Forum, 573-574, pp. 295-304.
    doi: 10.4028/www.scientific.net/MSF.573-574.295
  • Kah M, Smith AJ, Hamilton JJ, Sharp J, Yeong SH, Colombeau B, Gwilliam R, Webb RP, Kirkby KJ. (2008) 'Interaction of the end of range defect band with the upper buried oxide interface for B and BF2 implants in Si and silicon on insulator with and without preamorphizing implant'. A V S AMER INST PHYSICS JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Napa, CA: 26 (1), pp. 347-350.
    doi: 10.1116/1.2816936
  • Bennett NS, Cowern NEB, Smith AJ, Kah M, Gwilliam RM, Sealy BJ, Noakes TCQ, Bailey P, Giubertoni D, Bersani M. (2008) 'Differential Hall characterisation of ultrashallow doping in advanced Si-based materials'. ELSEVIER SCIENCE BV MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, Strasbourg, FRANCE: 154, pp. 229-233.
    doi: 10.1016/j.mseb.2008.10.003
  • Bennett NS, Smith AJ, Gwilliam RM, Webb RP, Sealy BJ, Cowern NEB, O'Reilly L, McNally PJ. (2008) 'Antimony for n-type metal oxide semiconductor ultrashallow junctions in strained Si: A superior dopant to arsenic?'. A V S AMER INST PHYSICS JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Napa, CA: 26 (1), pp. 391-395.
    doi: 10.1116/1.2816929
  • Renaud CC, Pantouvaki M, Gregoire S, Lealman I, Cannard P, Cole S, Moore R, Gwilliam R, Seeds AJ. (2007) 'A monolithic MQW InP-InGaAsP-Based optical comb generator'. IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC IEEE J QUANTUM ELECT, 43 (11-12), pp. 998-1005.
    doi: 10.1109/JQE.2007.904522
  • Rudawski NG, Jones KS, Gwilliam R. (2007) 'Solid phase epitaxy in uniaxially stressed (001) Si'. AMER INST PHYSICS APPL PHYS LETT, 91 (17) Article number 172103
    doi: 10.1063/1.2801518
  • Milgram JN, Knights AP, Homewood KP, Gwilliam RM. (2007) 'Considerations for interpretation of luminescence from silicon-on-insulator light emitting structures'. IOP PUBLISHING LTD SEMICOND SCI TECH, 22 (10), pp. 1104-1110.
    doi: 10.1088/0268-1242/22/10/005
  • Lourenco MA, Gwilliam RM, Homewood KP. (2007) 'Extraordinary optical gain from silicon implanted with erbium'. AMER INST PHYSICS APPL PHYS LETT, 91 (14) Article number 141122
    doi: 10.1063/1.2797975
    Full text is available at: http://epubs.surrey.ac.uk/258/
  • Pantouvaki M, Renaud CC, Cannard P, Robertson MJ, Gwilliam R, Seeds AJ. (2007) 'Fast tuneable InGaAsP DBR laser using quantum-confined stark-effect-induced refractive index change'. IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC IEEE J SEL TOP QUANT, 13 (5), pp. 1112-1121.
    doi: 10.1109/JSTQE.2007.906046
  • Gwilliam R, Cowern NEB, Colombeau B, Sealy B, Smith AJ. (2007) 'Vacancy engineering for ultra-shallow junction formation'. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 261 (1-2 SPEC. ISS.), pp. 600-603.
  • Reed GT, Yang PY, Headley WR, Waugh PM, Mashanovich GZ, Thomson D, Gwilliam RM, Teo EJ, Blackwood DJ, Breese MBH, Bettiol AA. (2007) 'Novel fabrication techniques for silicon photonics'. SPIE-INT SOC OPTICAL ENGINEERING SILICON PHOTONICS II, San Jose, CA: 6477 Article number 64770E
    doi: 10.1117/12.705180
  • Seeds AJ, Renaud CC, Pantouvaki M, Robertson M, Lealman I, Rogers D, Firth R, Cannard PJ, Moore R, Gwilliam R. (2007) 'Photonic synthesis of THz signals'. Proceedings of the 36th European Microwave Conference, EuMC 2006, , pp. 1107-1110.
