Biography

After completing his BSc and PhD degrees in his native Scotland (University of Edinburgh), Jeff Hosea spent a further two years there as a research fellow in the study of crystalline phase transitions in ferroelectrics using Raman and neutron scattering techniques.

He then ventured overseas to Australasia and ended up spending 11 years away in research, industrial and teaching positions. There his research activities included absorption spectroscopy of impurities and colour centres in insulators ; laser-materials interactions and automated laser-cutting devices ; and Brillouin/Raman scattering from both crystalline and amorphous/soft materials.

Research Interests

Jeff is primarily an experimental condensed matter physicist, with associated interests in the theoretical modelling and analysis of his measurements.

Currently, his main research activity is in the area of semiconductor photonic device structures. A particular emphasis is on developing advanced new spectroscopic methods of probing fundamental physical, optical and optoelectronic properties of such systems, while varying external factors such as electrical field, angle of incidence, temperature and pressure.

He has pioneered several of these new spectroscopic techniques at Surrey and leads an advanced optical characterisation laboratory operating over a wide and continuous wavelength range from the near ultra-violet to far infra-red (IR).

He has written over 170 journal and conference papers.

His Scopus h-index was recently 14.

Recent research topics include

• IR/visible vertical-cavity surface-emitting lasers (VCSELs) and Resonant-cavity Light-emitting Diodes (RCLEDs)
• Other photonic nanostructures such as Quantum Wells, Quantum Dots and Avalanche Photo-diodes
• Dilute-nitride materials (e.g. GaInNAs)
• Narrow-gap mid-IR materials (e.g. GaInSb quantum well lasers)
• Processing of Optoelectronic Materials
• Polymer and carbon nanotube-based systems, including novel light emitters

Research Achievements (examples)

• Invented completely novel modelling approaches which greatly simplify the interpretation of modulation spectra, an important technique in the study of semiconductor photonic nanostructures
• Discovered a new resonance effect in modulated reflectivity spectra of VCSELs and RCLEDs, which provides a very novel non-destructive method of determining which regions of as-grown wafers can yield working devices (i.e. where the “sweet spots” are), which can be done by no other means
• Invented a unique non-destructive and semiconductor epi-wafer characterisation technique
• Proposed and developed new FTIR-based spectroscopic methods of studying narrow-gap semiconductor heterostructures for applications in the mid-IR
• Acknowledged world-expert in advanced spectroscopy studies of photonic/optoelectronic systems
• Invited to give 7 papers at international conferences

Research Grants

Jeff has attracted over £2,500,000.00 of research funding from sources including the EPSRC, the EU, QinetiQ and other industrial organisations as both co and principal investigator.

Research Collaborations

Academic Research Collaborations

• Philips University (Marburg, Germany)
• Tampere University of Technology (Finland)
• Tyndall Institute (Ireland)
• UPM (Spain)
• State University of New York
• University of Texas at Dallas

Industrial/Commercial Research Collaborations

• QinetiQ (UK)
• Agilent (UK)
• IQE (UK)
• ORC (Finland)
• NMRC (Ireland)
• OMI (Ireland)
• Nexans (France)
• Thales (France)
• Infineon (Germany)
• Daido (Japan)

Publications

JOURNAL PAPERS while at Surrey (in reverse chronological order) 

[For Conferences - see after journals]

102 “Room temperature spectroscopic characterisation of mid-infrared GaInSb quantum well laser structures”, NE Fox, AD Andreev, GR Nash, T Ashley & TJC Hosea, Semiconductor Science & Technology 25, 35005-1 – 35005-4 (2010)

101 “Colloid-Assisted Self-Assembly of Robust, Three-Dimensional Networks of Carbon Nanotubes Over Large Areas”, I Jurewicz, AAK King, P Worajittiphon, P Asanithi, EW Brunner, RP Sear, TJC Hosea, JL Keddie and AB Dalton, Macromolecular Rapid Communications, 31, (2010).

100 “Fourier Transform Infrared Surface Photovoltage Spectroscopy for the investigation of mid-infrared semiconductor lasers”, TK Sharma, NE Fox and TJC Hosea, Physica Status Solidi (a) 206, No. 5, 808–815 (2009).

99 “A method of obtaining simultaneous complementary spectroscopic information on self-assembled quantum dots” TK Sharma and TJC Hosea, Japanese Journal of Applied Physics, 48, 082301-1 – 082301-4 (2009).

98 “Room temperature characterisation of InGaAlAs quantum well laser structures using electro-modulated reflectance and surface photovoltage spectroscopy” NE Fox, TK Sharma, S Sweeney, and TJC Hosea, Physica Status Solidi (a) 206, No. 5, 796–802 (2009).

97 “Electro-reflectance lineshapes in multilayered semiconductor structures : influence of the linear electro-optic effect”, J Bhattacharyya, S Ghosh, BM Arora and TJC Hosea, Physical Review B, 78, 195312-1 to 195312-5 (2008).

96 “An accurate determination of the electronic transitions of InAs/InGaAs/InP quantum dots for mid-IR lasers using simultaneous complementary spectroscopic techniques”, TK Sharma, TJC Hosea, S Sweeney, and X Tang, Journal of Applied Physics, 104, 083109-1 to 083109-8 (2008).

95 “Room Temperature Observation of the Energy Levels of Mid-Infrared Quantum Well Lasers using Fourier Transform Infrared-Surface Photovoltage Spectroscopy”, TK Sharma, NE Fox, TJC Hosea, GR Nash, SD Coomber, L Buckle, MT Emeny, and T Ashley, Applied Physics Express 1 No. 6, 062001-1 to 062001-3, (2008).

