Andrew Prins

Dr Andrew Prins


Research Fellow
+44 (0)1483 689866
05 ATI 01

Academic and research departments

Advanced Technology Institute.

My publications

Publications

Y Ishibashi, T Kobayashi, AD Prins, J Nakahara, MA Lourenco, RM Gwilliam, KP Homewood (2007)Excitation and pressure effects on photoluminescence from dislocation engineered silicon material, In: PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS244(1)pp. 402-406
AD Prins, MK Lewis, ZL Bushell, SJ Sweeney, S Liu, Y-H Zhang (2015)Evidence for a defect level above the conduction band edge of InAs/InAsSb type-II superlattices for applications in efficient infrared photodetectors, In: APPLIED PHYSICS LETTERS106(17)ARTN 1 AMER INST PHYSICS

We report pressure-dependent photoluminescence (PL) experiments under hydrostatic pressures up to 2.16 GPa on a mid-wave infrared InAs/InAs0.86Sb0.14 type-II superlattice (T2SL) structure at different pump laser excitation powers and sample temperatures. The pressure coefficient of the T2SL transition was found to be 93 ± 2 meV·GPa-1. The integrated PL intensity increases with pressure up to 1.9 GPa then quenches rapidly indicating a pressure induced level crossing with the conduction band states at ∼2 GPa. Analysis of the PL intensity as a function of excitation power at 0, 0.42, 1.87, and 2.16 GPa shows a clear change in the dominant photo-generated carrier recombination mechanism from radiative to defect related. From these data, evidence for a defect level situated at 0.18 ± 0.01 eV above the conduction band edge of InAs at ambient pressure is presented. This assumes a pressure-dependent energy shift of -11 meV·GPa-1 for the valence band edge and that the defect level is insensitive to pressure, both of which are supported by an Arrhenius activation energy analysis.

S Buaprathoom, S Pedley, AD Prins, SJ Sweeney, F Berghmans, AG Mignani, P DeMoor (2012)High concentration measurement of mixed particle suspensions using simple multi-angle light scattering system, In: OPTICAL SENSING AND DETECTION II8439ARTN 8pp. ?-? SPIE-INT SOC OPTICAL ENGINEERING