Professor Kevin Homewood

Research Interests

At Surrey he has established world-class facilities in electronic and optical characterisation of semiconductors and an active personal research group, which he has led for the past 19 years. He has recently concentrated on developing novel approaches to silicon based optoelectronics and this work is recognised to be world leading in many areas. Kevin is an acknowledged world expert in semiconductor materials and devices and has published more than 180 papers in international scientific journals, including two papers in NATURE that have stimulated international research efforts in semiconducting silicides and silicon optoelectronics. He was recently awarded a prestigous European Research Council Advanced Investigator Grant (SILAMPS) of around £ 2,000,000 to develop silicon based lasers and optical amplifiers over the next five years. He was a cofounder and is a Director of SiLight Technology Ltd.

Research Collaborations

European Research Council Advanced Investigator Grant (SILAMPS)

Teaching

  • Silicon Device Technology (L3)
  • Optoelectronics (L3)
  • Final UG and MSc Projects
  • Tutorials

Departmental Duties

Semiconductor Teaching Coordinator

Projects are available in the general area of silicon based light emission, lasing, optical amplification and photovoltaic devices.

For further details contact me by email: k.homewood@surrey.ac.uk

Contact Me

Publications

Highlights

  • Lourenco MA, Gwilliam RM, Homewood KP. (2008) 'Silicon light emitting diodes emitting over the 1.2-1.4 mu m wavelength region in the extended optical communication band'. AMER INST PHYSICS APPLIED PHYSICS LETTERS, 92 (16) Article number ARTN 161108
  • Lourenco MA, Gwilliam RM, Homewood KP. (2007) 'Extraordinary optical gain from silicon implanted with erbium'. AMER INST PHYSICS APPLIED PHYSICS LETTERS, 91 (14) Article number ARTN 141122
  • Lourenco MA, Milosavljevic M, Shao G, Gwilliam RM, Homewood KP. (2007) 'Dislocation engineered silicon light emitting devices'. ELSEVIER SCIENCE SA THIN SOLID FILMS, Kyoto, JAPAN: Asia-Pacific Conference on Semiconducting Silicides 515 (22), pp. 8113-8117.
  • Wong SP, Chow CF, Roller J, Chong YT, Li Q, Lourenco MA, Homewood KP. (2007) 'Structures and light emission properties of nanocrystalline FeSi2/Si formed by ion beam synthesis with a metal vapor vacuum arc ion source'. ELSEVIER SCIENCE SA THIN SOLID FILMS, Kyoto, JAPAN: Asia-Pacific Conference on Semiconducting Silicides 515 (22), pp. 8122-8128.

Journal articles

  • Litvinenko KL, Li J, Stavrias N, Meaney AJ, Christianen PCM, Engelkamp H, Homewood KP, Pidgeon CR, Murdin BN. (2016) 'The quadratic Zeeman effect used for state-radius determination in neutral donors and donor bound excitons in Si:P'. IOP PUBLISHING LTD SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 31 (4) Article number ARTN 045007
  • Homewood KP, Lourenço MA. (2015) 'Optoelectronics: The rise of the GeSn laser'. Nature Photonics, 9 (2), pp. 78-79.
  • Lourenco MA, Ludurczak W, Prins AD, Milosavljevic M, Gwilliam RM, Homewood KP. (2015) 'Light emission from rare-earths in dislocation engineered silicon substrates'. IOP PUBLISHING LTD JAPANESE JOURNAL OF APPLIED PHYSICS, 54 (7) Article number ARTN 07JB01
  • Obradović M, Pjević D, Peruško D, Grce A, Milosavljević M, Milosavljević M, Homewood KP, Siketić Z. (2015) 'Effects of helium ion irradiation on bubble formation in AlN/TiN multilayered system'. Thin Solid Films,
    [ Status: Accepted ]
  • Hughes MA, Lourenço MA, Carey JD, Murdin B, Homewood KP. (2014) 'Crystal field analysis of Dy and Tm implanted silicon for photonic and quantum technologies'. Optics Express, 22 (24), pp. 29292-29303.