94 “Determination of the fundamental and spin-orbit-splitting band gap energies of InAsSb-based ternary and pentenary alloys using mid-infrared photoreflectance.” S. A. Cripps and T. J. C. Hosea, A. Krier, V. Smirnov, P.J. Batty, Q.D. Zhuang ,H. H. Lin, Po-Wei Liu and G. Tsai, Thin Solid Films 516 8049–8058 (2008).

93 ” Photoluminescence of InNAs alloys: S-shaped temperature dependence and conduction band non-parabolicity” M Merrick, SA Cripps, BN Murdin, and TJC Hosea, TD Veal and CF McConville, M. Hopkinson Physical Review B 76 075209-1 to 075209-9 (2007).

92 “Mid-infrared photoreflectance study of InAs-rich InAsSb and GaInAsPSb, indicating negligible bowing for the spin-orbit splitting energy”, SA Cripps, TJC Hosea, A Krier, V Smirnov, PJ Batty, QD Zhuang, HH Lin, P-Wei Liu and G Tsai, Applied Physics Letters, 90, 172106-1 to 172106-3 (2007).

91 “Microscopic Electro-absorption Lineshape Analysis For Ga(AsSb)/GaAs Heterostructures”, C Bückers, G Blume, A Thränhardt, C Schlichenmaier, PJ Klar, G Weiser, SW Koch, J Hader, JV Moloney, TJC Hosea, SJ Sweeney, J­B Wang, SR Johnson, and Y­H Zhang, Journal of Applied Physics, 101, 033118-1 to 033118-8 (2007).

90 “An Enhanced Model for the Modulated Reflectance Spectra of Vertical-Cavity Surface-Emitting Laser Structures”, SA Cripps and TJC Hosea, Physica Status Solidi (a), 204 (2) , 331-342 (2007).

89 “Analysis of Reflectance and Modulation Spectroscopic Lineshapes in Optoelectronic Device Structures”, TJC Hosea, SA Cripps, TE Sale and K Hild, Applied Surface Science, 253 70–79 (2006).

88 “Photoluminescence spectroscopy of band gap reduction in dilute InNAs alloys”, TD Veal, LFJ Piper, PH Jefferson, I Mahboob & CF McConville, M Merrick, TJC Hosea, and BN Murdin, M Hopkinson, Applied Physics Letters, 87, 182114-1 - 182114-3 (2005).

87 “Characterization of a 760 nm vertical-cavity surface-emitting laser structure by reflectance and photomodulated reflectance” S.A. Cripps and T.J.C. Hosea, Physica Status Solidi (a) 202, 1217-1226 (2005).

86 “Bandgap bowing in InSb(1-x)N(x) investigated with a new Fourier Transform modulated spectroscopy technique for the mid-infrared”, M Merrick, TJC Hosea, BN Murdin, T Ashley and L Buckle, Physics of Semiconductors, 772, 295-296, American Institute of Physics Conf. Proc., 2005).

85 “Characterization of vertical-cavity surface-emitting laser structures by modulation spectroscopy: A status report”, PJ Klar, C Karcher, B Metzgerand and TJC Hosea, Physica Status Solidi (a) 202, 1208-1216 (2005).

84 “A study of the low-energy interference oscillations in photoreflectance of GaAsSb/GaAs quantum well structures”, G. Blume, T.J.C. Hosea and S. J. Sweeney, Physica Status Solidi (a) 202, 1244-1254 (2005).

83 “A new Fourier transform photo-modulation spectroscopic technique for narrow band-gap materials in the mid- to far-infrared”, TJC Hosea, M. Merrick and B.N. Murdin, Physica Status Solidi (a) 202, 1233-1243 (2005).

82 “Spectroscopic investigations of GaAsSb/GaAs based structures for 1.3um VCSEL applications”, G Blume, TJC Hosea, SJ Sweeney, SR Johnson, J-B Wang, Y-H Zhang, IEE Proceedings: Optoelectronics, 152, 110-117 (2005).

81 “High temperature operation of 760nm vertical-cavity surface-emitting lasers investigated using photomodulated reflectance wafer measurements and temperature-dependent device studies” SA Cripps, TJC Hosea, SJ Sweeney, D Lock, T Leinonen, J Lyytikainen, and M Dumitrescu, IEE Proceedings: Optoelectronics, 152, 103-109 (2005).
80 “AlGaInN resonant-cavity LED devices studied by electro-modulated reflectance and carrier lifetime techniques”, G Blume, TJC Hosea, SJ Sweeney, P de Mierry and D Lancefield, IEE Proceedings: Optoelectronics, 152, 118-124 (2005).

79 “Advances in the spectroscopic characterisation of vertical-cavity optoelectronic devices and structures using modulated reflectance”, TJC Hosea, Materials, Active Devices & Optical Amplifiers, 5280, 516-527 (Eds: CJ Chang-Hasnain, D Huang, Y Nakano, X Ren, SPIE May 2004 )

78 “Characterisation of VCSEL and RCLED structures using modulation spectroscopy”, TJC Hosea, Physica Scripta T, 114 , 227-230, (2004).

77 “Advances in the application of modulation spectroscopy to vertical cavity structures”, TJC Hosea, Thin Solid Films, 450, 3-13, (2004).

76 "Reflectivity fitting for accurate thickness and compositional determination in RCLEDs," TE Sale, K Hild, TJC Hosea, M Hirotani and Y Kato, Light-Emitting Diodes: Research, Manufacturing and Applications VIII, 5366, 191-199 (eds. SA Stockman, HW Yao, EF Schubert, SPIE, Bellingham, WA, 2004).

75 “Theoretical and Experimental Analysis of 1.3µm InGaAsN/GaAs Lasers”, S Tomic, EP O’Reilly, R Fehse, SJ Sweeney, AR Adams, AD Andreev, SA. Choulis, TJC. Hosea, and H Riechert, IEEE Journal of Selected Topics in Quantum Electronics, 9, 1228-1238 (Sept/Oct 2003).

