Programme

The 15th MIOMD conference will be held in an online format. Owing to the large geographical spread of the speakers and delegates, we will run the majority of the conference in an asynchronous format using pre-recorded presentations. In addition, our plenary presentations will be delivered live as webinars.

We are delighted to be able to confirm the following eminent speakers. Our speakers cover a wide range of topics from mid-infrared materials growth and fabrication, through to devices and systems applications.

Confirmed invited speakers

SpeakerOrganisationTalk title
Amy LiuIQEProgress in MBE production technology for GaSb-based IR photodetector structures
David LacknerFraunhofer ISE, FreiburgDevelopment of metamorphic buffer layers for MOCVD growth on GaAs
Francois JulienUniversité Paris SaclayQuantum cascade detectors based on wide band-gap semiconductors
Giacomo ScalariETH ZürichTHz ultrastrong coupling with Landau polaritons: Non-local effects and single meta-atom spectroscopy
Hiromi FujitaAsahi Kasei Microdevices CorporationDevelopment of highly mismatched AlInSb/GaAs mid-infrared LEDs/PDs and its application to gas sensing
Hon Ki Tsang / Yi WangChinese University of Hong KongHybrid integration of 2D materials for photonic devices
Jacopo FrigerioPolitecnico di MilanoHeavily doped Ge-on-Si: a promising material platform for mid-infrared plasmonics
Jaime Gomez-RivasEindhoven University of technologyBroadband THz near-field microscopy
Jana Jagerska University of TromsoNanophotonic waveguides with high field confinement in air for on-chip trace gas sensing
John PrineasUniversity of IowaAdvances in materials and structures for high efficiency mid-infrared light emitting diodes
Mikhail BelkinWSI, TU-MunichMid-infrared photonic integration on InP
Milos NedeljkovicUniversity of SouthamptonSilicon photonic photodetectors, sensors, and spectrometers for the mid-infrared
Mircea GuinaTampere UniversityBroadband light sources at 2-3 µm region based on GaSb/SOI hybrid integration
Natalie WheelerUniversity of SouthamptonHollow core antiresonant fibres for mid-infrared beam delivery and applications
Roland TeissierUniversity of MontpellierLong wavelength mid-IR QCLs: state of the art, physics and applications
Sergey MorozovInstitute for Physics of Microstructures of Russian Academy of SciencesMid-IR stimulated emission in HgCdTe QW heterostructures with dielectric and "phonon" waveguides
Stefan HuggerFraunhofer IAF, FreiburgMOEMS external cavity QCLs for spectroscopic sensing
Yi ZhouShanghai Institute of Technical PhysicsProgress on mid wavelength interband cascade photo devices based on InAs substrate @ SITP

Sessions

All sessions will be pre-recorded. You can download the conference schedule (PDF) for your own reference.

Wednesday 1 September 2021

SpeakerOrganisationTalk title
Roland TeissierUniversity of MontpellierLong wavelength mid-IR QCLs: state of the art, physics and applications
Igor VurgaftmanNaval Research LaboratoryToward robust and practical interband cascade laser frequency combs
Yuzhe LinInstitute of Semiconductors, Chinese Academy of SciencesDevelopment of InAs-based interband cascade lasers
Jeremy MassengaleUniversity of OklahomaLong wavelength interband cascade lasers with reduced thresholds
Pierre DidierTelecom Paris - Institut polytechnique de ParisAnalysis and simulation of the relative intensity noise in a Fabry-Perot interband cascade laser highlights relaxation oscillations around GHz
Weicheng YouThe Ohio State UniversityComparison of BCl3/Ar and CH4/Ar plasma chemistries for dry etching of interband cascade lasers

SpeakerOrganisationTalk title
Francois JulienUniversity Paris-SaclayQuantum cascade detectors based on wide band-gap semiconductor
Georg MarschickTechnische Universität WienA novel quantum cascade detector (QCD) for low attenuation free-space telecommunication around 9 μm wavelength
Dhafer AlshahraniCardiff UniversityOptical and electrical performance of a 5 μm InAs/GaSb type-II superlattice photodiode for NOx gas detection
Laura HanksLancaster UniversityDevelopment of quasi-planar In0.14Ga0.86As0.10Sb0.90 pBn devices for spectroscopic sensing
Rui YangUniversity of OklahomaFundamental limit of detectivity of infrared photodetectors

SpeakerOrganisationTalk title
Milos NedeljkovicUniversity of SouthamptonSilicon photonic photodetectors, sensors, and spectrometers for the mid-infrared
Chen WeiUniversity of SouthamptonMid-infrared SOI waveguide thermo-optic fourier transform spectrometer
Martino De CarloPhotonics Research GroupProposal of a semi-integrated QEPAS sensor
Yanli QiUniversity of SouthamptonSilicon waveguides integrated with switch for low noise mid-infrared sensor