    Abstract

    © 2014 Optical Society of America.We report the lattice site and symmetry of optically active Dy3+ and Tm3+ implanted Si. Local symmetry was determined by fitting crystal field parameters (CFPs), corresponding to various common symmetries, to the ground state splitting determined by photoluminescence measurements. These CFP values were then used to calculate the splitting of every J manifold. We find that both Dy and Tm ions are in a Si substitution site with local tetragonal symmetry. Knowledge of rare-earth ion symmetry is important in maximising the number of optically active centres and for quantum technology applications where local symmetry can be used to control decoherence.

  • Hughes MA, Fedorenko Y, Gholipour B, Yao J, Lee TH, Gwilliam RM, Homewood KP, Hinder S, Hewak DW, Elliott SR, Curry RJ. (2014) 'n-type chalcogenides by ion implantation.'. Nat Commun, England: 5
  • Hughes MA, Fedorenko Y, Gwilliam RM, Homewood KP, Hinder S, Gholipour B, Hewak DW, Lee TH, Elliott SR, Curry RJ. (2014) 'Ion-implantation-enhanced chalcogenide-glass resistive-switching devices'. Applied Physics Letters, 105 (8)
  • Hughes MA, Homewood KP, Curry RJ, Ohishi Y, Suzuki T. (2014) 'Waveguides in Ni-doped glass and glass-ceramic written with a 1 kHz femtosecond laser'. Optical Materials, 36 (9), pp. 1604-1608.
  • Fedorenko YG, Hughes MA, Colaux JL, Jeynes C, Gwilliam RM, Homewood KP, Yao J, Hewak DW, Lee TH, Elliott SR, Gholipour B, Curry RJ. (2014) 'Electrical properties of amorphous chalcogenide/silicon heterojunctions modified by ion implantation'. Proceedings of SPIE - The International Society for Optical Engineering, 8982
  • Hughes MA, Homewood KP, Curry RJ, Ohno Y, Mizutani T. (2014) 'Split gate and asymmetric contact carbon nanotube optical devices'. Proceedings of SPIE - The International Society for Optical Engineering, 8982

    Abstract

    Asymmetric contacts or split gate geometries can be used to obtain rectification, electroluminescence (EL) and photocurrent from carbon nanotube field effect transistors. Here, we report devices with both split gates and asymmetric contacts and show that device parameters can be optimised with an appropriate split gate bias, giving the ability to select the rectification direction, modify the reverse bias saturation current and the ideality factor. When operated as a photodiode, the short circuit current and open circuit voltage can be modified by the split gate bias, and the estimated power conversion efficiency was 1×10-6. When using split gates and symmetric contacts, strong EL peaking at 0.86 eV was observed with a full width at half maximum varying between 64 and 120 meV, depending on the bias configuration. The power and quantum efficiency of the EL was estimated to be around 1×10-6 and 1×10-5 respectively.

  • Hughes MA, Federenko Y, Lee TH, Yao J, Gholipour B, Gwilliam RM, Homewood KP, Hewak DW, Elliott SR, Curry RJ. (2014) 'Optical and electronic properties of bismuth-implanted glasses'. Proceedings of SPIE - The International Society for Optical Engineering, 8982

    Abstract

    Photoluminescence (PL) and excitation spectra of Bi melt-doped oxide and chalcogenide glasses are very similar, indicating the same Bi center is present. When implanted with Bi, chalcogenide, phosphate and silica glasses, and BaF2 crystals, all display characteristically different PL spectra to when Bi is incorporated by melt-doping. This indicates that ion implantation is able to generate Bi centers which are not present in samples whose dopants are introduced during melting. Bi-related PL bands have been observed in glasses with very similar compositions to those in which carrier-type reversal has been observed, indicating that these phenomena are related to the same Bi centers, which we suggest are interstitial Bi2+ and Bi clusters.