74 “Post-growth non-destructive characterisation of dilute-nitride VCSELs using electroreflectance spectroscopy”, S. A. Choulis, T. J. C. Hosea , S.Ghosh, P.J. Klar, and M. Hofmann, Photonics Technology Letters, 15, 1026-1028 (2003).

73 “Spectroscopic characterisation of 1450 nm semiconductor pump laser structures for Raman amplifiers” , S.B. Constant, S. Tomic, D. Lock, T.E. Sale, S. J. Sweeney, and T.J.C. Hosea, Journal of Applied Physics, 93, 9446-9455, (2003).

72 “Pressure and k.p studies of band parameters in dilute-N GaInNAs/GaAs Quantum Wells” S.A. Choulis, T.J.C. Hosea, S. Tomic, M. Kamal-Saadi,A.R. Adams, E.P. O’Reilly, B.A.Weinstein and P. J. Klar, Physica Status Solidi (b), 235, No. 2, 384 –389 (2003).

71 “Determining the band-structure of an InGaNAs/GaAs semiconductor laser structure using non-destructive photomodulated reflectance measurements and k•p studies”. S. A. Choulis, S. Tomic, EP O’Reilly and T. J. C. Hosea, Solid State Communications, 125, 155-159 (2003).

70 “Electronic structure of InyGa1-yAs1-xNx/GaAs multiple quantum wells in the dilute-N regime from pressure and k•p studies”, S.A. Choulis, T.J.C. Hosea, S. Tomic, M. Kamal-Saadi, A. R. Adams, EP O’Reilly, BA Weinstein & PJ Klar, Physical Review B 66, 165321-1- 165321-9 (2002)

69 “Interband transitions of quantum wells and device structures containing Ga(N,As) and (Ga,In)(N,As)”, P.J. Klar,, H. Grüning, W. Heimbrodt, G. Weiser, J. Koch, K. Volz, W. Stolz, S.W. Koch, S. Tomic, S.A. Choulis, T.J.C. Hosea, E.P. O'Reilly, M. Hofmann, J. Hader and J.V. Moloney, Semiconductor Science & Technology, (Topical Issue on III-N-V Semiconductor Alloys) 17, 830-842 (2002).

68 “Accurate methods for study of light emission from quantum wells confined in a microcavity”, S.B. Constant, T.J.C. Hosea, L. Toikkanen, I. Hirvonen, and M. Pessa, Journal of Quantum Electronics, 38, No. 8 1031-1038 (August 2002).

67 “Spectral and thermal properties of red AlGaInP RCLEDs for polymer optical fibre applications” K. Hild , T.E. Sale , T.J.C. Hosea , M. Hirotani, Y. Mizuno and T.Kato, IEE Proceedings: Optoelectronics, 148, No. 6, 220-224 (2001).

66 “Influence of varying N-environments on the properties of (GaIn)(NAs) vertical-cavity surface-emitting lasers” S.A. Choulis, T.J.C Hosea, P.J. Klar, M. Hofmann and W. Stolz, Applied Physics Letters, 79, 4277-4279 (2001).

65 “Influence of Quantum Well and Cavity Features on the Spectral, Angle- and Temperature-Dependent Emission of 650nm Resonant Cavity LEDs” K. Hild , T.E. Sale , T.J.C. Hosea , M. Hirotani, Y. Mizuno and T.Kato, Physica Status Solidi (a), 188, No. 3, 937-941 (2001).

64 “Photoreflectance lineshape symmetry and quantum-well ground-state exciton energy in vertical-cavity surface-emitting lasers” by S. Ghosh, S.B. Constant and T.J.C. Hosea, Applied Physics Letters. ,78, 3250-3252 ( 2001)

63 “Non-destructive Spectroscopic Characterisation of Visible Resonant Cavity Light Emitting Diode Structures”, S. B. Constant, S. Ghosh, T.E. Sale and T.J.C. Hosea, IEE Proceedings: Optoelectronics, 148, No. 1, 69-73 (2001).

62 “Effects of confinement on the coupling between nitrogen and band states in InGaAs1 xNx/GaAs (x <= 0.025) structures: pressure and temperature studies” by S. A. Choulis, B. A. Weinstein, T. J.C. Hosea, M. Kamal-Saadi, E. P. O’Reilly, A. R. Adams, and W. Stolz, Physica Status Solidi (b), 223 151-156 (2001).

61 “Growth characterisation of InxGa1-xAs/GaAs/AlAs vertical-cavity surface-emitting laser structure using photomodulated reflectance.” Stelios A. Choulis and Thomas J.C. Hosea , IEE Proceedings: Optoelectronics, 148, No. 1, 49-53 (2001).

60 “Monitoring Thickness Changes in GaAs/AlAs Partial VCSEL Bragg Reflector Stacks using Optical Spectroscopic, X-ray and Electron Microscopic Methods”, P. J. S. Thomas, T. J. C. Hosea, D. Lancefield, and H. Meidia, Semiconductor Science & Technology 16, 107-117 (2001).

59 “Resonances between the cavity mode and five excitonic transitions in an InxGa1 xAs/GaAs/AlAs/AlGaAs vertical-cavity surface-emitting laser structure using photomodulated reflectance” by Stelios A. Choulis, Sandip Ghosh and Thomas J. C. Hosea, Journal of Applied Physics, 88 5547-5553 (2000).

58 “Edge emission electroluminescence study of as-grown VCSEL structures”, S Ghosh, S Constant, TJC Hosea and TE Sale, Journal of Applied Physics , 88, 1432-1438 (2000).