  • Zavada JM, Nepal N, Lin JY, Jiang HX, Brown E, Hommerich U, Hite J, Thaler GT, Abernathy CR, Pearton SJ, Gwilliam R. (2006) 'Ultraviolet photoluminescence from Gd-implanted AlN epilayers'. AMER INST PHYSICS APPL PHYS LETT, 89 (15) Article number 152107
    doi: 10.1063/1.2357552
  • Webb M, Jeynes C, Gwilliam R, Royle A, Sealy B. (2006) 'Characterising ion-cut in GaAs by Rutherford backscattering spectroscopy'. ELSEVIER SCIENCE BV NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Seville, SPAIN: 249, pp. 429-431.
    doi: 10.1016/j.nimb.2006.04.045
  • Jeynes C, Peng N, Barradas NP, Gwilliam RM. (2006) 'Quality assurance in an implantation laboratory by high accuracy RBS'. ELSEVIER SCIENCE BV NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Seville, SPAIN: 249, pp. 482-485.
    doi: 10.1016/j.nimb.2006.03.171
  • Milosavljevic M, Lourenco MA, Shao G, Gwilliam RM, Homewood KP. (2006) 'Optimising dislocation-engineered silicon light-emitting diodes'. SPRINGER APPL PHYS B-LASERS O, 83 (2), pp. 289-294.
    doi: 10.1007/s00340-006-2149-6
  • Burr E, Pantouvaki M, Fice M, Gwilliam R, Krysa A, Roberts J, Seeds A. (2006) 'Signal stability in periodically amplified fiber transmission systems using multiple quantum well saturable absorbers for regeneration'. IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC J LIGHTWAVE TECHNOL, 24 (2), pp. 747-754.
    doi: 10.1109/JLT.2005.861924
  • Han SY, Hite J, Thaler GT, Frazier RM, Abernathy CR, Pearton SJ, Choi HK, Lee WO, Park YD, Zavada JM, Gwilliam R. (2006) 'Effect of Gd implantation on the structural and magnetic properties of GaN and AlN'. AMER INST PHYSICS APPL PHYS LETT, 88 (4) Article number 042102
    doi: 10.1063/1.2167790
  • Peaker AR, Markevich VP, Slotte J, Rummukainen M, Capan I, Pivac B, Gwilliam R, Jeynes C, Dobaczewski L. (2006) 'Understanding ion implantation defects in germanium'. ECS Transactions, 3 (2), pp. 67-76.
  • Pantouvaki M, Kong SF, Fice MJ, Seeds AJ, Gwilliam RM, Cannard P. (2006) '10 Gb/s noise suppression using an ion implanted waveguide saturable absorber'. Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006,
  • Pantouvaki M, Liu CP, Renaud CC, Cole S, Robertson M, Gwilliam R, Seeds AJ. (2006) 'Monolithically integrated QCSE-tuned InGaAsP MQW ridge waveguide DBR laser'. Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 2006, pp. 72-74.
  • Bennett NS, Smith AJ, Beer CS, O'Reilly L, Colombeau B, Dilliway GD, Harper R, McNally PJ, Gwilliam R, Cowern NEB, Sealy BJ. (2006) 'Enhanced antimony activation for ultra-shallow junctions in strained silicon'. Materials Research Society Symposium Proceedings, 912, pp. 59-64.
  • White N, Chen J, Mulcahy C, Biswas S, Gwilliam R. (2006) 'Chicane deceleration - An innovative energy contamination control technique in low energy ion implantation'. AIP Conference Proceedings, 866, pp. 335-339.
  • Smith AJ, Cowern NEB, Colombeau B, Gwilliam R, Sealy BJ, Collart EJH, Gennaro S, Giubertoni D, Bersani M, Barozzi M. (2006) 'Junction stability of B doped layers in SOI formed with optimized vacancy engineering implants'. AIP Conference Proceedings, 866, pp. 84-87.
