It is designed to calculate the implantation range profiles of any ion in any target material. It uses a numerical solution to the Boltzmann Transport Equation to create an approximate solution and is based on the Projected Range ALgorithm (PRAL - J.P.Biersack, Nucl. Instrum. Meths, 182/183, 199, (1981)).

SUSPRE calculates the energy deposited by the ions based on a model suggested by Gibbons (J.F.Gibbons: Proc. IEEE, 60(6), 1062, (1972)),  Fritzsche (C.R.Fritzsche: Appl. Phys., 12, 347, (1977)) and Webb (R.P.Webb, I.H.Wilson: Proc. 2nd Int. Conf. Simulation of Semiconductor Devices and Processes, eds K.Board and D.R.J.Owen, Pineridge Press, Swansea, U.K., (1986)). 

Sputtering yields are then calculated from the energy deposited in the surface region of the material using the Sigmund formula (P.Sigmund, Phys. Rev., 184, 383, (1969))

A zip file containing the installation can be downloaded from here.

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SUSPRE screenshot (click to enlarge)