57 “Photo-modulated reflectance as a valuable non-destructive process tool for VCSELs”, TJC Hosea, TE Sale, and PJS Thomas, Photonics Tech. Letters, 12, 1328-1330 (2000).

56 “Non-destructive electroluminescence characterisation of as-grown semiconductor optoelectronic device structures using indium-tin-oxide coated electrodes”, S Ghosh and TJC Hosea, Review of Scientific Instruments, 71, 1911-1912 (2000).

55 "Photomodulated reflectance study of InGaAs/GaAs/AlAs VCSEL structures: Monitoring higher-order quantum well transitions", PJ Klar, G Rowland, PJS Thomas, A Onischenko, TE Sale, and TJC Hosea. Physical Review B, 59, 2902-2909 (1999).

54 "Photomodulated reflectance study of InGaAs/GaAs/AlAs VCSEL structures in the weak coupling regime : The cavity/ground-state-exciton resonance", PJ Klar, G Rowland, PJS Thomas, A Onischenko, TE Sale, and TJC Hosea. Physical Review B, 59, 2894-2901 (1999)

53 “Quantum-well and cavity-mode resonance effects in a vertical-cavity surface-emitting laser structure, observed by photoreflectance using hydrostatic pressure and temperature tuning”, PMA Vicente, PJS Thomas, D Lancefield, TE Sale, TJC Hosea, AR Adams, PJ Klar and A Raymond, Phys. Stat. Sol. (b) , 211, 255-262 (1999).

52 "Optische Untersuchengen der Kavitatsmoden-Exzitonen-Resonanz in VCSEL Strukturen", PJ Klar, G Rowland, PJS Thomas und TJC Hosea, Verhandlung der Deutschen Physikalischen Gesellschaft, 33, 698 (1998)

51 "Reflectance and Photomodulated Reflectance Studies of an InGaAs/GaAs/AlGaAs Vertical-cavity Surface-emitting Laser Structure Under Hydrostatic Pressure", PJ Klar, PMA Vicente, TE Sale, TJC Hosea, AR Adams, and A Raymond, Solid State Communications 107, 97-100 (1998).

50 "A Photomodulated reflectance study of InAs/GaAs Self-assembled Quantum Dots", GL Rowland, TJC Hosea, S Malik, D Childs and R Murray. Appl. Phys. Lett, 73, 3268-3270 (1998).

49 "Reflectance and Photomodulated Reflectance Studies of Cavity Mode and Excitonic Transitions in an InGaAs/GaAs/AlAs/AlGaAs VCSEL Structure", PJ Klar, G Rowland, TE Sale, and TJC Hosea. Phys. Stat. Sol. (a)¸ 170, 145-148 (1998).

48 "Modelling and Analysis of Photo-modulated reflectance and DCXRD Measurements of Tensilely Strained InGaAs/InGaAsP Quantum Well Structures", G Rowland and TJC Hosea, Journal of Applied Physics 83, 4909-4917 (1998).

47 "Analysis of Strained InGaAs/InGaAsP Single Quantum Wells using Room Temperature Photoreflectance", DJ Hall, TJC Hosea and CC Button, Semiconductor Science & Technology, 13, 302-309 (1998).

46 "Real-time Photo-spectroscopic Ellipsometry Measurement of Electric Fields and Composition in Semiconductors", RT Carline, J Russell, TJC Hosea, PJS Thomas and C Pickering, Thin Solid Films, 313, 579-582 (1998).

45 "Photo-modulated Reflectance of Tensilely-Strained InGaAs/InGaAsP Quantum Well Structures", TJC Hosea and G Rowland, Semiconductor Science & Technology, 13, 207-213 (1998).

44 "Airy Function Analysis of Franz-Keldysh Oscillations in the Photoreflectance Spectra of In1-xGaxAsyP1-y Layers", DJ Hall, TJC Hosea and D Lancefield, Journal of Applied Physics, 82(6), 3092-3099, (1997).

43 "Detailed Analysis of Room Temperature Photoreflectance of Strained InxGa1-xAs/AlyGa1-yAs Undoped Single Quantum Wells", TJC Hosea, D Lancefield and NS Garawal, Journal of Applied Physics 79, 4338-4347 (1996).

42 "An Analysis of Phase Shifts in Photoreflectance Spectra of Strained Si/Si1-xGex Structures for x<0.24", TJC Hosea, RT Carline and DJ Hall, Journal of Applied Physics 78, 5084-5089 (1995).

41 "Photoreflectance of Single Buried Si1-xGex Epilayers (0.12<x<0.25)", RT Carline, TJC Hosea and DJ Hall, Journal of Applied Physics 78, 4285- 4287 (1995).

40 "Modelling and Analysis of Photoreflectance Spectra of GaAs/AlGaAs Single Quantum Well Structures", PJ Hughes, TJC Hosea and BL Wiess, Semiconductor Science and Technology, 10, 1339-1347 (1995)

39 "Estimating Critical-Point Parameters of Modulated Reflectance Spectra", TJC Hosea, Physica Status Solidi (b) 189, 531-542 (1995).

38 "Analysis of Franz-Keldysh Oscillations in Photoreflectance Spectra of a GaAs/AlGaAs Quantum Well Structure", PJ Hughes, BL Wiess and TJC Hosea, Journal of Applied Physics 77, 6472-6480 (1995).

37 "Analysis of Phase Shifts due to Etching in Photoreflectance Spectra of a GaAs/AlGaAs Single Quantum Well", TJC Hosea, PJ Hughes, and BL Wiess, Journal of Applied Physics 77, 2672-2678 (1995).

36 "Photoreflectance Spectroscopy of Pseudomorphic Si1-xGex(100) Structures”, RT Carline, C Pickering, TJC Hosea and DJ Hall, Materials Science and Technology 11, 416-421 (1995).