  • Renaud CC, Pantouvaki M, Gregoire S, Lealman I, Cannard P, Gwilliam R, Seeds AJ. (2006) 'A monolithic MQW InP/InGaAsP-based comb generator'. 2006 International Topical Meeting on Microwave Photonics, MWP,
  • Bennett NS, O'Reilly L, Smith AJ, Gwilliam RM, McNally PJ, Cowern NEB, Sealy BJ. (2006) 'Strain-enhanced activation of Sb ultrashallow junctions'. AMER INST PHYSICS Ion Implantation Technology, Marseille, FRANCE: 866, pp. 54-57.
  • Gwilliam RM, Cowern NEB, Colombeau B, Sealy B, Smith AJ. (2006) 'Ultra-shallow junction formation in SOI using vacancy engineering'. AMER INST PHYSICS Physics of Ionized Gases, Natl Park Kopaonik, SERBIA: 876, pp. 181-190.
  • Smith AJ, Cowern NEB, Gwilliam R, Sealy BJ, Colombeau B, Collart EJH, Gennaro S, Giubertoni D, Bersani M, Barozzi M. (2006) 'Vacancy-engineering implants for high boron activation in silicon on insulator'. Applied Physics Letters, 88 (8)
    Full text is available at: http://epubs.surrey.ac.uk/227/
  • Bennett NS, Cowern NEB, Smith AJ, Gwilliam RM, Sealy BJ, O'Reilly L, McNally PJ, Cooke G, Kheyrandish H. (2006) 'Highly conductive Sb-doped layers in strained Si'. AMER INST PHYSICS APPL PHYS LETT, 89 (18) Article number 182122
    doi: 10.1063/1.2382741
    Full text is available at: http://epubs.surrey.ac.uk/126/
  • Sealy BJ, Smith AJ, Alzanki T, Bennett N, Li L, Jeynes C, Colombeau B, Collart EJH, Emerson NG, Gwilliam RM, Cowern NEB. (2006) 'Shallow junctions in silicon via low thermal budget processing'. Extended Abstracts of the Sixth International Workshop on Junction Technology, IWJT '06, , pp. 10-15.
  • Gennaro S, Giubertoni D, Bersani M, Foggiato J, Yoo WS, Gwilliam R, Anderle M. (2006) 'The effect of flash annealing on the electrical properties of indium/carbon Co-implants in silicon'. AIP Conference Proceedings, 866, pp. 113-116.
  • Milosavljevic M, Shao G, Lourenco MA, Gwilliam RM, Homewood KP, Edwards SP, Valizadeh R, Colligon JS. (2005) 'Transition from amorphous to crystalline beta phase in co-sputtered FeSi2 films as a function of temperature'. AMER INST PHYSICS J APPL PHYS, 98 (12) Article number 123506
    doi: 10.1063/1.2148629
    Full text is available at: http://epubs.surrey.ac.uk/464/
  • Homewood KP, Lourenco MA, Milosavljevic M, Shao G, Gwilliam RM. (2005) 'Dislocation engineered silicon for light emission'. IEEE 2005 IEEE LEOS Annual Meeting Conference Proceedings (LEOS), Sydney, AUSTRALIA: , pp. 608-609.
    Full text is available at: http://epubs.surrey.ac.uk/1752/

Conference papers

  • Loiacono R, Topley R, Nakyobe A, Mashanovich G, Gwilliam R, Lulli G, Feldesh R, Jones R, Reed G. (2011) 'Very low energy implanted Bragg gratings in SOI for wafer scale testing applications'. IEEE Proceedings of 8th IEEE International Conference on Group IV Photonics, London, UK: 8th IEEE GFP, pp. 51-53.
    doi: 10.1109/GROUP4.2011.6053712
  • Loiacono R, Reed GT, Mashanovich GZ, Gwilliam RM, Lulli G, Feldesh R, Jones R. (2011) 'Low energy silicon on insulator ion implanted gratings for optical wafer scale testing'. SPIE Proceedings of SPIE - The International Society for Optical Engineering, San Francisco, USA: Silicon Photonics VI 7943
    doi: 10.1117/12.873288
    Full text is available at: http://epubs.surrey.ac.uk/7822/
  • Lourenço MA, Wong L, Gwilliam RM, Homewood KP. (2010) 'Luminescence of Tm3+in dislocation engineered silicon substrates'. Proceedings of 7th IEEE International Conference on Group IV Photonics, Beijing, China: 7th IEEE GFP, pp. 159-161.