  • Hughes MA, Homewood KP, Curry RJ, Ohno Y, Mizutani T. (2013) 'An ultra-low leakage current single carbon nanotube diode with split-gate and asymmetric contact geometry'. Applied Physics Letters, 103 (13)

    Abstract

    A single carbon nanotube diode is reported, with Ti and Pd contacts, and split gates. Without gate bias the device displays strong rectification, with a leakage current (I0) of 6 × 10-16 A, and an ideality factor (η) of 1.38. When the gate above the Ti contact is biased negatively the diode inverts. When positive bias is then applied to the gate above the Pd contact minority carrier injection is suppressed. Configured such I0 and η were 2 × 10-14 A and 2.01, respectively. Electrical characterization indicates that the Schottky barrier height for electrons is lower for the Pd contact than the Ti contact. © 2013 AIP Publishing LLC.

  • Lourenço MA, Mustafa Z, Ludurczak W, Wong L, Gwilliam RM, Homewood KP. (2013) 'High temperature luminescence of Dy3+ in crystalline silicon in the optical communication and eye-safe spectral regions'. Optics Letters, 38 (18), pp. 3669-3672.
  • Hughes MA, Gwilliam RM, Homewood K, Gholipour B, Hewak DW, Lee TH, Elliott SR, Suzuki T, Ohishi Y, Kohoutek T, Curry RJ. (2013) 'On the analogy between photoluminescence and carrier-type reversal in Bi-and Pb-doped glasses'. Optics Express, 21 (7), pp. 8101-8115.

    Abstract

    Reaction order in Bi-doped oxide glasses depends on the optical basicity of the glass host. Red and NIR photoluminescence (PL) bands result from Bi2+ and Bin clusters, respectively. Very similar centers are present in Bi-and Pb-doped oxide and chalcogenide glasses. Bi-implanted and Bi melt-doped chalcogenide glasses display new PL bands, indicating that new Bi centers are formed. Bi-related PL bands have been observed in glasses with very similar compositions to those in which carrier-type reversal has been observed, indicating that these phenomena are related to the same Bi centers, which we suggest are interstitial Bi2+ and Bi clusters. © 2013 Optical Society of America.

  • Milosavljević M, Toprek D, Obradović M, Grce A, Peruško D, Dražič G, Kovač J, Homewood KP. (2013) 'Ion irradiation induced solid-state amorphous reaction in Ni/Ti multilayers'. Applied Surface Science,
  • Milosavljević M, Toprek D, Obradović M, Grce A, Peruško D, Dražič G, Kovač J, Homewood KP. (2013) 'Ion irradiation induced solid-state amorphous reaction in Ni/Ti multilayers'. Applied Surface Science, 268, pp. 516-523.
  • Berhanuddin DD, Lourenço MA, Jeynes C, Milosavljević M, Gwilliam RM, Homewood KP. (2012) 'Structural analysis of silicon co-implanted with carbon and high energy proton for the formation of the lasing G-centre'. Journal of Applied Physics, 112 (10)

    Abstract

    We investigate a new approach for efficient generation of the lasing G-centre (carbon substitutional-silicon self-interstitial complex) which crucially is fully compatible with standard silicon ultra-large-scale integration technology. Silicon wafers were implanted with carbon and irradiated with high energy protons to produce self-interstitials that are crucial in the formation of the G-centre. Rutherford backscattering spectrometry (RBS) and transmission electron microscopy were used to study the structure of the post-implanted silicon samples and to investigate the behaviour of the self-interstitials and damage introduced by the carbon and proton implantation. The effect of substrate pre-amorphisation on the G-centre luminescence intensity and formation properties was also investigated by implanting Ge prior to the carbon and proton irradiation. Photoluminescence measurements and RBS results show a significantly higher G-centre peak intensity and silicon yield, respectively, in samples without pre-amorphisation. © 2012 American Institute of Physics.