35 "Photoreflectance of Strained Si1-xGex Epilayers (0.07<=x<=0.26) and Comparison with Spectroscopic Ellipsometry", RT Carline, C Pickering, TJC Hosea and DJ Robinson, Applied Surface Science, 81, 475-483, (1994).

34 "Estimating Critical-Point Parameters from Kramers-Kronig Transformations of Modulated Reflectance Spectra", TJC Hosea, Phys. Stat. Solidi (b) 182, K43-K47 (1994).

33 "Improved Three-point and Four-point Methods of Analysing Modulated Reflectance Spectra", TJC Hosea, Phys. Stat. Solidi (b) 178, K47-K52 (1993).

32 "Raman Scattering from Soft Modes in Barium-Doped Lead Germanate", TJC Hosea, Journal of Raman Spectroscopy, 21, 717-724 (1990).

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International Refereed Conferences while at Surrey (in reverse chronological order)

69. “Complementary spectroscopic investigations on highly strained InGaAs/GaAs quantum wells and InAs/InGaAs/InP quantum dots” TK Sharma, NE Fox and TJC Hosea, , International Workshop on Modulation Spectroscopy of Semiconductor Structures, Wroclaw, Poland (3rd – 5th July, 2008).

68 “Electro-modulated Reflectance and Surface Photo-voltage Spectroscopy of novel InGaAlAs Quantum Well Structures” NE Fox and TJC Hosea, International Workshop on Modulation Spectroscopy of Semiconductor Structures, Wroclaw, Poland (3rd – 5th July, 2008).

67 Invited Paper : “Photoreflectance in the mid-infrared : a study of the bandgaps and spin-orbit splittings of ternary and pentenary InAsSb-based alloys” TJC Hosea, SA Cripps, A Krier, V Smirnov, PJ Batty QD Zhuang, HH Lin, PW Liu and G Tsai, European Materials Research Society E-MRS Symposium, Warsaw, Poland (Sep 17- Sep 21, 2007).

66 Invited Paper  : “Understanding the modulation spectra of micro-cavity and related device structures” TJC Hosea, International Workshop on Modulation Spectroscopy of Semiconductor Structures, Wroclaw, Poland (29th June – 1st July, 2006).

65 “Mid-infrared photomodulation spectroscopy of narrow-gap semiconductors”, SA Cripps, M Merrick & TJC Hosea, at Condensed Matter & Material Physics Conf., CMMP 2006, University of Exeter, Exeter, U.K. (20 - 21 April 2006).

64 “Mid-infrared dilute nitrides: optical properties of InNAs and GaNSb”, TD Veal, PH Jefferson, LFJ Piper, CF McConville, M Merrick, TJC Hosea, BN Murdin, L Buckle, T Ashley, BR Bennett, & M Hopkinson, at Condensed Matter and Material Physics Conference CMMP 2006, University of Exeter, Exeter, U.K. (20 - 21 April 2006).

63 Invited Paper  : “Modulated reflectance and reflectance characterisation of optoelectronic device structures”, TJC Hosea, European Materials Research Society E-MRS Symposium, Strasbourg, France (May 31- June 3rd, 2005)

62 “Photo-modulation studies of GaAsSb/GaAs structures : Experimental investigations and modelling of interference oscillations”, G Blume, TJC Hosea, S Cripps, SJ Sweeney Y-H Zhang and SR Johnson, Semiconductor and Integrated Optoelectronics Conference, SIOE 2005, Cardiff, Wales, UK (21st -23rd March 2005).

61 “Temperature and pressure studies of indirect carrier leakage in 760 nm edge-emitting lasers designed for oxygen sensing”, Stuart Cripps, SJ Sweeney, and TJC Hosea Semiconductor and Integrated Optoelectronics Conference, SIOE 2005, Cardiff, Wales, UK (21st -23rd March 2005).

60 “GaAsSb/GaAs based structures for 1.3um VCSEL applications: a spectroscopic study”, G Blume, TJC Hosea, SJ Sweeney, SR Johnson and Y-H Zhang, Quantum Electronics & Photonics, QEP-16, Glasgow, Scotland (6th - 9th Sept. 2004).

59 “Bandgap bowing in InSb(1-x)N(x) investigated with a new Fourier Transform modulated spectroscopy technique for the mid-infrared”, M Merrick, TJC Hosea, BN Murdin, T Ashley and L Buckle, 27th International Conference on the Physics of Semiconductors, Flagstaff, Arizona, (26th-20th July, 2004)

58 “Experimental Characterisation of AlGaInN Resonant Cavity Light Emitting Diode Structures for Plastic Optical Fibre Applications”, G Blume, TJC Hosea and SJ Sweeney, P de Mierry & D Lancefield, Quantum Electronics & Photonics, QEP-16, Glasgow, Scotland (6th - 9th Sept. 2004).

57 Invited Paper  : “Photo-modulation spectroscopy in the mid- to far-infrared for narrow band-gap materials”, TJC Hosea, International Workshop on Modulation Spectroscopy of Semiconductor Structures, Wroclaw, Poland (1st – 3rd July, 2004)

56 “Avoiding low-energy interference oscillations in photo-modulated reflectivity studies of GaAsSb/GaAs QW material for 1.3um VCSEL applications”, G. Blume and TJC Hosea, International Workshop on Modulation Spectroscopy of Semiconductor Structures, Wroclaw, Poland (1st – 3rd July, 2004)

55 “Photo-modulated reflectance studies of a high temperature 760nm vertical-cavity surface-emitting laser”, S Cripps and TJC Hosea, International Workshop on Modulation Spectroscopy of Semiconductor Structures, Wroclaw, Poland (1st – 3rd July, 2004)

54 Invited Paper  : “Origin of the Low-Energy Interference Oscillations (LEIO) sometimes seen in Modulated Reflectance”, TJC Hosea, International Workshop on Modulation Spectroscopy of Semiconductor Structures, Wroclaw, Poland (1st – 3rd July, 2004)

53 “High temperature operation of 760nm VCSELs investigated using photo-modulated reflectance wafer measurements and temperature dependent device studies.”, Stuart Cripps, TJC Hosea, SJ Sweeney, Tomi Leinonen, Jari Lyytikainen, and M. Dumitrescu, Semiconductor and Integrated Optoelectronics Conference, SIOE 2004, Cardiff, Wales, UK (5th - 7th April 2004).

