Silicon compatible III-V lasers for optical computing and optical interconnects
- Research Group
University of Marburg, Germany.
- Techniques used
High pressure and low temperature measurements will be used to:
- Determine the band structure and band offsets of GaAsPN/GaP using photocurrent and electroluminesce measurements on LEDs and lasers.
- Investigate the dominant carrier recombination processes in this material and the extent to which they limit device efficiency and maximum operating temperature.
- Determine the modulation properties of GaAsPN lasers.
The aim of this project is to investigate a new optoelectonic materials system that is directly compatible with silicon electronics. The eventual aim of the project is to produce lasers on silicon which are compatible with standard CMOS electronics technology and which will enable fast optical buses within computers. This would revolutionise computing by reducing power consumption and increasing data transmission rates.
In this project you will investigate GaAsPN-based lasers which may be grown directly on silicon. The project will focus on the carrier recombination processes which limit the efficiency of the lasers and their maximum operating temperature.