Dr Jae Sung Yun

The design of high-performance perovskite solar cells (PSCs) for indoor applications requires precise interface engineering to optimize charge extraction, particularly under low-light intensity conditions, where excess carrier density is limited. To enhance the charge extraction properties in PSCs, various carbon-based nanomaterials with varying functional groups have been utilized as electron transport layer (ETL) additives to address the issue with limited success. Thereby, in this work, we introduce a plasma-modified graphitic carbon nitride (GCN_PT) as an ETL interface layer additive which is deposited onto the SnO 2 electron transport layer to enhance electron extraction. Plasma modification transforms randomly distributed GCN particles (200–500 nm) into uniformly sized nanoparticles (1–3 nm) while inducing partial graphitization, significantly improving conductivity and charge transport properties. These modifications enable more efficient extraction and transport of photogenerated carriers at the SnO 2 /GCN_PT interface, substantially enhancing short-circuit current density ( J SC ). This improvement is particularly pronounced under low-light indoor conditions, where reduced photon flux limits carrier generation within the perovskite layer. Notably, under 1000 lux indoor white LED illumination, the optimized SnO 2 /GCN_PT interface achieves a power conversion efficiency of approximately 39.80%, demonstrating its potential to advance indoor photovoltaic applications through enhanced J SC and interface optimization.

Most tunnel oxide passivated contact (TOPCon) solar cells are based on a phosphorus-doped (n-type) Si wafer owing to its lifetime stability and defect tolerance compared to a boron-doped (p-type) Si wafer. A gallium-doped (p-type) Si wafer has been adopted due to its better stability under illumination and is now a mainstream for the passivated emitter and rear cell. To use the existing facilities and reduce the cost in the solar industries, it is important to understand the charge carrier transport properties and underlying mechanisms considering p-type TOPCon solar cells as potential candidates for industrial applications. Here, we investigate the correlation between charge transport properties and defect distributions on p+ poly-Si layers/SiOx/two different p-type Si wafers, doped with boron and gallium, respectively. SiOx and p+ poly-Si layers have been fabricated by in-situ low pressure chemical vapor deposition. Then, we perform carrier lifetime measurements using quasi-steady state photoconductance to quantify bulk and surface carrier lifetime. The electrochemical capacitance-voltage method is utilized to investigate the doping levels and profiles by measuring the active boron concentration. Furthermore, Kelvin probe force microscopy measurements are conducted to examine the local photovoltage and defect states on the film surfaces. We also perform current-voltage measurements to analyze the current behavior under both dark and light illumination conditions. Our findings uncover defects dependent on Si wafer types and variations in charge carrier dynamics within p+ poly-Si layers/SiOx/p-type Si wafers. This study enhances our comprehension of charge carrier transport properties in p-type Si wafers, facilitating advancements in photovoltaic performance for p-TOPCon solar cells.

The development of perovskite solar cells (PSCs) with low recombination losses, at low processing temperatures is an area of growing research interest as it enables compatibility with roll-to-roll processing on flexible substrates as well as with tandem solar cells. The inverted or p-i-n device architecture has emerged as the most promising PSC configuration due to the possibility of using low temperature processable organic hole transport layers and more recently, self-assembled monolayers such as, [4-(3,6-Dimethyl-9H-carbazol-9-yl)butyl]phosphonic Acid (Me-4PACz). However, devices incorporating these interlayers suffer from poor wettability of the precursor leading to pin hole formation and poor device yield. Here, we demonstrate the use of alumina nanoparticles (Al2O3 NPs) for pinning the perovskite precursor on Me-4PACz, thereby improving the device yield. While similar wettability enhancements can also be achieved by using poly[(9,9-bis(3’-((N,N-dimethyl)-N-ethylammonium)-propyl)-2,7-fluorene)-alt-2,7-(9,9-dioctylfluorene)]dibromide (PFN-Br), a widely employed surface modifier, the incorporation of Al2O3 NPs results in significantly enhanced Shockley-Read-Hall recombination lifetimes exceeding 3 μs, which is higher than those on films coated directly on Me-4PACz and on PFN-Br modified Me-4PACz. This translates to a champion power conversion efficiency of 19.9% for PSCs fabricated on Me-4PACz modified with Al2O3, which is a ∽20% improvement compared to the champion device fabricated on PFN-Br modified Me-4PACz.

The past 2 years have seen the uniquely rapid emergence of a new class of solar cell based on mixed organic-inorganic halide perovskite. Grain boundaries are present in polycrystalline thin film solar cell, and they play an important role that could be benign or detrimental to solar-cell performance. Here we present efficient charge separation and collection at the grain boundaries measured by KPFM and c-AFM in CH3NH3PbI3 film in a CH3NH3PbI3/TiO2/FTO/glass heterojunction structure. We observe the presence of a potential barrier along the grain boundaries under dark conditions and higher photovoltage along the grain boundaries compare to grain interior under the illumination. Also, c-AFM measurement presents higher short-circuit current collection near grain boundaries, confirming the beneficial roles grain boundaries play in collecting carriers efficiently.

Planar perovskite solar cells obtained by low-temperature solution processing are of great promise, given a high compatibility with flexible substrates and perovskite-based tandem devices, whilst benefitting from relatively simple manufacturing methods. However, ionic defects at surfaces usually cause detrimental carrier recombination, which links to one of dominant losses in device performance, slow transient responses, and notorious hysteresis. Here, it is shown that several different types of ionic defects can be simultaneously passivated by simple inorganic binary alkaline halide salts with their cations and anions. Compared to previous literature reports, this work demonstrates a promising passivation technology for perovskite solar cells. The efficient defect passivation significantly suppresses the recombination at the SnO2/perovskite interface, contributing to an increase in the open-circuit voltage, the fast response of steady-state efficiency, and the elimination of hysteresis. By this strong leveraging of multiple-element passivation, low-temperature-processed, planar-structured perovskite solar cells of 20.5% efficiencies, having negligible hysteresis, are obtained. Moreover, this defect-passivation enhances the stability of solar cells with efficiency beyond 20%, retaining 90% of their initial performance after 30 d. This approach aims at developing the concept of defect engineering, which can be expanded to multiple-element passivation from monoelement counterparts using simple and low-cost inorganic materials.

NiOx is as a promising hole transporting layer (HTL) for perovskite solar cells (PSCs) due to its good stability, large bandgap, and deep valence band. The use of NiOx as a HTL for "inverted" PSC as part of a monolithic silicon/perovskite tandem solar cell is also suitable when the processing temperature is suitably low. Solution-processed NiOx at low temperature for PSCs remains to be improved due to the relatively low short-circuit current density (J(sc)) and fill factor (FF) of reported devices. In this work, the use of Ag-doping is reported for solution-processed NiOx film at 300 degrees C for inverted planar PSCs. We have shown that Ag-doping has no negative effect on the optical transmittance and morphology of the NiOx film and the overlying perovskite film. In addition, Ag-doping is effective in improving conductivity, improving carrier extraction, and enhancing the p-type property of the NiOx film confirmed by electrical characterization, photoluminescence measurements, and ultraviolet photoelectron spectroscopy. These improvements result in better devices based on the ITO/Ag:NiOx/CH3NH3PbI3/PCBM/BCP/Ag structure with improved average FF (from 69% to 75%), enhanced average J(SC) (by 1.2 mA/cm(2) absolute) and enhanced average V-OC (by 29 mV absolute). The average efficiency of these devices is 16.3% while the best device achieves a PCE of 17.3% with negligible hysteresis and a stabilized efficiency of 17.1%. In comparison, devices that use undoped NiOx have an average efficiency of 13.5%. This work demonstrates that silver is a promising doping material for NiOx by a simple solution process for high-performance inverted PSCs and perovskite tandems.

The influence of illumination on the long-term performance of planar structured perovskite solar cells (PSCs) is investigated using fast and spatially resolved luminescence imaging. The authors analyze the effect of illuminated current density-voltage (J-V) and light-soaking measurements on pristine PSCs by providing visual evidence for the spatial inhomogeneous evolution of device performance. Regions that are exposed to light initially produce stronger electroluminescence signals than surrounding unilluminated regions, mainly due to a lower contact resistance and, possibly, higher charge collection efficiency. Over a period of several days, however, these initially illuminated regions appear to degrade more quickly despite the device being stored in a dark, moisture-and oxygen-free environment. Using transmission electron microscopy, this accelerated degradation is attributed to delamination between the perovskite and the titanium dioxide (TiO2) layer. An ion migration mechanism is proposed for this delamination process, which is in accordance with previous current-voltage hysteresis observations. These results provide evidence for the intrinsic instability of CH3NH3PbI3-based devices under illumination and have major implications for the design of PSCs from the standpoint of long-term performance and stability.

In this paper, the effect of phosphorus diffusion and hydrogen passivation on the material properties of laser crystallised silicon on glass is investigated. Photoluminescence imaging, as well as Hall effect and Suns-Voc techniques are applied for the characterisation of laser crystallized silicon thin-film material properties. Hall effect as well as Suns-Voc measurements supports the photoluminescence imaging results; phosphorus diffusion and hydrogen passivation of laser crystallized films improves the overall material quality. Hydrogen passivation is more effective at improving the electronic properties of the laser crystallized films than phosphorus diffusion. Hydrogen passivated samples improved the photoluminescence intensity even further by a factor of 3. In addition, a correlation between photoluminescence intensity and open-circuit voltage is demonstrated: samples with highest photoluminescence intensity (1678 counts/s), gave the highest voltage (530 mV). Hall effect measurement shows a significant improvement in the bulk material, with carrier mobility increasing from 208 cm2/Vs to 488 cm2/Vs.