52 “Spectroscopic investigations of GaAsSb/GaAs based structures for 1.3 um VCSEL applications.”, G Blume, TJC Hosea, SJ Sweeney, P Dowd and SR Johnson, Semiconductor and Integrated Optoelectronics Conference, SIOE 2004, Cardiff, Wales, UK (5th - 7th April 2004).

51 “AlGaInN resonant-cavity LED devices studied by electro-modulated reflectance and carrier lifetime techniques.”, G Blume, TJC Hosea, SJ Sweeney,P de Mierry and D Lancefield, Semiconductor and Integrated Optoelectronics Conference, SIOE 2004, Cardiff, Wales, UK (5th - 7th April 2004).

50 ”Reflectivity fitting for accurate thickness and compositional determination in RCLEDs”, TE Sale, K Hild, M Hirotani and TJC Hosea, SPIE Photonics West : Light Emitting Diodes (San Jose, 24th-29th Jan, 2004).

49 Invited Paper  : “Advances in the spectroscopic characterisation of vertical-cavity optoelectronic devices and structures using modulated reflectance”, TJC Hosea, SPIE Asia-Pacific Optical and Wireless Communications (Wuhan, China, 2nd-6th November, 2003)

48 “Determination of the piezo-electric field in 2.5nm quantum wells of a resonant cavity AlGaInN LED, using electro-modulated reflectivity measurements”, G. Blume, TJC Hosea, Institute of Physics Conference : Expanding the Frontiers of Nano-Vacuum Technology (London, 15th Sept. 2003).

47 “Characterisation of VCSEL and RCLED structures using modulation spectroscopy”, TJC Hosea, 20th Nordic Semiconductor Meeting NSM03, Tampere, Finland (August 25-27, 2003).

46 Invited Paper  : “Advances in the application of modulation spectroscopy to vertical cavity structures”, TJC Hosea, European Materials Research Society E-MRS Symposium, Strasbourg, France (June 10-13th, 2003).

45 “Experimental and Theoretical Analysis of the Recombination Processes in GaInNAs 1.3um Lasers”, S Tomic, R Fehse, SA Choulis, EP O’Reilly, AR Adams, SJ Sweeney, AD Andreev, TJC Hosea & H Riechert, 18th IEEE International Semiconductor Laser Conference Kongresshaus, Garmisch-Partenkirchen, Garmisch, Germany (9 Sept-3 Oct. 2002).

44 “Pressure and k.p studies of band parameters in dilute-N GaInNAs/GaAs Quantum Wells” SA Choulis, TJC Hosea, S Tomic, M Kamal-Saadi, AR Adams, EP O’Reilly, BA Weinstein and PJ Klar, Tenth International Conference on High Pressure Semiconductor Physics, HPSP10, University of Surrey, Guildford, UK (5th-8th Aug., 2002).

43 “Photo-modulated reflectance methods for study of light emission from quantum wells confined in a vertical microcavity surface Emitting structure” SB Constant, TJC Hosea, L Toikkanen, I Hirvonen, M Pessa IQEC 2002 International Quantum Electronics Conference, Moscow, Russia (22nd-28th June, 2002).

42 “1450nm Edge-Emitting Laser Structures studied by Electro-modulated reflectance and Spontaneous Emission Spectroscopy” SB Constant, TJC Hosea, D Lock, SJ Sweeney and TE Sale, IQEC 2002 International Quantum Electronics Conference, Moscow, Russia (22nd-28th June, 2002).

41 “Effect of de-tuning on the temperature dependence of 650nm resonant cavity LEDs”, K Hild, TE Sale, TJC Hosea, M Hirotani, Y Mizuno and T Kato, IQEC 2002 International Quantum Electronics Conference, Moscow, Russia, (22nd-28th June, 2002).

40 “Electro-modulated Reflectance Studies on 1450nm Edge Emitter Semiconductor Laser Structures” Stephanie B Constant, Jeff Hosea, Daren Lock, Terry E Sale, Stephen J Sweeney and S Tomic Semiconductor and Integrated Optoelectronics Conference, SIOE 2002, Cardiff, Wales, UK (25th-27th March, 2002).

39 “Influence of the top DBR reflectivity, quantum well-cavity de-tuning and aperture size on the current and temperature dependence of red RCLEDs” Konstanze Hild, Terry Sale, Jeff Hosea, Masumi Hirotani, Yoshiyuki Mizunoand Toshihiro Kato, Semiconductor and Integrated Optoelectronics Conference, SIOE 2002, Cardiff, Wales, UK (25th-27th March, 2002).

38 “Integrated optical and electronic modelling of oxide-confined visible VCSELs” X Li, TE Sale, G Knowles and TJC Hosea, Photonics West 2002, Optoelectronics (Vertical-Cavity Surface-Emitting Lasers VI), San Jose, CA, USA (22-24 Jan. 2002).

37 "Modelling of oxide-confined visible emitting VCSELs", X Li, T Sale, G Knowles and TJC Hosea, 15th Quantum Electronics and Photonics Conference,Glasgow, Scotland, (3-6 September 2001).