  • Berhanuddin DD, Lourenco MA, Gwilliam RM, Homewood KP. (2012) 'Co-Implantation of Carbon and Protons: An Integrated Silicon Device Technology Compatible Method to Generate the Lasing G-Center'. WILEY-V C H VERLAG GMBH ADVANCED FUNCTIONAL MATERIALS, 22 (13), pp. 2709-2712.
  • Antwis L, Gwilliam R, Smith A, Homewood K, Jeynes C. (2012) 'Characterization of a-FeSi 2/c-Si heterojunctions for photovoltaic applications'. Semiconductor Science and Technology, 27 (3)
  • Antwis L, Gwilliam R, Smith A, Jeynes C, Homewood K. (2012) 'Characterization of a-FeSi /c-Si heterojunctions for photovoltaic applications'. Semiconductor Science and Technology, 27 (3)
  • Petrović S, Peruško D, Mitrić M, Kovac J, Dražić G, Gaković B, Homewood KP, Milosavljević M. (2012) 'Formation of intermetallic phase in Ni/Ti multilayer structure by ion implantation and thermal annealing'. Intermetallics, 25, pp. 27-33.
  • Milosavljevic M, Milinovic V, Perusko D, Grce A, Stojanovic M, Pjevic D, Mitric M, Kovac J, Homewood KP. (2011) 'Stability of nano-scaled Ta/Ti multilayers upon argon ion irradiation'. ELSEVIER SCIENCE BV NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 269 (19), pp. 2090-2097.
  • Milosavljevic M, Lourenco MA, Gwilliam RM, Homewood KP. (2011) 'Role of heavy ion co-implantation and thermal spikes on the development of dislocation loops in nanoengineered silicon light emitting diodes'. AMER INST PHYSICS JOURNAL OF APPLIED PHYSICS, 110 (3) Article number ARTN 033508
  • Lourenço M, Gwilliam R, Homewood K. (2011) 'Eye-safe 2 μm luminescence from thulium-doped silicon.'. Optical Society of America Opt Lett, United States: 36 (2), pp. 169-171.

    Abstract

    We report on photoluminescence in the 1.7-2.1 μm range of silicon doped with thulium. This is achieved by the implantation of Tm into silicon that has been codoped with boron to reduce the thermal quenching. At least six strong lines can be distinguished at 80 K; at 300 K, the spectrum is dominated by the main emission at 2 μm. These emissions are attributed to the trivalent Tm(3+) internal transitions between the first excited state and the ground state.

  • Fedotova JA, Przewoznik J, Kapusta C, Milosavljevi M, Kasiuk JV, Zukrowski J, Sikora M, Maximenko AA, Szepietowska D, Homewood KP. (2011) 'Magnetoresistance in FeCoZrAl2O3 nanocomposite films containing metal coreoxide shell nanogranules'. Journal of Physics D: Applied Physics, 44 (49) Article number 495001
  • Maeda Y, Terai Y, Homewood KP, Takarabe K, Yamaguchi K, Suzuki M, Sadoh T, Nakamura Y. (2011) 'Preface'. Thin Solid Films, 519 (24), pp. 8433-8433.
  • Milosavljević M, Milinović V, Peruško D, Grce A, Stojanović M, Pjević D, Mitrić M, Kovač J, Homewood KP. (2011) 'Stability of nano-scaled Ta/Ti multilayers upon argon ion irradiation'. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms,
  • Lourenço MA, Homewood KP. (2011) 'Crystalline-silicon-based infra-red LEDs and routes to laser diodes'. Elsevier Thin Solid Films, 519 (24), pp. 8441-8445.

    Abstract

    We review progress in silicon LEDs using dislocation engineering to achieve high temperature operation, a process that is fully CMOS (Complementary Metal Oxide Semiconductor) compatible. We concentrate on devices operating in the near infra-red where high value applications are. The need for silicon emitters, lasers and optical amplifiers is discussed followed by an outline of previous approaches and possible future routes explored. Results on gain in silicon are reported and routes to electrically pumped injection lasers and optical amplifiers considered. Extension of 1.1 and 1.5 μm devices to other wavelengths is discussed