We present the synthesis of surface-fluorinated, rutile-rich, meso-macroporous TiO2 nanofibers via simple posttreatment in a 5% hydrogen fluoride solution at room temperature and atmospheric pressure. Using various characterization methods, we demonstrate that the anatase phase of the nanofiber can be used as a sacrificial template to ensure appropriate porosity characteristics in the TiO2 nanofibers. From scanning electron microscopy results, it was confirmed that the dimensions of the nanofibers do not change after the hydrogen fluoride post-treatment. However, x-ray diffraction and transmission electron microscopy results confirm that the proportion of the rutile phase increases after hydrogen fluoride post-treatment. After hydrogen fluoride treatment, small pores with diameter below 10 nm almost disappear, and the pore size distribution ranges from mesopore (< 50 nm) to macropore (similar to 100 nm). The x-ray photoelectron spectroscopy results show the disappearance of the Si peak and surface fluorination after the treatment. Further, tests showed that nanofibers treated for 10 h and 20 h have excellent photocatalytic activity compared with pristine nanofibers. We expect hydrogen fluoride treated nanofibers to exhibit superior performance in certain applications where the rutile phase and meso-to macro-sized pores are desirable, such as heterogeneous catalysis and oxygen evolution.

Layered low-dimensional perovskite structures employing bulky organic ammonium cations have shown significant improvement on stability but poorer performance generally compared to their 3D counterparts. Here, a mixed passivation (MP) treatment is reported that uses a mixture of bulky organic ammonium iodide (iso-butylammonium iodide, iBAI) and formammidinium iodide (FAI), enhancing both power conversion efficiency and stability. Through a combination of inactivation of the interfacial trap sites, characterized by photoluminescence measurement, and formation of an interfacial energetic barrier by which ionic transport is reduced, demonstrated by Kelvin probe force microscopy, MP treatment of the perovskite/hole transport layer interface significantly suppresses photocurrent hysteresis. Using this MP treatment, the champion mixed-halide perovskite cell achieves a reverse scan and stabilized power conversion efficiency of 21.7%. Without encapsulation, the devices show excellent moisture stability, sustaining over 87% of the original performance after 38 d storage in ambient environment under 75 +/- 20% relative humidity. This work shows that FAI/iBAI, is a new and promising material combination for passivating perovskite/selective-contact interfaces.

In this work, an inorganic halide perovskite solar cell using a spray-assisted solution-processed CsPbIBr2 film is demonstrated. The process allows sequential solution processing of the CsPbIBr2 film, overcoming the solubility problem of the bromide ion in the precursor solution that would otherwise occur in a single-step solution process. The spraying of CsI in air is demonstrated to be successful, and the annealing of the CsPbIBr2 film in air is also successful in producing a CsPblBr(2) film with an optical band gap of 2.05 eV and is thermally stable at 300 degrees C. The effects of the substrate temperature during spraying and the annealing temperature on film quality and device performance are studied. The substrate temperature during spraying is found to be the most critical parameter. The best-performing device fabricated using these conditions achieves a stabilized conversion efficiency of 6.3% with negligible hysteresis. Cesium metal halide perovskites remain viable alternatives to organic metal halide perovskites as the cesium-containing perovskites can withstand higher temperature.

As stability of perovskite solar cells remains a significant research topic, it is important to be able to predict the long-term stability of any new kinds of perovskite solar cells when new perovskite absorber materials or transport layers or new cell structures are being demonstrated. This work reports a reliable method of determining degradation rate which is resulted from thermal stress. By incorporating three kinds of accelerated tests, the activation energy for photo-thermally driven degradation processes of perovskites solar cells was determined, which is then used to predict its long-term stability using an Arrhenius equation. In addition, thermal stability of CH3NH3PbI3, HC(NH2)(2)PbI3, PTAA (poly[bis(4-phenyl)(2,4,6-trimethyl phenyl)amine]) and Spiro-OMeTAD (2,2',7,7'-Tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene) are studied. The thermal stability of a planar HC(NH2)(2)PbI3/PTAA device is better than a planar HC(NH2)(2)PbI3/Spiro-OMeTAD device which in turn is better than a planar CH3NH3PbI3/Spiro-OMeTAD device due to better thermal stability of HC(NH2)(2)PbI3 and PTAA. It is predicted that a planar HC(NH2)(2)PbI3/PTAA device can have a lifetime of more than 3 years (or 1.5 years) at room temperature if 50% (or 25%) drop in power output can be tolerated. While these lifetimes are specific to perovskite material chosen, preparation method and solar cell design, the lifetime prediction method reported here can be verified experimentally. Therefore, the lifetime calculation method developed in this work is a quick and useful tool for determining the relative stability of a perovskite device especially when comparing the merits of different cell structure designs.

HC(NH2)(2)PbI3 perovskite solar cells have emerged as a promising alternative to CH3NH3PbI3 perovskite solar cells due to their better thermal stability and lower bandgap. In this work, we have demonstrated a reliable fabrication technique for HC(NH2)(2)PbI3 planar perovskite solar cells by controlling nucleation and crystallization processes of the perovskite layer through a combination of gas-assisted spin coating and the addition of HI additive in the perovskite precursor. A narrow distribution of power conversion efficiencies (PCEs) can be achieved with an average of 13% with negligible hysteresis when measured at a scanning rate of 0.1 V/s. The best performance device has a PCE of 16.0%. It is shown that by using optimized conditions we can consistently form dense, uniform, pinhole-free good crystalline, lead-iodide-impurities-free HC(NH2)(2)PbI3 film that has been comprehensively characterized by scanning electron microscopy, X-ray diffraction, Kelvin probe force microscopy, photoluminescence, and electroluminescence in this work.

The critical role of grain boundaries for (CH(NH2)2PbI3)0.85(CH3NH3PbBr3)0.15 perovskite solar cells studied by Kelvin probe force microscopy under bias voltage and illumination is reported. Ion migration is enhanced at the grain boundaries. Under illumination, the light‐induced potential causes ion migration leading to a rearranged ion distribution. Such a distribution favors photogenerated charge‐carrier collection at the grain boundaries.

Halide perovskite solar cells have achieved impressive efficiencies above 26%, making them a promising technology for the future of solar energy. However, the current fabrication methods rely on highly toxic solvents, which pose significant safety and environmental hazards. It is crucial to develop greener and safer alternatives to these solvents to facilitate the commercialization of perovskite solar cells. In this review, the safety and hazard evaluations of conventional toxic solvents and discuss the selection criteria for solvents that affect the morphology, nucleation, crystallization, and performance of perovskite solar cells. Furthermore, recent research into green solvent alternatives is evaluated and their properties are compared to those of commonly used solvents. In this review, fundamental insights are provided into the progress and challenges of green-solution processing of perovskite solar cells, which will be essential for advancing this technology toward commercialization. In this review, the transition to green solvent systems for halide perovskite solar cells, addressing the toxicity of conventional solvents, is explored. Herein, the selection criteria for solvents are evaluated and recent advancements in green solvent research are highlighted, aiming to balance environmental safety with high efficiency and stability of solar cells, ultimately facilitating their commercial viability.image (c) 2024 WILEY-VCH GmbH

The ultrathin SnO2 film, prepared by the successive ionic layer adsorption and reaction (SILAR) method, was applied between p-type Cu2ZnSnS4 (CZTS) and n-type CdS layers to passivate the interface as well as the top section of CZTS grain boundaries. With the aid of this layer, electric properties have been significantly improved. The device efficiency improved from 6.82% to 8.47%, which is mainly contributed by the boost of fill factor (FF) and open circuit voltage (V-oc). However, the further increase of SnO2 thickness results in decreased J(sc) and FE Kelvin Probe Force Microscopy (KPFM) unveils the passivation of grain boundaries (GBs) of CZTS with the SnO2 coating. This work shows a new insight into the heterointerface and GBs passivation for high efficiency CZTS solar cells.

Diode laser crystallization was performed silicon thin film on glass. Large linear grains along the laser scanning direction were formed when the laser scanning speed of 150-1000 mm/min was used. First order square 3 twin boundaries were found to be dominating grain boundaries. Pole figure measurement showed very uniform (100) texture can be formed when SiOx layer capping layer was used. Promising bulk resistivity of the as-crystallized films was resulted. Emitter was formed using spin on diffusion and subsequent RTP. Suns V-oc results after emitter formation exhibited n=1 recombination. Hydrogen plasma passivation effectively passivated grain boundaries.

The crystallization of Si thin-film on glass using continuous-wave diode laser is performed. The effect of various processing parameters including laser power density and scanning speed is investigated in respect to microstructure and crystallographic orientation. Optimal laser power as per scanning speed is required in order to completely melt the entire Si film. When scan speed of 15-100 cm/min is used, large linear grains are formed along the laser scan direction. Laser scan speed over 100 cm/min forms relatively smaller grains that are titled away from the scan direction. Two diode model fitting of Suns-V-oc results have shown that solar cells crystallized with scan speed over 100 cm/min are limited by grain boundary recombination (n = 2). EBSD micrograph shows that the most dominant misorientation angle is 60 degrees. Also, there were regions containing high density of twin boundaries up to similar to 1.2 x 10(-8)/cm(2). SiOx capping layer is found to be effective for reducing the required laser power density, as well as changing preferred orientation of the film from < 110 > to < 100 > in surface normal direction. Cracks are always formed during the crystallization process and found to be reducing solar cell performance significantly.

For the first time, we report large-area (16 cm2) independently certified efficient single perovskite solar cells (PSCs) by overcoming two challenges associated with large-area perovskite solar cells. The first challenge of realizing a homogeneous and densely packed perovskite film over a large area is overcome by using an antisolvent spraying process. The second challenge of removing the series resistance limitation of transparent conductor is overcome by incorporating a metal grid designed using a semidistributed diode model. A 16 cm2 perovskite solar device at the cell level rather than at the module level is demonstrated using the modified solution process in conjunction with the use of a metal grid. The cell is independently certified to be 12.1% efficient. This work paves the way toward highly efficient and large perovskite cells without single-junction perovskite solar cells and silicon–perovskite tandems.

We apply gas quenching to fabricate rubidium (Rb) incorporated perovskite films for high-efficiency perovskite solar cells achieving 20% power conversion efficiency on a 65 mm(2) device. Both double-cation and triple-cation perovskites containing a combination of methylammonium, formamidinium, cesium, and Rb have been investigated. It is found that Rb is not fully embedded in the perovskite lattice. However, a small incorporation of Rb leads to an improvement in the photovoltaic performance of the corresponding devices for both double-cation and triple-cation perovskite systems.