36 “Temperature dependence and spectral properties of resonant cavity LEDs that emit at 650nm” K Hild, TE Sale, TJC Hosea, M Hirotani, Y Mizuno and T Kato, International Workshop on Microcavity Light Sources, University of Paderborn, Paderborn, Germany, (7th April 2001).

35 “Determining the quantum well ground state exciton energy in vertical-cavity laser and LED structures using the symmetry of photoreflectance lineshapes” Sandip Ghosh, Thomas JC Hosea and Stephanie B Constant, , Semiconductor and Integrated Optoelectronics Conference, SIOE 2001, Cardiff, Wales, UK (17th-19th April, 2001).

34 “Spectral and thermal properties of red AlGaInP RCLEDs for polymer fibre applications”, K Hild, TE Sale, TJC Hosea, M Hirotani, Y Mizuno and T Kato, Semiconductor and Integrated Optoelectronics Conference, SIOE 2001, Cardiff, Wales, UK (17th-19th April, 2001).

33 “Effects of dilute nitrogen-alloying on the pressure dependence of interband transitions in InGaAsN/GaAs confinement structures”, B. A. Weinstein, S. A. Choulis, T. J. C. Hosea, M. Kamal-Saadi, E. P. O'Reilly, A. R. Adams and W. Stolz at American Physical Society meeting, APS, Seattle, Washington, USA (12-16 March, 2001).

32 “High-pressure and low-temperature photoreflectance studies of coupling between nitrogen and band states in dilute InGaAs1-xNx/GaAs MQW structures”, SA Choulis, BA Weinstein, TJC Hosea, M Kamal-Saadi, EP O’Reilly, AR Adams, and W Stolz at Condensed Matter and Material Physics Conference CMMP 2000, University of Bristol, Bristol, U.K. (19-21 Dec. 2000).

31 “Characterisation of visible (~650nm) RCLED wafers and device performance”, K Hild, TJC Hosea, TE Sale, M Hirotani, Y Miyuno, and T Kato, at Condensed Matter and Material Physics Conference CMMP 2000, University of Bristol, Bristol, U.K. (19-21 Dec. 2000).

30 “Effects of confinement on the coupling between nitrogen and band states in InGaAs1 xNx/GaAs (x <= 0.025) structures: pressure and temperature studies” by SA Choulis, BA Weinstein, TJC Hosea, M Kamal-Saadi, EP O’Reilly, AR Adams, and W Stolz, Ninth International Conference on High Pressure Semiconductor Physics, HPSP9, Hokkaido University, Sapporo, Japan (24th-28th Sept., 2000).

29 “Non-destructive Photo-modulated Reflectance Assessment of Vertical Cavity LED and Laser Structures” Stephanie B Constant and Thomas JC Hosea, EPSRC Photonics 2000 meeting, University of Manchester Institute of Science and Technology (UMIST), UK (5th Jul., 2000)

28 “Photomodulated reflectance study of InGaAs/GaAs/AlAs vertical-cavity surface-emitting laser structure as a function of temperature”, S Choulis, S Ghosh, & TJC Hosea, Semiconductor and Integrated Optoelectronics Conference, SIOE 2000, Cardiff, Wales, UK (17th-19th April, 2000).

27 “Non-destructive Characterisation of Resonant Cavity Light Emitting Diode Structures Using Photo-modulated Reflectance”, SB Constant, S Ghosh, TE Sale and TJC Hosea, Semiconductor and Integrated Optoelectronics Conference, SIOE 2000, Cardiff, Wales, UK (17th-19th April, 2000).

26 “Development of a red VCSEL-to-plastic fibre module for use in parallel optical data links”, JD Lambkin, T Calvert, J Woodhead, SM Pinches, A Onischenko, TE Sale, TJC Hosea, P Van Daele, K Van de Putte, A Van Hove, A Valster, JG McInerney and PA Porta, at Photonics West 2000, Optoelectronics (Vertical-Cavity Surface-Emitting Lasers IV), San Jose, CA, USA (22-28 Jan. 2000).

25 “Photomodulated reflectance and theoretical analyses of the electronic band structure of Ga1 yInyNxAs1-x/GaAs multi-quantum wells, for x<5%”, S Choulis, S Ghosh, A Lindsay, EP O’Reilly, TJC Hosea, W Stolz and PJ Klar, at Condensed Matter and Material Physics Conference CMMP 99, University of Leicester, Leicester, U.K. (19-22 Dec. 1999).

24 “Non-destructive electroluminescence characterisation of vertical-cavity surface-emitting laser structures”, SB Constant, S Ghosh and TJC Hosea at Condensed Matter and Material Physics Conference CMMP 99, University of Leicester, Leicester, U.K. (19-22 Dec. 1999).

23 “Development of a visible VCSEL-to-plastic fibre module for use in high speed optical data links”, JD Lambkin, T Calvert, J Woodhead, SM Pinches, J Frost, TJC Hosea, P Van Daele, K Van de Putte, A Van Hove, A Valster, JG McInerney and PA Porta, at Paper K-IV.1 European Materials Research Society Symposia, Strasbourg ( Jun. 1999).

22 “Quantum-well and cavity-mode resonance effects in a VCSEL structure, observed using temperature and hydrostatic pressure dependent photoreflectance”, AR Adams, PJS Thomas, D Lancefield, TE Sale, TJC Hosea, PMA Vicente, PJ Klar and A Raymond, at Condensed Matter and Material Physics Conference CMMP 98, UMIST, Manchester, U.K. (21-23 Dec. 1998).

21 “Quantum-well and cavity-mode resonance effects in a vertical-cavity surface-emitting laser structure, observed by photoreflectance using hydrostatic pressure and temperature tuning”, PJ Klar, PMA Vicente, PJS Thomas, D Lancefield, TE Sale, TJC Hosea and AR Adams, 8th International Conference on High Pressure Semiconductor Physics (HPSP-VIII), Aristotle University, Thessaloniki, Greece (9-13 August, 1998).

