From IR, to Transistors, to Quantum Electronics
- When?
- Monday 6 June 2011, 16:00 to 17:00
- Where?
- 02ATI02
- Open to:
- Staff, Students, Public
- Speaker:
- Dr Phil Buckle, Cardiff University
Indium Antimonide has the narrowest bandgap of all the III-V semiconductors. Traditionally it has been used for IR applications both in imaging and for IR emitters and detectors.
Although the material presents many challenges in terms of handling and processing, the attractive properties of light electron mass, long ballistic length and large g factor (~ -50) make it an exciting material for future device applications, ranging from conventional high speed low power electronics through to more exotic quantum device concepts.
This talk will briefly review the use of this material at QinetiQ Malvern over the last few years for IR applications before expanding into more recent research and development of high speed low power InSb/AlInSb FETs, and how this work has evolved into future device applications in nanoelectronics and quantum information.
Seminar series : Advanced Technology Institute