SpeakerOrganisationTalk title
Stefan HuggerFraunhofer Institute for Applied Solid State PhysicsMOEMS external cavity QCLs for spectroscopic sensing
Melissa NajemInstitut of Electronic and Systems, University of Montpellier, FranceMultimodal infrared vibrational spectroscopy from 1.1 to 6.5 microns using MIM aluminium bowties
Diba AyacheUniversity of MontpellierInfrared spectroscopy for exhaled breath diagnosis
Pierre FehlenNS3E-ISL, l'Université de Strasbourg & IES, Université de MontpellierSurface-enhanced infrared spectroscopy for selective and sensitive detection of organophosphorus compounds
Jana JagerskaUniversity of TromsoNanophotonic waveguides with high field confinement in air for on-chip trace gas sensing

Thursday 2 September 2021

SpeakerOrganisationTalk title
Amy LiuIQE, Inc.Progress in MBE production technology for GaSb-based IR photodetector structures
Marko MilosavljevicArizona State UniversityOptical properties of InAsSbBi and GaInAsSbBi grown on GaSb substrates
Nicholas BaileyUniversity of SheffieldBi surfactant for tailoring InAs(Bi) quantum dots
Shi-Jane TsaiGraduate Institute of Electronics Engineering, National Taiwan UniversityInfrared GaAsBi grown on GaAs by molecular beam epitaxy
Stephen SchaeferArizona State UniversityTemperature and excitation dependent photoluminescence measurements of nonradiative lifetime in InAs(SbBi)
David LacknerFraunhofer ISE, FreiburgBridging the gap: Developing engineered substrates spanning lattice constants between GaAs and InP

SpeakerOrganisationTalk title
Hiromi FujitaAsahi Kasei Microdevices CorporationDevelopment of highly mismatched AlInSb/GaAs mid-infrared LEDs/PDs and its application to gas sensing
Abdullah AltayarLancaster UniversityMid-infrared InAsSb/AlInAs multi-quantum well light emitting diodes on GaAs and silicon
Matthew SuttingerAir Force Research LaboratoryNotched angled cavity waveguides for mid-infrared semiconductor lasers
Christopher BroderickTyndall National Institute, IrelandTheory of emerging III-V heterostructures for mid-infrared emitters
John PrineasUniversity of IowaAdvances in materials and structures for high efficiency mid-infrared light emitting diodes

SpeakerOrganisationTalk title
Yi ZhouShanghai Institute of Technical Physics, CASInterband cascade infrared photodetectors and light emitting diodes at high temperatures based on InAs substrate
Dominic KwanCardiff UniversityType-II InAs/GaSb superlattices on GaAs for 10 μm infrared detection
David TingNASA Jet Propulsion Laboratory, California Institute of TechnologyVery long wavelength InAs/InAsSb type-II superlattice barrier infrared detectors and focal plane arrays
Andreas BaderUniversity of WürzburgGrowth of interband cascade detectors for light detection in the mid infrared spectral band
Andrew BainbridgeLancaster UniversityDesign and analysis of InAs-based resonant cavity enhanced photodiodes

SpeakerOrganisationTalk title
Mikhail
Belkin
Walter Schottky InstituteMid-infrared photonic integration on InP
Oluwatobi OlorunsolaUniversity of ArkansasComparative study of SiGeSn/GeSn quantum wells towards high-performance all-group-IV optoelectronics
Tyler McCarthyArizona State University - MBE OptoelectronicsOptimal design of momentum (k)-space charge separation IR photodetectors using SiGeSn alloys
Callum StirlingUniversity of SouthamptonMid-infrared SOI waveguides with broadband single-mode propagation
Jacopo FrigerioPolitecnico di MilanoHeavily doped Ge-on-Si: a promising material platform for mid-infrared plasmonics

SpeakerOrganisationPoster title
Dominic DuffyUniversity of SurreyRadiative characteristics of low threshold current type-II Ga(InAs)/Ga(AsSb) “W”-lasers on GaAs
WeiJiang LiKey Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of SciencesSingle-mode GaAs/AlGaAs quantum cascade lasers emitting at 4.9 THz
Rinki AggarwalAmity University NoidaHigh efficiency PbS/Si NW heterojunction photodetectors using chemical bath deposition
Ran YinInstitute of Semiconductors, Chinese Academy of SciencesThe temperature influence of anti-reflection coating on QCL facet
Matthew SharpeUniversity of SurreyRutherford backscattering spectrometry of Bi containing III-V semiconductors
Masahiro OkujimaEhime UniversityMolecular beam epitaxy of GaNAsBi nanowires emitting around 1300 nm
Aneirin EllisUniversity of SurreyTemperature and high hydrostatic pressure investigations of epitaxially grown 2.3-μm GaSb lasers on Si
Teng FeiInstitute of SemiconductorsRoom-temperature lasing of quantum cascade lasers grown by metal-organic chemical vapor deposition
Aidas BaltusisUniversity of SurreyRapid minority charge carrier lifetime imaging of semiconductor materials and devices using compressed sensing
Dominic DuffyUniversity of SurreyOptical spectroscopy of NIR III/V-Bi alloys and heterostructures
Aleksey AndreevTyndall National Institute, IrelandNon-radiative auger recombination in GeSn quantum wells: Unusual band-gap dependence
Peter CarringtonLancaster UniversityMid-infrared gallium antimonide photonic devices grown on silicon

