Solution phase synthesis and device fabrication of ZnO nanostructures

Start date

10 October 2010

End date

01 October 2011


Zinc oxide (ZnO) nanostructures have been intensively studied due to their potential applications in diverse areas including optoelectronics and sensing. The potential for technological application of ZnO originates from its unique properties such as the wide direct band gap (~3.37 eV), large excitonic binding energy (60 meV), high mechanical strength, excellent thermal and chemical stability in harsh operating conditions, and intense piezoelectric effect.

ZnO has a rich family of nanostructures and is grown in many methods using different techniques. Controlled growth of the nanostructures is very important for most of the applications like nanogenerators, gas sensors, field effect transistors, cold field emitters, and solar cells.

Aims and objectives

Solution phase synthesis of different ZnO nanostructures is an excellent choice for large-scale synthesis because it is a simple, cost efficient, low temperature process, and friendly to the environment. However, precise control of the nanostructure has been difficult to date – a problem that we wish to address here.

Two solution phase synthesis methods: the hydrothermal and electrodeposition method are examined here to grow ZnO nanostructures. The different ZnO nanostructures are being tested as the active elements in nanoscale transistors and for gas sensors.



Some of our results were presented at the following conferences:

  • Europe’s Semiconductor Conference S2K – 2011 UK
  • 8th International Conference of Nanosciences and Nanotechnologies NN11  2011 Greece.


We provide SEM images of some of the ZnO nanostructures that were produced via solution phase synthesis and an electronic device made of a single nanodisc.