Organic-inorganic metal halide perovskites have gained considerable attention for next-generation photovoltaic cells due to rapid improvement in power conversion efficiencies. However, fundamental understanding of underlying mechanisms related to light-and bias-induced effects at the nanoscale is still required. Here, structural variations of the perovskites induced by light and bias are systematically investigated using scanning probe microscopy techniques. We show that periodically striped ferroelastic domains, spacing between 40 to 350 nm, exist within grains and can be modulated significantly under illumination as well as by electric bias. Williamson-Hall analysis of X-ray diffraction results shows that strain disorder is induced by these applied external stimuli. We show evidence that the structural emergence of domains can provide transfer pathways for holes to a hole transport layer with positive bias. Our findings point to potential origins of I-V hysteresis in halide perovskite solar cells.

The microstructural properties of polycrystalline silicon films obtained by either solid-phase crystallisation (SPC) or laser-induced liquid-phase crystallisation (LPC) were investigated by transmission electron microscopy (TEM). In SPC films, the most common intra-grain defects are dislocations with the density as high as 1E10 cm(-2) determined from cross-sectional weak-beam dark-field images. The highest dislocation density in LPC film is at least two orders of magnitude lower than the SPC film, 1E8 cm(-2) and typically it is below 1E6 cm(-2). The most common defect type in LPC films is twin boundaries and other junctions of different coincidence site lattice (CSL) boundaries. Such differences in the material structural properties result in far superior electrical performance of solar cells made of LPC films, such as mobility up to 400 cm(2) V-1 s(-1), similar to c-Si wafers, and the higher open-circuit voltage up to 585 my. (C) 2014 Elsevier B.V. All rights reserved.

An insight into the analogies, state-of-the-art technologies, concepts, and prospects under the umbrella of perovskite materials (both inorganic-organic hybrid halide perovskites and ferroelectric perovskites) for future multifunctional energy conversion and storage devices is provided. Often, these are considered entirely different branches of research; however, considering them simultaneously and holistically can provide several new opportunities. Recent advancements have highlighted the potential of hybrid perovskites for high-efficiency solar cells. The intrinsic polar properties of these materials, including the potential for ferroelectricity, provide additional possibilities for simultaneously exploiting several energy conversion mechanisms such as the piezoelectric, pyroelectric, and thermoelectric effect and electrical energy storage. The presence of these phenomena can support the performance of perovskite solar cells. The energy conversion using these effects (piezo-, pyro-, and thermoelectric effect) can also be enhanced by a change in the light intensity. Thus, there lies a range of possibilities for tuning the structural, electronic, optical, and magnetic properties of perovskites to simultaneously harvest energy using more than one mechanism to realize an improved efficiency. This requires a basic understanding of concepts, mechanisms, corresponding material properties, and the underlying physics involved with these effects.

Halide perovskites such as methylammonium lead iodide (MAPbI3) currently attract considerable attention because of their excellent optoelectronic properties and performance in solar cell devices. Despite tremendous research efforts to elucidate their fundamental properties, ion migration with the presence of ionic defects is still not fully understood. Here, various types of ionic defects for specific (100) and (112) lattice facets in single-crystal MAPbI3 have been investigated systematically. Our measurements reveal significant anisotropic properties. Photoluminescence (PL) and electrical transport measurements show that the (100) facet has higher PL intensity and over 1 order lower trap density compared to that of the (112) facet. We find that the facet-dependent variations of contact potential difference measured with Kelvin probe force microscopy under different bias voltages and light illuminations provide insights into different types of ionic defects on the surface of MAPbI3 single crystals. We also observe a completely different ion migration behavior on specific crystal facets through nanoscale scanning probe microscopy investigations. Our results indicate that the (100) facet exhibits an n-type behavior dominated with I– vacancies, whereas the (112) facet exhibits a p-type behavior with MA+ or Pb2+ vacancies. The findings on the facet-dependent configuration of ionic defects provide deeper understanding on facet-dependent optoelectronic properties in single-crystal MAPbI3.

Beneficial effects are demonstrated by PbI2 incorporated into perovskite materials as a light absorber in solar cells. The PbI2 distributed into the perovskite layers leads to reduced hysteresis and ionic migration, and enables the fabrication of remarkably improved solar cells with a certified power conversion efficiency of 19.75% under air‐mass 1.5 global (AM 1.5G) illumination of 100 mW cm−2 intensity.

The sensitivity of organic-inorganic perovskites to environmental factors remains a major barrier for these materials to become commercially viable for photovoltaic applications. In this work, the degradation of formamidinium lead iodide (FAPbI(3)) perovskite in a moist environment is systematically investigated. It is shown that the level of relative humidity (RH) is important for the onset of degradation processes. Below 30% RH, the black phase of the FAPbI(3) perovskite shows excellent phase stability over 90 d. Once the RH reaches 50%, degradation of the FAPbI(3) perovskite occurs rapidly. Results from a Kelvin probe force microscopy study reveal that the formation of nonperovskite phases initiates at the grain boundaries and the phase transition proceeds toward the grain interiors. Also, ion migration along the grain boundaries is greatly enhanced upon degradation. A post-thermal treatment (PTT) that removes chemical residues at the grain boundaries which effectively slows the degradation process is developed. Finally, it is demonstrated that the PTT process improves the performance and stability of the final device.

We identify nanoscale spatial distribution of PbI2 on the (FAPbI(3))(0.85)(MAPbBr(3))(0.15) perovskite thin film and investigate the local passivation effect using confocal based optical microscopy of steady state and time-resolved photoluminescence (PL). Different from a typical scanning electron microscope (SEM) morphology study, confocal based PL spectroscopy and microscopy allow researchers to map the morphologies of both perovskite and PbI2 grains simultaneously, by selectively detecting their characteristic fluorescent bands using band-pass filters. In this work, we compare the perovskite samples without and with excess PbI2 incorporation and unambiguously reveal PbI2 distribution for the PbI2-rich sample. In addition, using the nanoscale time-resolved PL technique we show that the PbI2-rich regions exhibit longer lifetime due to suppressed defect trapping, compared to the PbI2-poor regions. The measurement on the PbI2-rich sample indicates that the passivation effect of PbI2 in perovskite film is effective, especially in localized regions. Hence, this finding is important for further improvement of the solar cells by considering the strategy of excess PbI2 incorporation.

The effects of the deposition temperature on the microstructure, crystallographic orientation, and electrical properties of a 10-mu m thick evaporated Si thin-film deposited on glass and crystallized using a diode laser, are investigated. The crystallization of the Si thin-film is initiated at a deposition temperature between 450 and 550 degrees C, and the predominant (110) orientation in the normal direction is found. Pole figure maps confirm that all films have a fiber texture and that it becomes stronger with increasing deposition temperature. Diode laser crystallization is performed, resulting in the formation of lateral grains along the laser scan direction. The laser power required to form lateral grains is higher in case of films deposited below 450 degrees C for all scan speeds. Pole figure maps show 75% occupancies of the (110) orientation in the normal direction when the laser crystallized film is deposited above 550 degrees C. A higher density of grain boundaries is obtained when the laser crystallized film is deposited below 450 degrees C, which limits the solar cell performance by n = 2 recombination, and a performance degradation is expected due to severe shunting. (C) 2014 AIP Publishing LLC.

Electric field induced effects have attracted considerable interest in the field of perovskite materials and solar cells because they are closely related to the performance and stability. In this work, we visualize and characterize the electric field induced effects in laterally structured Au/FTO/CH3NH3PbI3/FTO/Au samples via photoluminescence optical microscopy, in situ time-correlated single photon counting measurements and scanning electron microscopy. Both irreversible and reversible responses are observed under different electric fields and humidity conditions. Firstly, the irreversible response near both electrodes includes permanent photoluminescence quenching and morphology changes. Such changes are observed when the applied field is larger than a nominal value, which depends on the humidity conditions. The irreversible change is a result of perovskite decomposition, which is indicated by the appearance of a PbI2 peak in the localized photoluminescence spectrum. We show that this moisture-assisted electric field induced decomposition can be minimized by encapsulation. Secondly, a reversible response near the anode observed under a weak electric field, which is characterized by photoluminescence quenching and a reduced lifetime with negligible morphology change, is attributed to the migration and accumulation of mobile ions. The dominant mobile species is ascribed to be iodide ions by mobility calculations. Thirdly, a slowdown of the irreversible response, i.e., decomposition within the bulk of the perovskite and away from the electrodes, is observed. This is because of the negative feedback between perovskite decomposition and ion accumulation, which offsets the field induced effect in the perovskite bulk. This work demonstrates the effective use of photoluminescence microscopy revealing different mechanisms behind the observed instability of perovskite devices under different bias and moisture conditions that cause either reversible or irreversible changes.

In this work, crystallographic orientation of polycrystalline silicon films on glass formed by continuous wave diode laser crystallization was studied. Most of the grain boundaries were coincidence lattice Sigma 3 twin boundaries and other types of boundaries such as, Sigma 6, Sigma 9, and Sigma 21 were also frequently observed. The highest photoluminescence signal and mobility were observed for a grain with (100) orientation in the normal direction. X-ray diffraction results showed the highest occupancies between 41 and 70% along the (110) orientation. However, the highest occupancies changed to (100) orientation when a 100 nm thick SiOx capping layer was applied. Suns-Voc measurement and photoluminescence showed that higher solar cell performance is obtained from the cell crystallized with the capping layer, which is suspected from increased occupancies of (100) orientation. (C) 2016 Elsevier B.V. All rights reserved.