  • Milosavljevic M, Wong L, Lourenco M, Valizadeh R, Colligon J, Shao G, Homewood K. (2010) 'Correlation of Structural and Optical Properties of Sputtered FeSi2 Thin Films'. JAPAN SOC APPLIED PHYSICS JAPANESE JOURNAL OF APPLIED PHYSICS, 49 (8) Article number ARTN 081401
  • Homewood KP, Lourenco MA, Gwilliam RM. (2010) 'Nano-engineered silicon light emitting diodes and optically active waveguides'. ELSEVIER SCIENCE BV OPTICAL MATERIALS, Herceg Novi, MONTENEGRO: 32 (12), pp. 1601-1605.
  • Lourenco MA, Opoku C, Gwilliam RM, Homewood KP. (2010) 'Photoluminescence study of thulium-doped silicon substrates for light emitting diodes'. ELSEVIER SCIENCE BV OPTICAL MATERIALS, Herceg Novi, MONTENEGRO: 32 (12), pp. 1597-1600.
  • Sun CM, Tsang HK, Wong SP, Cheung WY, Ke N, Lourenco MA, Homewood KP. (2009) 'Electroluminescence from metal-oxide-silicon tunneling diode with ion-beam-synthesized beta-FeSi2 precipitates embedded in the active region'. ELSEVIER SCIENCE BV NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 267 (7), pp. 1081-1084.
  • Lourenco MA, Homewood KP. (2008) 'Dislocation-engineered silicon light emitters for photonic integration'. IOP PUBLISHING LTD SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 23 (6) Article number ARTN 064005
  • Lourenco MA, Gwilliam RM, Homewood KP. (2008) 'Silicon light emitting diodes emitting over the 1.2-1.4 mu m wavelength region in the extended optical communication band'. AMER INST PHYSICS APPLIED PHYSICS LETTERS, 92 (16) Article number ARTN 161108
  • Wong L, Milosavljevic M, Lourenco MA, Shao G, Valizadeh R, Colligon JS, Homewood KP. (2008) 'Annealing and deposition temperature dependence of the bandgap of amorphous FeSi(2) fabricated by co-sputter deposition'. IOP PUBLISHING LTD SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 23 (3) Article number ARTN 035007
  • Milgram JN, Knights AP, Homewood KP, Gwilliam RM. (2007) 'Considerations for interpretation of luminescence from silicon-on-insulator light emitting structures'. IOP PUBLISHING LTD SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 22 (10), pp. 1104-1110.
  • Lourenco MA, Gwilliam RM, Homewood KP. (2007) 'Extraordinary optical gain from silicon implanted with erbium'. AMER INST PHYSICS APPLIED PHYSICS LETTERS, 91 (14) Article number ARTN 141122
  • Gao Y, Shao GS, Li Q, Xu YM, Wong SP, Zhou MY, Lourenco MA, Homewood KP. (2007) 'Microstructural and optical properties of semiconducting MnSi1.7 synthesized by ion implantation'. INST PURE APPLIED PHYSICS JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 46 (9A), pp. 5777-5779.
  • Maeda Y, Homewood KP, Sadoh T, Terai Y, Yamaguchi K, Akiyama K. (2007) 'Asia-Pacific conference on semiconducting silicides science and technology towards sustainable optoelectronics (APAC-SILICIDE 2006) July 29-31, 2006, Kyoto - Preface'. ELSEVIER SCIENCE SA THIN SOLID FILMS, 515 (22), pp. 8101-8101.
  • Gao Y, Chong YT, Chow CF, Wong SP, Homewood KP, Li Q. (2007) 'Post-annealing effect on the microstructure and photoluminescence properties of the ion beam synthesized FeSi2 precipitates in Si'. ELSEVIER SCIENCE BV NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 259 (2), pp. 871-874.
  • Maeda Y, Homewood KP, Sadoh T, Terai Y, Yamaguchi K, Akiyama K. (2007) 'Editorial'. Thin Solid Films, 515 (22)
  • Milosavljevic M, Lourenco MA, Shao G, Gwilliam RM, Homewood KP. (2006) 'Optimising dislocation-engineered silicon light-emitting diodes'. SPRINGER APPLIED PHYSICS B-LASERS AND OPTICS, 83 (2), pp. 289-294.
  • Milosavljevic M, Shao G, Lourenco MA, Gwilliam RM, Homewood KP, Edwards SP, Valizadeh R, Colligon JS. (2005) 'Transition from amorphous to crystalline beta phase in co-sputtered FeSi2 films as a function of temperature'. AMER INST PHYSICS JOURNAL OF APPLIED PHYSICS, 98 (12) Article number ARTN 123506
  • Homewood KP, Lourenco MA, Milosavljevic M, Shao G, Gwilliam RM. (2005) 'Dislocation engineered silicon for light emission'. IEEE 2005 IEEE LEOS Annual Meeting Conference Proceedings (LEOS), Sydney, AUSTRALIA: , pp. 608-609.
  • W. T. Young , S. R. P. silva , Anguita JV, shannon J, k. p. homewood , b. j. sealy . (2000) 'Low temperature growth of gallium nitride'. Diamond and Related Materials,