    doi: 10.1109/GROUP4.2010.5643395
  • Homewood KP, Lourenço MA, Gwilliam RM. (2010) '1.1 to 1.6 μm silicon light emitting diodes and optical gain'. Proceedings of IEEE 7th International Conference on Group IV Photonics GFP, Beijing, China: 7th IEEE GFP, pp. 302-304.
    doi: 10.1109/GROUP4.2010.5643347
  • Antwis L, Wong L, Smith A, Homewood K, Jeynes C, Gwilliam R. (2010) 'Optimization and characterisation of amorphous iron disilicide formed by ion beam mixing of Fe/Si multilayer structures for photovoltaic applications'. AIP Conference Proceedings, Kyoto, Japan: Ion Implantation Technology 2101: 18th International Conference on Ion Implantation Technology IIT 2010 1321, pp. 278-281.
    doi: 10.1063/1.3548379
  • Bailey MJ, Jeynes C, Sealy BJ, Webb RP, Gwilliam RM. (2010) 'On artefacts in the secondary ion mass spectrometry profiling of high fluence H+ implants in GaAs'. ELSEVIER SCIENCE BV NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Univ Cambridge, Cambridge, ENGLAND: 19th International Conference on Ion Beam Analysis 268 (11-12), pp. 2051-2055.
    doi: 10.1016/j.nimb.2010.02.033
  • Crowe IF, Hulko O, Knights AP, Hylton NP, Halsall MP, Ruffell S, Gwilliam RM. (2010) 'Formation of Si-nanocrystals in SiO2 via ion implantation and rapid thermal processing'. Proceedings of SPIE - The International Society for Optical Engineering, San Francisco, USA: Silicon Photonics V 7606
    doi: 10.1117/12.852924
  • Hylton NP, Crowe IF, Knights AP, Halsall MP, Ruffell S, Gwilliam RM. (2010) 'Optical spectroscopy of Er doped Si-nanocrystals on sapphire substrates fabricated by ion implantation into SiO2'. Proceedings of SPIE - The International Society for Optical Engineering, San Francisco, USA: Silicon Photonics V 7606
    doi: 10.1117/12.852922
  • Knights AP, Milgrarn JN, Wojcik J, Mascher P, Crowe I, Sherliker B, Halsall MP, Gwilliam RM. (2009) 'Observation of non-radiative de-excitation processes in silicon nanocrystals'. WILEY-V C H VERLAG GMBH PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, Edmonton, CANADA: 3rd International Conference on Optical, Optoelectronic and Photonic Materials and Applications 206 (5), pp. 969-972.
    doi: 10.1002/pssa.200881306
  • Vassilevski K, Nikitina I, Horsfall A, Wright N, O'Neill AG, Gwilliam R, Johnson CM. (2009) 'Silicon Carbide Static Induction Transistor with Implanted Buried Gate'. TRANS TECH PUBLICATIONS LTD SILICON CARBIDE AND RELATED MATERIALS 2008, Barcelona, SPAIN: 7th European Conference on Silicon Carbide and Related Materials 615-617, pp. 735-738.
  • Reed GT, Mashanovich G, Gardes FY, Gwilliam RM, Wright NM, Thomson DJ, Timotijevic BD, Litvinenko KL, Headley WR, Smith AJ, Knights AP, Jessop PE, Tarr NG, Deane JHB. (2009) 'Silicon photonics at the University of Surrey'. Proceedings of SPIE - The International Society for Optical Engineering, Dresden, Germany: Photonic Materials, Devices, and Applications III 7366, pp. 736602.1-736602.12.