The paper presents a review of major features of the crystalline silicon on glass (CSG) technology, its achievements, limitations and challenges, and latest developments. CSG cells are fabricated by solid-state crystallisation (SPC) of 1.5–3.5µm thick precursor diodes prepared by PECVD or ebeam evaporation followed by thermal annealing, hydrogen passivation and metallisation. The highest efficiency of 10.4% was demonstrated on a PECVD minimodule on textured borosilicate glass. The best performing ebeam-evaporated cells on planar glass reached 8.6% efficiency. CSG cells were also produced on low-cost soda-lime glass with 8.1% and 7.1% efficiencies on PECVD and ebeam material respectively. The performance of SPC CSG cells is limited to below 11% because high defect density in SPC material limits VOC and 1.5–3.5µm cell thickness limits JSC. A breakthrough came about when thicker poly-Si films with low defect density on glass were prepared by liquid-phase crystallisation (Amkreutz, 2011) leading to development of the next generation, liquid-phase crystallised silicon on glass (LPCSG) solar cells. The best performing LPCSG cells are made by line-focus laser crystallisation of 10µm thick ebeam silicon films on dielectric layer coated borosilicate glass. High material quality is confirmed by low defect density observed in TEM images, high carrier mobilities, and minority carrier lifetime longer than 260ns. An intermediate dielectric layer can be SiCx, SiOx, SiNx or their combination and its properties are crucial for cell fabrication and performance. Dopants are introduced into the LPCSG cell absorber either during film deposition or diffused from doped intermediate layer during crystallisation. Light-trapping texture is formed on the exposed silicon surface by wet etching. A cell emitter is created by diffusion from spin-on-dopant source. Cell metallisation is based on point contacts between Al and cell emitter and absorber accessed through vias etched through cell layers to different depths. LPCSG cells outperformed CSG cells, with record VOC of 585mV and efficiency of 11.7%. Efficiencies above 13% are achievable by improving light-coupling and contacting. •Efficiency of solid-phase crystallised Si on glass (CSG) solar cells prepared by low rate PECVD peaked at 10.4%.•CSG cell performance is limited due to high defect density in SPC Si films.•A few versatile and potent processes and techniques for solar cell fabrication have been developed within the CSG technology.•Liquid-phase crystallised Si on glass (LPCSG) films with low defect density and high electronic quality are obtained by diode laser crystallisation.•Solar cells fabricated from LPCSG films using the CSG technology have achieved 585mV open circuit voltage and 11.7% efficiency.

Various characterization methods are implemented to investigate the fundamental properties of a Cu2ZnSnS4 (CZTS) solar cell. The chemical distribution across the CZTS grain boundaries, the surface potential of CZTS absorber, the minority lifetime, the carrier collection length, diode ideality factor, dark saturation current, and series resistance are revealed in the characterization measurement. The short minority lifetime, high defect density, and large series resistance are confirmed and need to be addressed in the future work for further efficiency improvement. (C) 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

In this research, a new route of surface passivation is reported by introducing hydrogen from the atomic layer deposited (ALD) Al2O3 layer into pure sulfide Cu2ZnSnS4 (CZTS) solar cells. Different amounts of hydrogen are incorporated into the Cu2ZnSnS4/CdS interface through controlling the thickness of the ALD-Al2O3 layer. The device with three cycles of ALD-Al2O3 yields the highest efficiency of 8.08% (without antireflection coating) with improved open-circuit voltage of up to 70 mV. With closer examination on the passivation route of ALD-Al2O3, it is revealed by the surface chemisty study that the Al2O3 can be etched away by ammonium hydroxide in the CdS buffer deposition process. Instead, the hydrogen is detected within a shallow depth from the CZTS surface, and makes a significant difference in the measured distribution of contact potential difference and device performance. This may be interpreted by the effect of hydrogen passivation of the CZTS surface by curing dangling bonds at the surface of CZTS grains. This work may provide a new direction of further improving the performance of kesterite solar cells.

Herein, we report the dual functionality of a single n-type gallium nitride (n-GaN) layer as an electron transporter and transparent conductor, which has applications in reusable organic solar cells. After silicon doping with an optimized electron concentration, thin-film layer of GaN showed exceptional electrical properties including charge carrier mobility of 161 cm(2) V(-1)s(-1), electrical conductivity of 1.4x10(6) S cm(-1), and sheet resistance of 11.1 Omega cm(-2). Organic solar cells based on n-GaN exhibited power conversion efficiency comparable to those based on a conventional ITO/ZnO bilayered cathode. Furthermore, the n-GaN substrates exhibited reusability; due to excellent chemical stability of n-GaN, the reconstructed organic solar cells maintained their initial performance after the substrates were recycled. We suggest a new type of reusable n-GaN cathode layer featuring an integrated electron transporting layer and transparent electrode.

In this study, we provide insights into planar structure methylammonium lead triiodide (MAPbI(3)) perovskite solar cells (PSCs) using electroluminescence and photoluminescence imaging techniques. We demonstrate the strength of these techniques in screening relatively large area PSCs, correlating the solar cell electrical parameters to the images and visualizing the features which contribute to the variation of the parameters extracted from current density-voltage characterizations. It is further used to investigate one of the major concerns about perovskite solar cells, their long term stability and aging. Upon storage under dark in dry glovebox condition for more than two months, the major parameter found to have deteriorated in electrical performance measurements was the fill factor; this was elucidated via electroluminescence image comparisons which revealed that the contacts' quality degrades. Interestingly, by deploying electroluminescence imaging, the significance of having a pin-hole free active layer is demonstrated. Pin-holes can grow over time and can cause degradation of the active layer surrounding them. Published by AIP Publishing.

In this work, we report the benefits of incorporating phenethylammonium cation (PEA(+)) into (HC(NH2)(2)PbI3)(0.85)(CH3NH3PbBr3)(0.15) perovskite for the first time. After adding small amounts of PEA cation (< 10%), the perovskite film morphology is changed but, most importantly, grain boundaries are passivated. This is supported by Kelvin Probe Force Microscopy (KPFM). The passivation results in the increase in photoluminescence intensity and carrier lifetimes of test structures and open-circuit voltages (V-OC) of the devices as long as the addition of PEA(+) is

Environmentally friendly earth-abundant Cd-free Cu2ZnSnS4 (CZTS) solar cells have recently achieved increasing power conversion efficiency by using ZnSnO as the buffer layer. However, the large open circuit voltage (V-oc) deficit remains the key concern. Here, we report a Cd-free CZTS solar cell that exhibits an energy conversion efficiency of 10.2% resulting from the application of an aluminium oxide (Al2O3) passivation layer prepared by atomic layer deposition (ALD). We found that the application of full ALD cycles as well as trimethylaluminum (TMA) exposures resulted in a significant increase in V-oc and relate this to the properties of the CZTS interface. Both processes facilitate the formation of a thicker Cu-deficient nanolayer with a higher concentration of Na and O, forming a homogeneous passivation layer across the CZTS surface. This nanolayer reduces the local potential fluctuation of band edges and leads to the widened electrical band gap and suppressed defects recombination at the heterojunction interface, thus improvement in V-oc and device performance. The ability of nanolayers to alter the atomic composition in the near surface region of compound semiconductors might be beneficial for a wider range of semiconductor devices.

While interfacial and grain-boundary passivation presently attract enormous research interest for perovskite solar cells (PSCs), the improvement of Cs-(FAPbI(3))(X)(MAPbBr(3))(Y) bulk quality still lacks systematical study, especially for constructing polycrystalline layers in planar configurations. Here, a DMSO-molecule-process for improving the quality of Cs-(FAPbI(3))(0.85)(MAPbBr(3))(0.15) is developed, where the molar ratio of precursors, the kind of anti-solvents, and speed-time profiles are found critical. The optimized treatment significantly enhanced the crystal orientation, grain size, surface roughness, photo-response, carrier lifetime, and contact potential difference of absorbers. Cs-(FAPbI(3))(0.85)(MAPbBr(3))(0.15) absorbers also present superior charge transport, as well as reduced carrier recombination and decreased trap densities via DMSO-molecule-control, enabling performance improvement on both long-term stability and photovoltaic parameters of 1cm(2) PSCs. Champion planar cells demonstrated a power conversion efficiency (PCE) of 21.07% (0.159cm(2)) and PCE of 19.4% (1cm(2)) with negligible hysteresis. Moreover, 1cm(2) devices retained 90% of initial PCE after aging 50 days in ambient air.

For the fabrication of perovskite solar cells (PSCs) using a solution process, it is essential to understand the characteristics of the perovskite precursor solution to achieve high performance and reproducibility. The colloids (iodoplumbates) in the perovskite precursors under various conditions were investigated by UV–visible absorption, dynamic light scattering, photoluminescence, and total internal reflection fluorescence microscopy techniques. Their local structure was examined by in situ X-ray absorption fine structure studies. Perovskite thin films on a substrate with precursor solutions were characterized by transmission electron microscopy, X-ray diffraction analysis, space-charge-limited current, and Kelvin probe force microscopy. The colloidal properties of the perovskite precursor solutions were found to be directly correlated with the defect concentration and crystallinity of the perovskite film. This work provides guidelines for controlling perovskite films by varying the precursor solution, making it possible to use colloid-engineered lead halide perovskite layers to fabricate efficient PSCs.

With the growing need for cost-effective and sustainable Internet of things (IoT) technologies, kesterite-based solar cells are gaining popularity. We report the fabrication of an efficient CZTSSe absorber layer with improved V oc loss and its possible use in indoor photovoltaic applications. The double cation incorporation (co-doping) approach is employed with Ag and Ge to achieve this. The devices fabricated and tested under standard illumination (1 sun) and low light intensity conditions showed enhanced device performances and lower V oc losses after co-doping. Under indoor light conditions, V oc of 290 mV with white LED (WLED) and 310 mV with fluorescent lamp (FL-4000K) was achieved at the lowest intensity of 400 lux, while a value exceeding 350 mV was obtained at 1200 lux with FL-4000K for the CZTSSe:Ag–Ge device. V oc recoveries of >60% under all intensity conditions and >70% at 1200 lux with both WLED and FL-4000K were achieved. Moreover, the CZTSSe:Ag–Ge device showed efficiencies of 4.95% and 5.85% under WLED and FL-4000K at 1200 lux, respectively. The prototype device also demonstrated successful test results under indoor conditions. These achievements are attributed to the enhanced carrier density, reduced density of defects, and low carrier recombinations.

Grain boundaries (GBs) in polycrystalline halide perovskite solar cells play a significant role in not only device performance but also stability. The first section of this chapter (Section ) provides fundamental aspects of grain boundaries. In the following section (Section ), both positive and negative roles of GBs in the device performance of organic‐inorganic halide perovskite (OIHP) solar cells are discussed along with various engineering approaches that tune the GB properties. In Section , enhanced ion transport through GBs is depicted that causes the I–V hysteresis in OIHP solar cells. Finally, in Section , moisture penetration along the GBs is illustrated that ultimately degrade the entire structure and deteriorate the perovskite solar cell stability.