Friday 3 September 2021

SpeakerOrganisationTalk title
Mircea GuinaTampere UniversityBroadband light sources at 2-3 μm region based on GaSb/SOI hybrid integration
Lauren ReidUniversity of SouthamptonPIN-ch me!: A Ge-on-SOI photodiode with response up to 3.8 μm
Colin MitchellUniversity of SouthamptonDevelopment of hybrid integration of quantum cascade lasers with germanium waveguides for mid-IR
Michele PaparellaUniversity of Montpellier - Polytechnic University of BariAnalysis of the optical coupling between monolithically integrated GaSb laser diodes and SiNx waveguides
Wei CaoUniversity of SouthamptonMIR silicon modulators in the 2 μm wavelength band

SpeakerOrganisationTalk title
Natalie WheelerUniversity of SouthamptonHollow core optical fibres for mid-infrared beam delivery and applications
Olivier SpitzTélécom ParisApplication of chaos synchronization in injected mid-infrared quantum cascade lasers for private free-space communication
Wioletta TrzpilIES, Univ. Montpellier, CNRS, F-34000 Montpellier, FranceSilicon micro-electromechanical resonator for enhanced photoacoustic gas detection
Florian PilatInstitute of Solid State Electronics, TU WienSpectrally-resolved measurement of the linewidth enhancement factor
Jordan FordyceUniversité de MontpellierSingle mode interband cascade lasers for petrochemical process monitoring

SpeakerOrganisationTalk title
Sergey MorozovIPM RASMid-IR stimulated emission in HgCdTe QW heterostructures with dielectric and "phonon" waveguides
Dao ThangSilicon Austria Labs GmbHResonant metasurface absorbers for infrared spectroscopic sensing
Mauro DavidInstitute of Solid State Electronics, TU WienLWIR dielectric-loaded surface-plasmon-polariton waveguide for optical sensing
Loren PatriciaUniversity of MontpellierPerfect absorbers based on high doped III-V semiconductor for the next generation of plasmonic platforms in the mid-IR
Hon Ki TsangThe Chinese University of Hong KongHybrid integration of 2D materials for photonic devices

SpeakerOrganisationTalk title
Jaime Gomez RivasEindhoven University of TechnologyBroadband THz near-field microscopy of resonant metasurfaces
Nathalie Lander GowerBar Ilan UniversityThe effect of doping in split-well direct-phonon THz quantum-cascade laser structures
Fernando Gonzalez-Posada FloresUniversity of Montpellier - Institute for Electronics and SystemsSemiconductor plasmonic microstructures for THz absorption modulation
Giacomo ScalariETH ZürichHigh temperature THz quantum cascade laser frequency combs
Julien GuiseInstitut d'Electronique et des SystèmesTHz modulator based on optically-tuned metasurfaces
Giacomo ScalariETH ZürichTHz ultrastrong coupling with Landau polaritons: Non-local effects and single meta-atom spectroscopy

Previous conferences to date

Conference number

Year

Location

(Co-)chair

Organisation

1

09/1996

Lancaster UK

Prof. Anthony Krier

Lancaster University

2

03/1998

Prague, Czech Republic

Dr. T. Simecek
Prof. Eduard Hulicius

Czech Academy of Sciences

3

09/1999

RWTH Aachen, Germany

Prof. Klaus Heime

RWTH Aachen

4

04/2001

University of Montpellier, France

Prof. Claude Alibert

University of Montpellier II

5

09/2002

NRL Annapolis, USA

Dr. Jerry Meyer
Dr. Ron Kaspi

Naval Research Laboratory
Air Force Research Laboratory

6

06-07/2004

St. Petersburg, Russia

Prof. Yury Yakovlev

Ioffe Institute

7

09/2005

Lancaster, UK

Prof. Anthony Krier

Lancaster University

8

05/2007

Bad Ischl, Austria

Prof. Gunther Springholz

University of Linz

9

09/2008

Freiburg, Germany

Prof. Joachim Wagner

Fraunhofer Institute for Applied Solid State Physics (IAF)

10

09/2010

Shanghai, China

Prof. Ai-Zhen Li

Chinese Academy of Sciences

11

09/2012

Evanston IL, USA

Prof. Manijeh Razeghi

Northwestern University

12

10/2014

Montpellier, France

Prof. Alexei Baranov
Prof. Eric Tournie

University of Montpellier II

13

09/2016

Beijing, China

Prof. Li He

SITP, CAS

14

10/2018

Flagstaff, AZ, USA

Prof. Yong-Hang Zhang
Prof. Fisher Yu

Arizona State University
University of Arkansas

15

9/2021 (postponed from 09/2020)

Guildford, UK

(online)

Prof. Stephen Sweeney

University of Surrey

MIOMD 2021 schedule

(145.5 KB .PDF)
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