Dr Shirong Jin
Research Staff
Email: s.jin@surrey.ac.uk
Phone: Work: 01483 68 9402
Room no: 08 ATI 02
Further information
Publications
Journal articles
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(2012) 'Temperature and Bi-concentration dependence of the bandgap and spin-orbit splitting in InGaBiAs/InP semiconductors for mid-infrared applications'. Applied Physics Letters, 101 (22)doi: 10.1063/1.4768532
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(2012) 'Efficiency-limiting processes in Ga(NAsP)/GaP quantum well lasers'. Applied Physics Letters, 101 (1)doi: 10.1063/1.4733312Full text is available at: http://epubs.surrey.ac.uk/729744/
Abstract
We report on the carrier recombination mechanisms in dilute nitride Ga(NAsP)/GaP quantum well lasers. Spontaneous emission measurements show that defect-related recombination in the devices is less significant compared with other GaAs-based dilute nitride lasers. From temperature dependent measurements, we find that the threshold current density, J is dominated by non-radiative recombination process(es), which account for at least 91 of J at room temperature. The characteristic temperature, T (T ) is measured to be ∼104 K (∼99 K) around 200 K, which drops to ∼58 K ( ∼37 K) around room temperature. Hydrostatic pressure measurements reveal a strong increase of threshold current with increasing pressure. This implies that current leakage dominates carrier recombination which is also responsible for their low T and T values at room temperature. © 2012 American Institute of Physics.
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(2012) 'Recombination mechanisms and band alignment of GaAs1-xBix/GaAs light emitting diodes'. APPLIED PHYSICS LETTERS, 100 (5) Article number ARTN 051105 doi: 10.1063/1.3681139Full text is available at: http://epubs.surrey.ac.uk/531960/
- . (2012) 'InGaBiAs/InP semiconductors for mid-infrared applications: Dependence of bandgap and spin-orbit splitting on temperature and bismuth content'. ICP 2012 - 3rd International Conference on Photonics 2012, Proceedings, , pp. 154-158.
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(2006) 'Spectroscopy of GaAs/AlGaAs quantum-cascade lasers using hydrostatic pressure'. AMER INST PHYSICS APPLIED PHYSICS LETTERS, 89 (22) Article number ARTN 221105 doi: 10.1063/1.2364159Full text is available at: http://epubs.surrey.ac.uk/733502/
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(2006) 'Carrier recombination in 1.3 mu m GaAsSb/GaAs quantum well lasers'. AMER INST PHYSICS APPLIED PHYSICS LETTERS, 89 (17) Article number ARTN 173509 doi: 10.1063/1.2369649Full text is available at: http://epubs.surrey.ac.uk/104830/
- . (2006) 'Analysis of the major loss processes in mid-infrared type-II "W" diode lasers'. Conference Digest - IEEE International Semiconductor Laser Conference, , pp. 43-44.
Conference papers
- . (2011) 'The potential role of Bismide alloys in future photonic devices'. International Conference on Transparent Optical Networks,
- . (2011) 'Physical properties of monolithically integrated Ga(NAsP)/(BGa)P QW lasers on silicon'. IEEE International Conference on Group IV Photonics GFP, , pp. 148-150.
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(2010) 'Recombination and loss mechanisms in GaNAsP/GaP QW lasers'. 2010 Photonics Global Conference, PGC 2010, Full text is available at: http://epubs.surrey.ac.uk/733517/
Abstract
In this paper the authors present a comprehensive study of the threshold current and its temperature dependence in novel direct band-gap Ga(NAsP)/GaP QW lasers which provide a potential route to lattice matched monolithic integration of long term stable semiconductor lasers on silicon. It is found that near room temperature, the threshold current is dominated by nonradiative recombination accounting for ∼87% of the total threshold current density. A strong increase in threshold current with hydrostatic pressure implies that a carrier leakage path is the dominant carrier recombination mechanism.
- . (2010) 'Physical properties of Ga(NAsP)/GaP QW lasers grown by MOVPE'. 2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010, , pp. 65-66.
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(2010) 'Influence of device structures on carrier recombination in GaAsSb/GaAs QW lasers'. 2010 Photonics Global Conference, PGC 2010, Full text is available at: http://epubs.surrey.ac.uk/733523/
Abstract
We investigate the temperature and pressure dependence of carrier recombination processes occurring in various GaAsSb/GaAs QW laser structures grown under similar growth conditions. Thermally activated carrier leakage via defects is found to be very sensitive to the strain induced interface imperfections. Nonradiative recombination is found to be sensitive to the number of QWs. A strain compensated MQW structure leads to a reduced contribution of nonradiative recombination to the threshold current density (J
th) and a high characteristic temperature (T 0 ) of 73K at room temperature. - . (2010) 'MOVPE growth and characterization of Ga(NAsP) laser structures monolithically integrated on Si (001) substrates'. Conference Digest - IEEE International Semiconductor Laser Conference, , pp. 143-144.
- . (2010) 'Role of growth temperature on the physical characteristics of GaAsSb/GaAs QW lasers'. 2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010, , pp. 59-60.
- . (2010) 'Lasing properties of monolithically integrated Ga(NAsP)/(BGa)P QW lasers on a Silicon substrate grown by MOVPE'. Conference Digest - IEEE International Semiconductor Laser Conference, , pp. 109-110.
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(2010) 'Improved performance of GaAsSb/GaAs SQW lasers'. Proceedings of SPIE - The International Society for Optical Engineering, 7616doi: 10.1117/12.842253Full text is available at: http://epubs.surrey.ac.uk/733522/
Abstract
This paper reports the improvements and limitations of MBE grown 1.3μm GaAsSb/GaAs single QW lasers. At room temperature, the devices show a low threshold current density (J ) of 253 Acm , a transparent current density of 98 Acm , an internal quantum efficiency of 71%, an optical loss of 18 cm and a characteristic temperature (T ) = 51K. The defect related recombination in these devices is negligible and the primary non-radiative current path has a stronger dependence on the carrier density than the radiative current contributing to ∼84% of the threshold current at RT. From high hydrostatic pressure dependent measurements, a slight decrease followed by the strong increase in threshold current with pressure is observed, suggesting that the device performance is limited to both Auger recombination and carrier leakage. © 2010 Copyright SPIE - The International Society for Optical Engineering.
- . (2007) 'Temperature and pressure dependence of carrier recombination processes in GaAsSb/GaAs quantum well lasers'. WILEY-V C H VERLAG GMBH PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Barcelona, SPAIN: 12th International Conference on High Pressure Semiconductor Physics (HPSP-12) 244 (1), pp. 197-202.
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(2007) 'Band alignment and carrier recombination in GaAsSb/GaAs quantum wells'. AMER INST PHYSICS Physics of Semiconductors, Pts A and B, Vienna, AUSTRIA: 28th International Conference on the Physics of Semiconductors (ICPS-28) 893, pp. 1431-1432.Full text is available at: http://epubs.surrey.ac.uk/733534/
- . (2007) 'Carrier recombination mechanisms in mid-infrared GaInAsSb quantum well lasers'. WILEY-V C H VERLAG GMBH PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Barcelona, SPAIN: 12th International Conference on High Pressure Semiconductor Physics (HPSP-12) 244 (1), pp. 203-207.
- . (2007) 'High pressure studies of mid-infrared type-II "W" diode lasers at cryogenic temperatures'. WILEY-V C H VERLAG GMBH PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Barcelona, SPAIN: 12th International Conference on High Pressure Semiconductor Physics (HPSP-12) 244 (1), pp. 224-228.