    doi: 10.1117/12.823291
  • Bennett NS, Cowern NEB, Kheyrandish H, Paul S, Lerch W, Smith AJ, Gwilliam R, Sealy BJ. (2008) 'Vacancy engineering for highly activated 'diffusionless' boron doping in bulk silicon'. Proceedings of the 38th European Solid-State Device Research Conference, Edinburgh, UK: ESSDERC 2008, pp. 290-293.
    doi: 10.1109/ESSDERC.2008.4681755
  • Logan DF, Jessop PE, Knights AP, Gwilliam RM, Halsall MP. (2008) 'The effect of doping type and concentration on optical absorption via implantation induced defects in silicon-on-insulator waveguides'. Proceedings of Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, Sydney, Australia: COMMAD 2008, pp. 152-155.
    doi: 10.1109/COMMAD.2008.4802114
  • Seeds AJ, Pozzi F, Renaud CC, Fice MJ, Ponnampalam L, Rogers DC, Lealman IF, Gwilliam R. (2008) 'Microwave photonics: Opportunities for photonic integration'. Proceedings of the 14th European Conference on Integrated Optics and Technical Exhibition, Eindhoven, The Netherlands: ECIO'08, pp. 123-132.
  • Milosavljevic M, Lourenco MA, Shao G, Gwilliam RM, Homewood KP. (2008) 'Formation of dislocation loops in silicon by ion irradiation for silicon light emitting diodes'. ELSEVIER SCIENCE BV NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Florence, ITALY: 9th European Conference on Accelerators in Applied Research and Technology 266 (10), pp. 2470-2474.
    doi: 10.1016/j.nimb.2008.03.021
  • Wright NM, Thomson DJ, Litvinenko KL, Headley WR, Smith AJ, Knights AP, Gardes FY, Mashanovich GZ, Gwilliam R, Reed GT. (2008) 'Free carrier lifetime modification for silicon waveguide based devices'. IEEE Proceedings of 5th IEEE International Conference on Group IV Photonics, Cardiff, UK: 5th IEEE GFP, pp. 122-124.
    doi: 10.1109/GROUP4.2008.4638118
  • Kah M, Smith AJ, Hamilton JJ, Yeong SH, Columbeau B, Gwilliam R, Webb RP, Kirkby KJ. (2008) 'A Comparative Study of Interaction of End of Range (EOR) Defect Band with Upper Buried Oxide (BOX) Interface for B and BF2 Implants in SOI and Bulk Silicon with Pre-Amorphizing Implant'. AMER INST PHYSICS ION IMPLANTATION TECHNOLOGY 2008, Monterey, CA: 17th International Conference on Ion Implantation Technology 1066, pp. 51-54.
  • Smith AJ, Antwis LD, Yeong SH, Knights AP, Colombeau B, Sealy BJ, Gwilliam RM. (2008) 'Junction Leakage Analysis of Vacancy Engineered Ultra-Shallow p-type Layers'. AMER INST PHYSICS ION IMPLANTATION TECHNOLOGY 2008, Monterey, CA: 17th International Conference on Ion Implantation Technology 1066, pp. 22-25.
  • Smith AJ, Yeong SH, Colombeau B, Sealy BJ, Gwilliam RM. (2008) 'The Formation of Ultra-Shallow Phosphorous Doped Layers Using Vacancy Engineering'. AMER INST PHYSICS ION IMPLANTATION TECHNOLOGY 2008, Monterey, CA: 17th International Conference on Ion Implantation Technology 1066, pp. 38-41.
  • Peng N, Jeynes C, Gwilliam RM, Kirkby KJ, Webb RP. (2007) 'Depth profile analysis for MgB2 thin films, formed by B implantation in Mg ribbons using energetic ion backscatterings'. ELSEVIER SCIENCE BV PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS, Dresden, GERMANY: 8th International Conference on Materials and Mechanisms of Superconductivity and High Temperature Superconductors 460, pp. 600-601.
    doi: 10.1016/j.physc.2007.04.120
  • Lourenco MA, Milosavljevic M, Shao G, Gwilliam RM, Homewood KP. (2007) 'Dislocation engineered silicon light emitting devices'. ELSEVIER SCIENCE SA THIN SOLID FILMS, Kyoto, JAPAN: Asia-Pacific Conference on Semiconducting Silicides 515 (22), pp. 8113-8117.