[Display omitted] •We investigated interface dipole effects on indoor perovskite solar cells.•QDPPO enabled homogeneous charge distribution and suppressed recombination.•Perovskite solar cells based on QDPPO exhibited iPCE of 36.90% at 800 lux light.•Mini-modules based on QDPPO generated power output of 2.4 mW at 1,000 lux light. Indoor-light harvesting-technology based on perovskite solar cells have attracted significant attention owing to their promising photovoltaic properties as indoor power generators. We investigated the effect of interfacial dipoles on the performance of perovskite solar cells in low-intensity indoor light environments. Interfacial dipoles were controlled by inserting different polar layers with different molecular dipole moments (BCP, QPPO and QDPPO) on top of electron transport layers (ETLs). Significantly improved uniformity of interfacial dipoles, in the QDPPO layer, effectively reduced charge recombination and enabled persistent fill factors (FF’s) under low-intensity light environments. Perovskite solar cells based on QDPPO exhibited indoor power density (iPD) and indoor power conversion efficiency (iPCE) of 65.63 μW/cm2 and 27.49 % under 800 lux LED, which were further enhanced up to 88.09 μW/cm2 and 36.90 % by employing additional passivation layer under 800 lux LED. Finally, using QDPPO, we successfully demonstrated perovskite photovoltaic mini-modules with a high power output of 2.4 mW under a 1,000 lux halogen, which can be applied in Internet-of-Things sensors under indoor light conditions.

Halide perovskite-based photovoltaic (PV) devices have recently emerged for low energy consumption electronic devices such as Internet of Things (IoT). In this work, an effective strategy to form a hole-selective layer using phenethylammonium iodide (PEAI) salt is presented that demonstrates unprecedently high open-circuit voltage of 0.9 V with 18 mu W cm(-2) under 200 lux (cool white light-emitting diodes). An appropriate post-deposited amount of PEAI (2 mg) strongly interacts with the perovskite surface forming a conformal coating of PEAI on the perovskite film surface, which improves the crystallinity and absorption of the film. Here, Kelvin probe force microscopy results indicate the diminished potential difference across the grain boundaries and grain interiors after the PEAI deposition, constructing an electrically and chemically homogeneous surface. Also, the surface becomes more p-type with a downshift of a valence band maximum, confirmed by ultraviolet photoelectron spectroscopy measurement, facilitating the transport of holes to the hole transport layer (HTL). The hole-selective layer-deposited devices exhibit reduced hysteresis in light current density-voltage curves and maintain steadily high fill factor across the different light intensities (200-1000 lux). This work highlights the importance of the HTL/perovskite interface that prepares the indoor halide perovskite PV devices for powering IoT device.

This report addresses indium oxide doped with titanium and tantulum with high near-infrared transparency to potentially replace the conventional indium tin oxide transparent electrode used in semitransparent perovskite devices and top cells of tandem devices. The high near-infrared transparency of this electrode is possibly explained by the lower carrier concentration, suggesting less defect sites that may sacrifice its optical transparency. Incorporating this transparent electrode into semitransparent perovskite solar cells for both the top and bottom electrodes improved the device performance through possible reduction of interfacial defect sites and modification in energy alignment. With this indium oxide-based semitransparent perovskite top cell, we also demonstrated four-terminal perovskite–silicon tandem configurations with improved photocurrent response in the bottom silicon cell.

In this study, we prepared three kesterite thin-film solar cells, Cu2ZnSnSe4(CZTSe), Cu2ZnSn(S,Se)(4)(CZTSSe), and Cu2ZnSnS4(CZTS), and based on low light intensity measurements, examined the possibility of using kesterite devices for indoor applications. Interestingly, all the prepared cells exhibited nearly the same device efficiency under standard test conditions of 1 sun; however, under illumination with low-intensity halogen and LED lamps (200-400 lux), the power output of CZTSSe was twice that of CZTSe and CZTS. CZTSe (58%) and CZTS (37%) showed relatively larger open-circuit voltage drops than CZTSSe (29%). Suns-V(oc)measurements revealed that the ideality factor of CZTS and CZTSe increased as the light intensity decreased, which indicates severe recombination caused by deep-level defects at low light intensities. Furthermore, admittance spectroscopy measurements revealed that CZTSe and CZTS have deep trap energy levels, whereas CZTSSe has comparatively shallower trap energy levels; this validates the rapid open-circuit voltage drop under low light intensity conditions. Kelvin probe force microscopy measurements showed that CZTSSe exhibited a higher photovoltage (86 mV) under illumination at 400 lux compared with that under dark conditions. In addition, our results indicated that the CZTSSe sample showed relatively much higher charge separation at GBs (grain boundaries) owing to the downward band bending at the GBs. The findings revealed that for deeper energy levels, the open-circuit voltage reduction was faster; in addition, an absorber layer with shallower defects and efficient charge separation at the GBs can induce high power conversion efficiency under low-light conditions.

Despite over a decade of research on metal halide perovskites (MHPs) in the context of photovoltaic applications, understanding the nature of electronic and ionic processes associated with current-voltage (I-V) hysteretic behavior has been limited. Here, we explore the hysteretic behavior in (FAPbI(3))(0.85)(MAPbBr(3))(0.15) perovskite devices with lateral Cr electrodes by applying first order reversal curve (FORC) bias waveform in I-V, Kelvin probe force microscopy (KPFM) measurements, and in-situ chemical imaging by time-resolved time-of-flight secondary ion mass spectrometry (tr-ToF-SIMS). In dark, we reveal pronounced hysteretic behaviors of charge dynamics in the off-field by probing time-dependent current and contact potential difference (CPD). Under illumination, transient and hysteretic behaviors are significantly reduced. The tr-ToF-SIMS results reveal that the hysteretic behaviors are strongly associated with accumulation of Br- ions at the interfaces. In addition, the low mobility MA(+) ions result in transient behavior and contribute to the hysteretic phenomena. It was shown that Pb2+ ions can be reduced at the interfaces due to electrochemical reactions with the electrode in the presence of charge injection and photogenerated charges. These hysteretic behaviors associated with charge dynamics, ion migration, and interfacial electrochemical reaction are critical to further improve the performance and stability of MHPs photovoltaics and optoelectronics.

Mixed-halide perovskites (MHPs) have attracted attention as suitable wide-band-gap candidate materials for tandem applications owing to their facile band-gap tuning. However, when smaller bromide ions are incorporated into iodides to tune the band gap, photoinduced halide segregation occurs, which leads to voltage deficit and photoinstability. Here, we propose an original post-hot pressing (PHP) treatment that suppresses halide segregation in MHPs with a band gap of 2.0 eV. The PHP treatment reconstructs open-structured grain boundaries (GBs) as compact GBs through constrained grain growth in the in-plane direction, resulting in the inhibition of defect-mediated ion migration in GBs. The PHP-treated wide-band-gap (2.0 eV) MHP solar cells showed a high efficiency of over 11%, achieving an open-circuit voltage (V oc) of 1.35 V and improving the maintenance of the initial efficiency under the working condition at AM 1.5G. The results reveal that the management of GBs is necessary to secure the stability of wide-band-gap MHP devices in terms of halide segregation.

Recent efficiency advancements in kesterites have reinforced the use of Cu2ZnSn(S,Se)(4) (CZTSSe) in indoor photovoltaic applications. However, the performance of kesterites under low light intensity conditions is mainly hindered by deep-level defects. In this study, a strategic approach of silver (Ag) and germanium (Ge) cation substitution to cure these defects are employed. The Ag-doped CZTSSe (CZTSSe:Ag) and Ge-doped (CZTSSe:Ge) samples experimentally demonstrated a significant improvement in kesterite device performance under all intensities of LED and white fluorescent lamp conditions are prepared. Interestingly, the CZTSSe:Ag device exhibited the highest performance levels, i.e., 1.2-1.5 and 2.5-3 times better than those of Ge-doped CZTSSe:Ge and undoped CZTSSe, respectively. This improved device performance is mainly attributed to the reduced energy level of deep-level defects in CZTSSe:Ag. Moreover, these defects assisted in the generation of a larger potential difference between the grain boundary and grain interior in the CZTSSe:Ag sample, attracting minority carriers near the grain boundary. Consequently, the improved carrier separation process reduced the carrier recombination losses and enhanced the power output under low light intensity conditions. This Ag and Ge cation substitution in kesterite is found to be an effective approach to improve the device performance under low light intensity conditions.

Incorporating homogeneously dispersed metal single atoms or nanoclusters into bulk matrix can produce functional materials for electrochemical catalysis, energy storage, and electronic devices. However, the instability of single metal atoms (or clusters) against agglomeration and thus loss of active surfaces during high-temperature treatment or reactions remains a major challenge. Here, we report the effect of spatial confinement on suppressing migration and coalescence of metal atoms/clusters in solid films made of stacked and/or overlapping (‘reduced’) graphene oxide, resulting in increased stability of dispersed metal (i.e., Cu, Co, Ni) atoms and nanoclusters at high temperature (1000 °C). We find that pressing has a significant impact on the degree of ‘reduction’ of graphene oxide and the morphology and distribution of metals in the films; the presence of metals influences the thermal ‘reduction’ and graphitization of graphene oxide. This work demonstrates the efficacy of externally applied pressure in controlling the reactivity and mobility of metal atoms/clusters in bulk solids, which can be a useful means for preparing a variety of atomic/nano-metal-based hybrid materials.

In order to shield perovskite solar cells (PSCs) fromextrinsicdegradation factors and ensure long-term stability, effective encapsulationtechnology is indispensable. Here, a facile process is developed tocreate a glass-glass encapsulated semitransparent PSC usingthermocompression bonding. From quantifying the interfacial adhesionenergy and considering the power conversion efficiency of devices,it is confirmed that bonding between perovskite layers formed on ahole transport layer (HTL)/indium-doped tin oxide (ITO) glass andan electron transport layer (ETL)/ITO glass can offer an excellentlamination method. The PSCs fabricated through this process have onlyburied interfaces between the perovskite layer and both charge transportlayers as the perovskite surface is transformed into bulk. The thermocompressionprocess leads the perovskite to have larger grains and smoother, denserinterfaces, thereby not only reducing defect and trap density butalso suppressing ion migration and phase segregation under illumination.In addition, the laminated perovskite demonstrates enhanced stabilityagainst water. The self-encapsulated semitransparent PSCs with a wide-band-gapperovskite (E (g) & SIM; 1.67 eV) demonstratea power conversion efficiency of 17.24% and maintain long-term stabilitywith PCE > & SIM;90% in the 85 & DEG;C shelf test for over 3000h and with PCE > & SIM;95% under AM 1.5 G, 1-sun illuminationinan ambient atmosphere for over 600 h.