Conference papers

  • Lourenço MA, Wong L, Gwilliam RM, Homewood KP. (2010) 'Luminescence of Tm3+in dislocation engineered silicon substrates'. Proceedings of 7th IEEE International Conference on Group IV Photonics, Beijing, China: 7th IEEE GFP, pp. 159-161.
  • Homewood KP, Lourenço MA, Gwilliam RM. (2010) '1.1 to 1.6 μm silicon light emitting diodes and optical gain'. Proceedings of IEEE 7th International Conference on Group IV Photonics GFP, Beijing, China: 7th IEEE GFP, pp. 302-304.
  • Antwis L, Wong L, Smith A, Homewood K, Jeynes C, Gwilliam R. (2010) 'Optimization and characterisation of amorphous iron disilicide formed by ion beam mixing of Fe/Si multilayer structures for photovoltaic applications'. AIP Conference Proceedings, Kyoto, Japan: Ion Implantation Technology 2101: 18th International Conference on Ion Implantation Technology IIT 2010 1321, pp. 278-281.
  • Milosavljevic M, Lourenco MA, Shao G, Gwilliam RM, Homewood KP. (2008) 'Formation of dislocation loops in silicon by ion irradiation for silicon light emitting diodes'. ELSEVIER SCIENCE BV NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Florence, ITALY: 9th European Conference on Accelerators in Applied Research and Technology 266 (10), pp. 2470-2474.
  • Gao Y, Chen RS, Zhou MY, Lourenco MA, Homewood KP, Shao G. (2008) 'Structural, electronic, and optical properties of Mn4Si 7'. Proceedings of SPIE: Thin Film Materials, Shanghai, China: Sixth International Conference on Thin Film Physics and Applications (TFPA 2007) 6984
  • Lourenco MA, Milosavljevic M, Shao G, Gwilliam RM, Homewood KP. (2007) 'Dislocation engineered silicon light emitting devices'. ELSEVIER SCIENCE SA THIN SOLID FILMS, Kyoto, JAPAN: Asia-Pacific Conference on Semiconducting Silicides 515 (22), pp. 8113-8117.
  • Wong SP, Chow CF, Roller J, Chong YT, Li Q, Lourenco MA, Homewood KP. (2007) 'Structures and light emission properties of nanocrystalline FeSi2/Si formed by ion beam synthesis with a metal vapor vacuum arc ion source'. ELSEVIER SCIENCE SA THIN SOLID FILMS, Kyoto, JAPAN: Asia-Pacific Conference on Semiconducting Silicides 515 (22), pp. 8122-8128.
  • Ishibashi Y, Kobayashi T, Prins AD, Nakahara J, Lourenco MA, Gwilliam RM, Homewood KP. (2007) 'Excitation and pressure effects on photoluminescence from dislocation engineered silicon material'. WILEY-V C H VERLAG GMBH PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Barcelona, SPAIN: 12th International Conference on High Pressure Semiconductor Physics (HPSP-12) 244 (1), pp. 402-406.
  • Lourenco MA, Milosavljevic M, Shao G, Gwilliam RM, Homewood KP. (2006) 'Boron engineered dislocation loops for efficient room temperature silicon light emitting diodes'. ELSEVIER SCIENCE SA THIN SOLID FILMS, Singapore, SINGAPORE: 3rd International Conference on Materials for Advanced Technologies/9th International Conference on Advanced Materials 504 (1-2), pp. 36-40.

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