    doi: 10.1016/j.tsf.2007.02.022
  • Mistry P, Gomez-Morilla I, Smith RC, Thomson D, Grime GW, Webb RP, Gwilliam R, Jeynes C, Cansell A, Merchant M, Kirkby KJ. (2007) 'Maskless proton beam writing in gallium arsenide'. ELSEVIER SCIENCE BV NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Singapore, SINGAPORE: 10th International Conference on Nuclear Microprobe Technology and Applications held in Conjunction with the 2nd International Workshop on Proton Beam Writing 260 (1), pp. 437-441.
    doi: 10.1016/j.nimb.2007.02.059
  • Ishibashi Y, Kobayashi T, Prins AD, Nakahara J, Lourenco MA, Gwilliam RM, Homewood KP. (2007) 'Excitation and pressure effects on photoluminescence from dislocation engineered silicon material'. WILEY-V C H VERLAG GMBH PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Barcelona, SPAIN: 12th International Conference on High Pressure Semiconductor Physics (HPSP-12) 244 (1), pp. 402-406.
    doi: 10.1002/pssb.200672525
  • Lourenco MA, Milosavljevic M, Shao G, Gwilliam RM, Homewood KP. (2006) 'Boron engineered dislocation loops for efficient room temperature silicon light emitting diodes'. ELSEVIER SCIENCE SA THIN SOLID FILMS, Singapore, SINGAPORE: 3rd International Conference on Materials for Advanced Technologies/9th International Conference on Advanced Materials 504 (1-2), pp. 36-40.
    doi: 10.1016/j.tsf.2005.09.036
  • Auret FD, Peaker AR, Markevich VP, Dobaczewski L, Gwilliam RM. (2006) 'High-resolution DLTS of vacancy-donor pairs in P-, As- and Sb-doped silicon'. ELSEVIER SCIENCE BV PHYSICA B-CONDENSED MATTER, Awaji Isl, JAPAN: 23rd International Conference on Defects in Semiconductors 376, pp. 73-76.
    doi: 10.1016/j.physb.2005.12.020
  • Gennaro S, Giubertoni D, Bersani M, Foggiato J, Yoo WS, Gwilliam R. (2006) 'Nonconventional flash annealing on shallow indium implants in silicon'. A V S AMER INST PHYSICS JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Daytona Beach, FL: 8th International Workshop on Fabrication, Characterization, and Modeling of Ultra-Shallow Doping Profiles in Semiconductors 24 (1), pp. 473-477.
    doi: 10.1116/1.2132321
  • Alzanki T, Gwilliam R, Emerson N, Smith A, Webb R, Sealy BJ. (2006) 'Electrical profiles of 20 nm junctions in Sb implanted silicon'. ELSEVIER SCIENCE BV NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Pacific Grove, CA: 14th International Conference on Ion Beam Modification of Materials (IBMM 2004) 242 (1-2), pp. 693-695.
    doi: 10.1016/j.nimb.2005.08.091
  • Mistry P, Gomez-Morilla I, Grime GW, Webb R, Jeynes C, Gwilliarn R, Cansell A, Merchant M, Kirkby KJ. (2006) 'Proton beam lithography at the University of Surrey's Ion Beam Centre'. ELSEVIER SCIENCE BV NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Pacific Grove, CA: 14th International Conference on Ion Beam Modification of Materials (IBMM 2004) 242 (1-2), pp. 387-389.
    doi: 10.1016/j.nimb.2005.08.128
  • Cowern NEB, Smith AJ, Colombeau B, Gwilliam R, Sealy BJ, Collart EJH. (2005) 'Understanding, modeling and optimizing vacancy engineering for stable highly boron-doped ultrashallow junctions'. IEEE IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2005, TECHNICAL DIGEST, Washington, DC: IEEE International Electron Devices Meeting, pp. 989-992.
    Full text is available at: http://epubs.surrey.ac.uk/1218/