The reversal of halide ions has been studied under various conditions. However, the underlying mechanism of heat-induced reversal remains unclear. This work finds that dynamic disorder-induced localisation of self-trapped polarons and thermal disorder-induced strain (TDIS) could be co-acting drivers of reverse segregation. Localization of polarons results in an order of magnitude decrease in excess carrier density (polaron population), causing a reduced impact of the light-induced strain (LIS - responsible for segregation) on the perovskite framework. Meanwhile, exposing the lattice to TDIS exceeding the LIS could eliminate the photoexcitation-induced strain gradient, as thermal fluctuations of the lattice could mask the LIS strain. Under continuous 0.1 W/cm2 illumination (upon segregation), the strain disorder was estimated to be 0.14%, while at 80°C under dark conditions, the strain was 0.23%. However, in-situ heating of the segregated film to 80°C under continuous illumination (upon reversal) increased the total strain disorder to 0.25%, where TDIS is likely to have a dominant contribution. Therefore, the contribution of entropy to the system's free energy is likely to dominate, respectively. Various temperature-dependent in-situ measurements and simulations further support the results. These findings highlight the importance of strain homogenization for designing stable perovskites under real-world operating conditions. This article is protected by copyright. All rights reserved.

A contactless effective series resistance imaging method for large-area perovskite solar cells that is based on photoluminescence imaging with nonuniform illumination is introduced and demonstrated experimentally. The proposed technique is applicable to partially and fully processed perovskite solar cells if laterally conductive layers are present. The capability of the proposed contactless method to detect features with high effective series resistance is validated by comparison with various contacted mode luminescence imaging techniques. The method can reliably provide information regarding the severeness of the detected series resistance through photoexcitation pattern manipulation. Application of the method to subcells in monolithic tandem devices, without the need for electrical contacting the terminals, appears feasible.

Copper (Cu) is present not only in the electrode for inverted-structure halide perovskite solar cells (PSCs) but also in transport layers such as copper iodide (CuI), copper thiocyanate (CuSCN), and copper phthalocyanine (CuPc) alternatives to spiro-OMeTAD due to their improved thermal stability. While Cu or Cu-incorporated materials have been effectively utilized in halide perovskites, there is a lack of thorough investigation on the direct reaction between Cu and a perovskite under thermal stress. In this study, we investigated the thermal reaction between Cu and a perovskite as well as the degradation mechanism by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and Kelvin probe force microscopy (KPFM). The results show that high temperatures of 100 °C induce Cu to be incorporated into the perovskite lattice by forming “Cu-rich yet organic A-site-poor” perovskites, (Cu x A1–x )­PbX3, near the grain boundaries, which result in device performance degradation.

For the fabrication of low-dimensional perovskite solar cells, understanding the effect of precursor preparation on film formation is critical to achieve high-quality perovskite film and, therefore, high efficiency in related solar devices. Herein, the two methods to prepare phenethylammonium-based mixed perovskite precursors with the same chemical composition are reported. These methods are called 1) different phase (DP) and 2) same phase (SP) methods as the former involves the mixing of a 3D perovskite precursor with a 2D perovskite precursor, whereas the latter involves the mixing of quasi-2D perovskite precursors. The films prepared by these methods are characterized by X-ray diffraction, Kelvin probe force microscopy, and scanning electron microscopy, revealing different perovskite structures. The power conversion efficiency (PCE) of the champion cells by DP and SP methods reaches 19.1% and 18.9%, respectively. Results of the aging test show a dramatic improvement in the stability of SP perovskite devices maintaining 86% of its initial performance after exposure to a relative humidity (RH) 8 +/- 5% for 1000 hr and over 80% of its initial PCE after continuous 1 sun illumination (including UV) at RH 70%. The new insights provided by this work are important to design perovskite precursor preparation methods for the best device performance and stability.

For semitransparent devices with n-i-p structures, a metal oxide buffer material is commonly used to protect the organic hole transporting layer from damage due to sputtering of the transparent conducting oxide. Here, a surface treatment approach is addressed for tungsten oxide-based transparent electrodes through slight modification of the tungsten oxide surface with niobium oxide. Incorporation of this transparent electrode technique to the protective buffer layer significantly recovers the fill factor from 70.4% to 80.3%, approaching fill factor values of conventional opaque devices, which results in power conversion efficiencies over 18% for the semitransparent perovskite solar cells. Application of this approach to a four-terminal tandem configuration with a silicon bottom cell is demonstrated.

The present work applies a focal point of materials-related issues to review the major case studies of electron transport layers (ETLs) of metal halide perovskite solar cells (PSCs) that contain graphene-based materials (GBMs), including graphene (GR), graphene oxide (GO), reduced graphene oxide (RGO), and graphene quantum dots (GQDs). The coverage includes the principal components of ETLs, which are compact and mesoporous TiO2, SnO2, ZnO and the fullerene derivative PCBM. Basic considerations of solar cell design are provided and the effects of the different ETL materials on the power conversion efficiency (PCE) have been surveyed. The strategy of adding GBMs is based on a range of phenomenological outcomes, including enhanced electron transport, enhanced current density-voltage (J-V) characteristics and parameters, potential for band gap (E-g) tuning, and enhanced device stability (chemical and environmental). These characteristics are made complicated by the variable effects of GBM size, amount, morphology, and distribution on the nanostructure, the resultant performance, and the associated effects on the potential for charge recombination. A further complication is the uncertain nature of the interfaces between the ETL and perovskite as well as between phases within the ETL.

Ambient energy harvesting has great potential to contribute to sustainable development and address growing environmental challenges. Converting waste energy from energy-intensive processes and systems (e.g., combustion engines and furnaces) is crucial to reducing their environmental impact and achieving net-zero emissions. Compact energy harvesters will also be key to powering the exponentially growing smart devices ecosystem that is part of the Internet of Things, thus enabling futuristic applications that can improve our quality of life (e.g., smart homes, smart cities, smart manufacturing, and smart healthcare). To achieve these goals, innovative materials are needed to efficiently convert ambient energy into electricity through various physical mechanisms, such as the photovoltaic effect, thermoelectricity, piezoelectricity, triboelectricity, and electromagnetic power transfer. By bringing together the perspectives of experts in various types of energy harvesting materials, this Roadmap provides extensive insights into recent advances and present challenges in the field. Additionally, the Roadmap analyzes the key performance metrics of these technologies in relation to their ultimate energy conversion limits. Building on these insights, the Roadmap outlines promising directions for future research to fully harness the potential of energy harvesting materials for green energy anytime, anywhere.

Development of efficient solar cells under indoor light has attracted tremendous attention because of the Internet of Things revolution. Here we investigate the effect of chlorine in perovskite precursors for indoor light applications. Use of chlorine has an effect on the photovoltaic performance of perovskite solar cells, especially under low-intensity indoor light. Based on the characterization of leakage current, crystalline structure, and Urbach tail, we reveal that chlorine doping of the perovskite layer influences the movement of photo-generated carriers and ions because of the smaller bulk defects in perovskite. In particular, we suggest that chlorine doping in perovskite facilitates hole extraction on its top surface and contributes to suppression of ion migration and non-radiative recombination, as confirmed by Kelvin probe force microscopy measurements. We demonstrate high performance of perovskite solar cells with a maximum power density of 35.25 (231.78) μW/cm2 under 400 lux light-emitting diode (halogen) illumination. [Display omitted] The effect of chlorine in perovskite precursors for indoor light applicationsDefect density characterization with varied chlorine contentEfficient charge separation within grain boundaryHighly efficient perovskite solar cells under low light intensity Kim et al. investigate the effect of chlorine in perovskite precursors for indoor light applications. Use of chlorine has a significant effect on the photovoltaic performance of perovskite solar cells, especially under low-intensity indoor light. They demonstrate 35.25 and 231.78 μW/cm2 under 400-lux LED and halogen illumination.

Greater stability of low-dimensional halide perovskites as opposed to their three-dimensional counterparts, alongside their high extinction coefficient and thus excellent emission properties, have made them popular candidates for optoelectronic applications. Topological edges are found in two-dimensional perovskites that show distinct electronic properties. In this work, using Kelvin Probe Force Microscopy, performed on butylammonium lead bromide (BA2PbBr4) single crystals with optical bandgap of ~413 nm, we elucidate the electronic response of the edges and their potential impact on photodetector devices. We show that the charge-carriers are accumulated at the edges, increasing with the edge height. Wavelength-dependent surface photovoltage (SPV) measurements reveal that multiple sub-bandgap states exist in BA2PbBr4. As the edge height increases, the SPV amplitude at the edges reduces slightly more as compared to the adjacent regions, known as terraces, indicating relatively less reduction in band-bending at the surface due possibly to increased de-population of electrons from sub-bandgap states in the upper bandgap half. The existence of sub-bandgap states is further confirmed by the observation of below-bandgap emission (absorption) peaks characterised by spectral photoluminescence and photothermal deflection spectroscopy measurements. Finally, we fabricated a photodetector using a millimetre size BA2PbBr4 single crystal. Noticeable broadband photodetection response was observed in the sub-bandgap regions under green and red illumination, which is attributed to the existence of sub-bandgap states. Our observations suggest edge-height dependence of charge-carrier behaviour in BA2PbBr4 single crystals, a potential pathway that can be exploited for efficient broadband photodetector fabrication.