20 "Optische Untersuchengen der Kavitätsmoden-Exzitonen-Resonanz in VCSEL Strukturen", PJ Klar, G Rowland, PJS Thomas und TJC Hosea, Anmeldung zur Frühjahrstagung der Deutschen Physikalischen Gesellschaft, Regensburg, (23rd-27th Mar 1998).

19 "Comparison of photomodulated reflectance spectroscopy and photomodulated spectroscopic ellipsometry of bulk semiconductors and semiconductor structures", PJS Thomas, PJ Klar, TJC Hosea and RT Carline, at Condensed Matter and Material Physics Conference CMMP 97, University of Exeter, U.K. (Dec. 1997).

18 "Temperature dependent studies of vertical cavity surface emitting laser structures - Comparison of several optical characterisation methods", M Ismail, D Wolverson, PJ Klar, TE Sale, TJC Hosea, J Woodhead and C Button, at Condensed Matter and Material Physics Conference CMMP 97, University of Exeter, U.K. (Dec. 1997).

17 “Photomodulated reflectance study of the cavity-exciton resonance of InGaAs/GaAs/AlGaAs VCSEL structures in the weak coupling regime" PJ Klar, G Rowland, PJS Thomas, A Onischenko, TE Sale, TJC Hosea and R Grey at Condensed Matter and Material Physics Conference CMMP 97, University of Exeter, U.K. (Dec. 1997)

16 "A novel method using photomodulated reflectance spectroscopy for identifying higher order transitions in quantum wells in the active region of VCSELs", G Rowland, PJ Klar, A Onischenko, TE Sale, TJC Hosea and R Grey at Condensed Matter and Material Physics Conference CMMP 97, University of Exeter, U.K. (Dec. 1997)

15 "Optical Characterisation of Vertical Cavity Surface Emitting Laser Structures", PJ Klar and TJC Hosea, at First Annual Workshop, MEL-ARI Opto, Swiss Federal Institute of Technology, Zurich, Switzerland (Oct 15-17, 1997).

14 "Real-time Photo-spectroscopic Ellipsometry Measurement of Electric Fields and Composition in Semiconductors", RT Carline, J Russell, TJC Hosea, PJS Thomas and C Pickering, International Conference on Spectroscopic Ellipsometry, Charleston, South Carolina, USA (May 1997).

13 "Study of H11 and L11 Transition Energies of InGaAs/InGaAsP Quantum Well Structures with Tensile Strain using Room Temperature PR, PL and DCXRD", G Rowland and TJC Hosea, at Condensed Matter and Material Physics Conference CMMP 96, University of York, U.K. (Dec. 1996)

12 "Non-Destructive Optical Characterisation of VCSEL Sub-structure Uniformity" PJS Thomas, D Lancefield, TJC Hosea and J Lambkin, at Condensed Matter and Material Physics Conference CMMP 96, University of York, U.K. (Dec. 1996).

11 “Reflectivity and Modulation Spectroscopy of VCSEL Sub-structures” TJC Hosea, D Lancefield, and JD Lambkin, at Sheffield EPSRC III-V Users’ Workshop, Univ. Sheffield (Jul 1996).

10 "Photoreflectance As a Method of Measuring Thickness Changes", TJC Hosea, at 9th Workshop of International School of Solid State Physics - EPIOPTICS 4, Erice, Sicily (Jun 1996).

9 "Photoreflectance Spectroscopy of Pseudomorphic Si1-xGex(100) Structures x<0.26", RT Carline, C Pickering, TJC Hosea and DJ Hall, at 1st International Conference on Materials for Microelectronics, Barcelona, Spain (Oct. 1994).

8 "Anomalous Behaviour of Stark-Effect in Co2+ Off-Centre Impurities in SrO", VE Bursian, TJC Hosea and NB Manson, at European Conference on Defects in Materials, EURODIM94, Lyons, France (July 1994).

7 "Methods of Estimating Initial Parameters for TDFF Fitting Functions", TJC Hosea, at Condensed Matter and Material Physics Conference CMMP 92, University of Sheffield, U.K. (Dec. 1992).

Teaching

POSTGRADUATE 
                                            Lasers, LEDs and Detectors
                                            Optical Characterisation of Materials

LEVEL 3 HONOURS YEAR
                                            Transmission & Transduction

LEVEL 2
                                            Electromagnetism
                                            Laboratory Physics (and Co-ordinator of Level 2 Labs )
                                            Galaxies & Large Scale Structures

LEVEL 1
                                            Communication Skills
                                            Laboratory Physics (and Co-ordinator of Level 1 Labs)

Departmental Duties

• Departmental Examinations Officer                              (2005 to present) 

• Senior Professional Training Tutor                               (1993 - 2001)

• Co-ordinator of Level 2 Laboratories                              (1990 - 2006)

• Co-ordinator of Level 1 Laboratories                              (2006 - Present) 

• Co-ordinator of Physics with Foundation Year                (1991 - 1996) 

• Co-ordinator of Post-Graduate Demonstrating               (1991 - 1995) 

• Physics Post-graduate Research Tutor                         (2002 - 2006)

• Deputy Chair of Board of Studies                                                (2004 - 2008)

• Jeff is a Chartered Physicist and a Fellow of the Institute of Physics.
• He has supervised 18 PhD students and post-docs while at Surrey and has acted as examiner on seven PhD theses.
• He has been invited to act as optics and spectroscopy consultant to industry, e.g. on the UV properties of portrait glass.
• Incidentally, Hosea (pronounced Hoh-zee-ah) is a Scots name and comes from the Stonehaven area near Aberdeen. Any vague resemblance to hispanic or biblical names is purely coincidental.