Interest in photovoltaics (PVs) based on Earth-abundant halide perovskites has increased markedly in recent years owing to the remarkable properties of these materials and their suitability for energy-efficient and scalable solution processing. Formamidinium lead triiodide (FAPbI )-rich perovskite absorbers have emerged as the frontrunners for commercialization, but commercial success is reliant on the stability meeting the highest industrial standards and the photoactive FAPbI phase suffers from instabilities that lead to degradation - an effect that is accelerated under working conditions. Here, we critically assess the current understanding of these phase instabilities and summarize the approaches for stabilizing the desired phases, covering aspects from fundamental research to device engineering. We subsequently analyse the remaining challenges for state-of-the-art perovskite PVs and demonstrate the opportunities to enhance phase stability with ongoing materials discovery and in operando analysis. Finally, we propose future directions towards upscaling perovskite modules, multijunction PVs and other potential applications.

Perovskite solar cells (PSCs) have now achieved power conversion efficiencies (PCEs) over 25%, but their long-term stability under illumination and thermal stress is still a major barrier to commercialisation. Herein, we demonstrate the evaluation of light-induced degradation activation energy (Ea) of encapsulated semi-transparent PSCs by using the commonly employed method in crystalline silicon solar cells. Different parameters showed different activation energies where primary degradation is due to increase in series resistance, which also led to reduction in short-circuit current. Open-circuit voltage and shunt resistance also change with different Ea, suggesting the mechanism of the reduction is likely to be due to different reasons. Despite each parameter exhibiting slight variation over time for each temperature, the overall trend converges, indicating that each parameter is likely to be primarily reduced by a single dominant reaction. We also report the main cause of irreversible device degradation is not due to the decomposition of the perovskite layer as confirmed by X-ray diffraction characterisation. Instead, our pole figure map and absorption spectra analysis indicate that a loss of crystal symmetry occurs due to ion migration within the device that induce oxidation of 2,2′,7,7′-tetrakis-(N,N-di-4-methoxyphenylamino)-9,9′-spirobifluorene (Spiro-OMeTAD). Our work provides a better understanding through quantification of the degradation processes of encapsulated semi-transparent PSCs over time, which is essential for further progress and development of stable perovskite-Si tandem solar cells. •The light-induced degradation in semi-transparent solar cell is investigated.•The primary loss of PCEs in PSCs was due to an increase in series resistance.•XRD results indicate stability of perovskite layer, with degradation occurring in other layers.•Diffusion of ions back into the perovskite layer results in a recovery from LID.

Spiro-OMeTAD, one of the most widely used hole-transport materials (HTMs) in optoelectronic devices, typically requires chemical doping with a lithium compound (LiTFSI) to attain sufficient conductivity and efficient hole extraction. However, the doping step requires an activation process that comprises exposure of the blend films to an ambient atmosphere. Additionally, the lithium dopant induces crystallization, and its hygroscopic nature negatively impacts device performance and lifetime. Here we report a facile approach based on the incorporation of a low-cost alkylthiol additive (1-dodecanethiol, DDT) in the spiro-OMeTAD HTM. We discover that DDT provides a more efficient and controllable doping process with significantly reduced doping duration, enabling the HTM to achieve comparable performance before air activation. The coordination between DDT and LiTFSI increases the concentration of dopants in the HTM bulk, reduces their accumulation at interfaces, and enhances the structural integrity of the HTM under wetting, heat and light stress. We fabricate perovskite solar cells using DDT-treated spiro-OMeTAD as the HTM. Our best devices exhibit a certified power conversion efficiency of 23.1%. Furthermore, the devices can retain 90% of peak performance under continuous illumination for 1,000 h. Our findings represent an important step forward in the production of doped spiro-OMeTAD, as well as its reliable application and future device commercialization.

In this work, we report on the design principles of high-power perovskite solar cells (PSCs) for low-intensity indoor light applications, with a particular focus on the electron transport layers (ETLs). It was found that the mechanism of power generation of PSCs under low-intensity LED and halogen lights is surprisingly different compared to the 1 Sun standard test condition (STC). Although a higher power conversion efficiency (PCE) was obtained from the PSC based on mesoporous-TiO2 (m-TiO2) under STC, compared to the compact-TiO2 (c-TiO2) PSC, c-TiO2 PSCs generated higher power than m-TiO2 PSCs under low-intensity (200-1600 Lux) conditions. This result indicates that high PCE at STC cannot guarantee a reliable high-power output of PSCs under low-intensity conditions. Based on the systemic characterization of the ideality factor, charge recombination, trap density, and charge-separation, it was revealed that interfacial charge traps or defects at the electron transport layer/perovskite have a critical impact on the resulting power density of PSC under weak light conditions. Based on Suns-VOC measurements with local ideality factor analyses, it was proved that the trap states cause non-ideal behavior of PSCs under low-intensity light conditions. This is due to the additional trap states that are present at the m-TiO2/perovskite interface, as confirmed by trap-density measurements. Based on Kelvin probe force microscopy (KPFM) measurements, it was confirmed that these traps prohibit efficient charge separation at the perovskite grain boundaries when the light intensity is weak. According to these observations, it is suggested that for the fabrication of high-power PSCs under low-intensity indoor light, the interface trap density should be lower than the excess carrier density to fill the traps at the perovskite's grain boundaries. Finally, using the suggested principle, we succeeded in demonstrating high-performance PSCs by employing an organic ETL, yielding maximum power densities up to 12.36 (56.43), 28.03 (100.97), 63.79 (187.67), and 147.74 (376.85) mu W/cm(2) under 200, 400, 800, and 1600 Lux LED (halogen) illumination which are among the highest values for indoor low-intensity-light solar cells.

Recently, perovskite solar cells have shown excellent performance under indoor light conditions. In a new approach using directional illumination combined with nanoscale scanning probe microscopy (SPM) characterization, morphology dependent‐charge transport measurements are performed to provide a comprehensive understanding of the optoelectronic behavior of (FAPbI3)0.85(MAPbBr3)0.15 containing 5 vol% cesium (Cs5vol%) with various electron transport layers (ETLs), i.e., SnO2, c‐TiO2, and [6,6]‐phenyl‐C61‐butyric acid methyl ester/SnO2 under indoor light. This approach allows the identification of the charge transport properties of the perovskite film and the perovskite/ETL interface separately. The light is applied from the top of the perovskite film to study the electronic properties of the surface. Lower photocurrent and lower surface photovoltage (SPV) are observed under top‐illumination conditions. The electronic interface behavior is investigated using bottom‐illumination and short excitation wavelengths, such as blue LED light. Higher photocurrent and higher SPV are observed under blue light illumination from the bottom. These results suggest that the charge transport capability is enhanced near the p–n junction. Conductive atomic force microscopy results show that SnO2 enhances the charge collection properties of the perovskite's grain boundaries (GBs). Kelvin probe force microscopy results confirm that SnO2 exhibits homogeneous and high surface potential because of the lowest trap states at GBs. A nanoscale morphology dependent photovoltaic characterization is performed in order to better understand perovskite solar cells with different types of electron transport layers under indoor light conditions for IoT applications. It is indicated in the results that the layer type does not only impact the interface properties but strongly influences the charge transport properties at the grain boundary, and thereby, indoor solar cell performance.

Organometal perovskite single crystals have been recognized as a promising platform for high-performance optoelectronic devices, featuring high crystallinity and stability. However, a high trap density and structural nonuniformity at the surface have been major barriers to the progress of single crystal-based optoelectronic devices. Here, the formation of a unique nanoisland structure is reported at the surface of the facet-controlled cuboid MAPbI(3) (MA = CH3NH3+) single crystals through a cation interdiffusion process enabled by energetically vaporized CsI. The interdiffusion of mobile ions between the bulk and the surface is triggered by thermally activated CsI vapor, which reconstructs the surface that is rich in MA and CsI with reduced dangling bonds. Simultaneously, an array of Cs-Pb-rich nanoislands is constructed on the surface of the MAPbI(3) single crystals. This newly reconstructed nanoisland surface enhances the light absorbance over 50% and increases the charge carrier mobility from 56 to 93 cm(2) V-1 s(-1). As confirmed by Kelvin probe force microscopy, the nanoislands form a gradient band bending that prevents recombination of excess carriers, and thus, enhances lateral carrier transport properties. This unique engineering of the single crystal surface provides a pathway towards developing high-quality perovskite single-crystal surface for optoelectronic applications.

The past decade has seen the unprecedentedly rapid emergence of a new class of solar cells based on mixed organic-inorganic halide perovskites. The power conversion efficiency (PCE) of halide perovskite solar cells since then has quickly risen above 25% in single-junction devices and 30% in tandem devices. Twin domains within polycrystalline grains have been recently reported in this material, nevertheless, their roles associated with both ionic and charge carrier transport properties are still to be fully understood. Here, combining molecular dynamic (MD) simulations with nanoscale scanning probe microscopy investigations, we reveal unique properties of the twin domains that exhibit vital channels for ion migration and influence charge separation and collection. Our nanoscale elemental analysis using photo-induced force microscopy reveals that the domain structure possesses an alternating chemical compositional variation, rich and poor in cations for low topography domains (LTDs) and high topography domains (HTDs) respectively. Also, Kelvin probe force microscopy (KPFM) measurements confirm that LTDs provide a confined tunnel for cation vacancy migration. This phenomenon is supported by the MD simulation which suggests the presence of the twin domain wall causes a reduction in the crystal symmetry and appearance of a strain field. Lastly, KPFM and conductive AFM (c-AFM) under illumination show that both photovoltage and photocurrent are higher at LTDs due to the effective charge collection by ion accumulation. This work highlights important elements of the nanoscale intragrain feature that may pave the way to high-efficiency perovskite solar cells.

Membrane-based photothermal crystallization -a pioneering technology for mining valuable minerals from seawater and brines -exploits self-heating nanostructured interfaces to boost water evaporation, so achieving a controlled supersaturation environment that promotes the nucleation and growth of salts. This work explores, for the first time, the use of two-dimensional graphene thin films (2D-G) and three dimensional vertically orientated graphene sheet arrays (3D-G) as potential photothermal membranes applied to the dehydration of sodium chloride, potassium chloride and magnesium sulfate hypersaline solutions, followed by salt crystallization. A systematic study sheds light on the role of vertical alignment of graphene sheets on the interfacial, light absorption and photothermal characteristics of the membrane, impacting on the water evaporation rate and on the crystal size distribution of the investigated salts. Overall, 3D-G facilitates the crystallization of the salts because of superior light-to-heat conversion leading to a 3-fold improvement of the evaporation rate with respect to 2D-G. The exploitation of sunlight graphene-based interfaces is demonstrated as a potential sustainable solution to aqueous wastes valorization via recovery in solid phase of dissolved salts using renewable solar energy.

Effectively incorporating alkali metals or alternative isovalent cations into Cu2ZnSnS4 (CZTS) is considered one of the most promising strategies for realizing a step-change improvement in the photovoltaic device performance. Herein, the local distribution of Na and Cd by a moisture-assisted postdeposition annealing (MAPDA) treatment combined with a subsequent heterojunction heat treatment is manipulated. The MAPDA treatment facilitates the controllable reduction of the Na concentration, thus promoting the spontaneous diffusion of Cd into the heterojunction region. A subsequent 150 degrees C low-temperature heterojunction heat treatment after MAPDA treatment enables further modification of Cd and Na distributions, leading to significantly enhanced optoelectronic properties at the CZTS/CdS heterojunction and greatly improved device performance with a peak conversion efficiency of 9.40%. The modified heterojunction significantly improves quasi-Fermi-level splitting under low-photon injection, making CZTS solar cells more feasible in low-light applications. This work provides an effective approach to simultaneously manipulate the distribution of Na and Cd, enabling pronounced modification of the heterojunction quality of CZTS solar cells and boost of conversion efficiencies. Insights gleaned herein may also be applicable to manipulating other critical trace elements in chalcogenide materials in general.

Mixed-halide wide-band gap perovskites (WBPs) still suffer from losses due to imperfections within the absorber and the segregation of halide ions under external stimuli. Herein, we design a multifunctional passivator (MFP) by mixing bromide salt, formamidinium bromide (FABr) with a p-type self-assembled monolayer (SAM) to target the nonradiative recombination pathways. Photoluminescence measurement shows considerable suppression of nonradiative recombination rates after treatment with FABr. However, WBPs still remained susceptible to halide segregation for which the addition of 25% p-type SAM was effective to decelerate segregation. It is observed that FABr can act as a passivating agent of the donor impurities, shifting the Fermi-level ( ) toward the mid-band gap, while p-type SAM could cause an overweight of toward the valence band. Favorable band bending at the interface could prevent the funneling of carriers toward I-rich clusters. Instead, charge carriers funnel toward an integrated SAM, preventing the accumulation of polaron-induced strain on the lattice. Consequently, n-i-p structured devices with an optimal MFP treatment show an average open-circuit voltage ( ) increase of about 20 mV and fill factor ( ) increase by 4% compared with the control samples. The unencapsulated devices retained 95% of their initial performance when stored at room temperature under 40% relative humidity for 2800 h.

The use of inexpensive, highly efficient, and long-term stable hole-transporting layers (HTLs) while facilitating the fabrication process has become a critical issue for PSC commercialization. Among organic HTLs, copper phthalocyanine (CuPc) has been increasingly studied owing to its low cost and excellent thermal stability. Nevertheless, CuPc has a low energy level in the conduction band, resulting in low efficiency due to a poor electron barrier. In this study, an efficient and stable PSC is fabricated by combining CuPc with an ultrathin poly(methyl methacrylate) (PMMA) interlayer, which is deposited on a [(FAPbI3)0.95(MAPbBr3)0.05] absorption layer (here, FAPbI3 and MAPbBr3 denote formamidinium lead triiodide and methylammonium lead tribromide, respectively). PMMA in perovskite has been found to reduce perovskite surface defects and series resistance as well as the electronic barrier to HTL. The optimum concentration of PMMA allows for the fabrication of the PSC with a PCE of 21.3%, which is the highest PCE for PSCs featuring metal phthalocyanines as the HTL reported to date. The stability of the encapsulated PSC exceeds 80% after 760 h at 85 °C under 85% RH conditions.

The optoelectronic performance of organic−inorganic halide perovskite (OIHP)-based devices has been improved in recent years. Particularly, solar cells fabricated using mixed-cations and mixed-halides have outperformed their single-cation and single-halide counterparts. Yet, a systematic evaluation of the microstructural behavior of mixed perovskites is missing despite their known composition-dependent photoinstability. Here, we explore microstructural inhomogeneity in (FAPbI3)x(MAPbBr3)1−x using advanced scanning probe microscopy techniques. Contact potential difference (CPD) maps measured by Kelvin probe force microscopy show an increased fraction of grains exhibiting a low CPD with flat topography as MAPbBr3 concentration is increased. The higher portion of low CPD contributes to asymmetric CPD distribution curves. Chemical analysis reveals these grains being rich in MA, Pb, and I. The composition-dependent phase segregation upon illumination, reflected on the emergence of a low-energy peak emission in the original photoluminescence spectra, arises from the formation of such grains with flat topology. Bias-dependent piezo-response force microscopy measurements, in these grains, further confirm vigorous ion migration and cause a hysteretic piezo-response. Our results, therefore, provide insights into the microstructural evaluation of phase segregation and ion migration in OIHPs pointing toward process optimization as a mean to further enhance their optoelectronic performance.

Kesterite-based thin-film solar cells (TFSCs) have recently gained significant attention in the photovoltaic (PV) sector for their elemental earth abundance and low toxicity. An inclusive study from the past reveals basic knowledge about the grain boundary (GB) and grain interior (GI) interface. However, the compositional dependency of the surface potential within GBs and GIs remains unclear. The present work provides insights into the surface potential of the bulk and GB interfaces. The tin (Sn) composition is sensitive to the absorber morphology, and therefore, it significantly impacts absorber and device properties. The absorber morphology improves with the formation of larger grains as the Sn content increases. Additionally, the presence of Sn(S,Se)(2) and increased [Zn-Cu + V-Cu] A-type defect cluster density are observed, validated through Raman analysis. The secondary ion mass spectroscopy analysis reveals the altered distribution of sulfur (S) and sodium (Na) with higher near-surface accumulation. The synergistic outcome of the increased density of defects and the accumulation of S near the interface provides a larger GB and GI difference and expedites carrier separation improvement. Consequently, at an optimum compositional ratio of Cu/(Zn+Sn) = similar to 0.6, the power conversion efficiency (PCE) is significantly improved from 6.42 to 11.04% with a record open-circuit voltage (V-OC) deficit of 537 mV.

To expedite the commercialization of perovskite solar cells (PSCs), researchers are exploring the feasibility of employing nickel phthalocyanine (NiPc) as a hole transport material (HTM) due to its cost-effectiveness, excellent thermal stability, and suitability for solution coating. However, the low LUMO energy level of the NiPc may limit its ability to block photoelectrons generated in the perovskite layer from recombining with holes, which can reduce the overall efficiency of the solar cell. One solution is to use cascaded bilayers with HTMs that have relatively higher LUMO levels. In this study, a bilayer consisting of NiPc and poly(3-hexylthiophene) (P3HT) is employed as the HTM, where the P3HT exhibits vertical phase separation during the coating process. By optimizing the mixing amount of P3HT into the NiPc, a record power conversion efficiency of 23.11%, the highest reported for NiPc-based PSCs is achieved. Moreover, an excellent long-term stability is demonstrated by encapsulating the PSC in polyisobutylene, with the device retaining 90% of its initial efficiency after exposure to 85 & DEG;C and 85% relative humidity for 1000 h.

In this study, we propose a strategic interface engineering method for optimizing the power density and power conversion efficiency (PCE) of perovskite solar cells (PVSCs) under low-intensity indoor light conditions. The insertion of a polar bathocuproine (BCP) layer at the electron transport interface significantly improved the photovoltaic properties, in particular, the fill factor and open circuit voltage, in a low-intensity light environment. Based on the systemic characterizations of surface trap states and carrier dynamics using Kelvin probe force microscopy, we revealed that BCP facilitated efficient charge carrier separation and electron extraction under low-intensity light illumination due to surface passivation and dipole-induced suppressed charge recombination. The beneficial role of BCP enabled excellent indoor PCEs of 27.04 and 35.45% under low-intensity light-emitting diode and halogen lights, respectively. Modification of the electron transport layer interface using polar molecules is a simple but highly effective method for optimizing the indoor performance of PVSCs.

Recently, kesterite-based absorbers and related compounds have been considered as promising eco-friendly light absorber materials for thin-film solar cells (TFSCs). However, the device performances of kesterite-based TFSCs are limited because of the formation of defects and poor interfacial properties. In this study, we developed a strategic approach to improve the device performances of Cu2ZnSn­(S,Se)4 (CZTSSe) solar cells using back-interface passivation of the absorber layer and further reduced the formation of defects through Ge doping. The application of CuAlO2 (CAO) as an intermediate layer near the back interface efficiently improves the grain growth and minimizes the detrimental Mo­(S,Se)2 thickness. In addition, the Ge nanolayer deposited over the CAO layer improves the absorber bulk quality, effectively suppresses the defect density, and reduces the nonradiative carrier recombination losses. As a result, the short-circuit current density, fill factor, and power conversion efficiency of the champion device with the CAO and Ge nanolayer improved from 31.91 to 36.26 mA/cm2, 0.55 to 0.61, and 8.58 to 11.01%, respectively. This study demonstrates a potential approach to improve the performances of CZTSSe TFSCs using a combination of back-interface passivation and doping.

Solar cells made from Cu 2 ZnSn(S,Se) 4 (CZTS)-derived materials have been widely studied for their favourable material properties utilized in photovoltaic energy conversion. Drawbacks of the materials are associated with low open circuit voltage (V oc) resulting from non-radiative recombination at grain boundaries and interfaces. Considerable work has focused on the incorporation of sodium (Na), which is found to passivate trap states and reduce electronic losses. Here we present evidence that Na + as well as several ionic species (Se 2À and Zn 2+), do not remain stationary after device fabrication, but in fact migrate under electrical biasing. Furthermore, this ionic migration can be manipulated at room temperature by exposing the device to an external electric forming field. We outline a novel procedure that can effectively control and adjust ionic movement and associated local distribution in fully fabricated devices. Our results show that this simple treatment leads to favourable improved device performance and provides insight into light-induced reduction in performance which may be partially reversible.