
Dr Bob Simmons
Academic and research departments
Advanced Technology Institute, Photonics and Quantum Sciences Group, Department of Physics.Publications
This paper reports on the predicted increase in the Rashba interaction due to the incorporation of Bi in GaAs/AlGaAs heterostructures. Band structure parameters obtained from the band anti-crossing theory have been used in combination with self-consistent Schrödinger-Poisson calculations and k.p models to determine the electron spin-splitting caused by structural inversion asymmetry and increased spin-orbit interaction. A near linear seven fold increase in the strength of the Rashba interaction is predicted for a 10% concentration of Bi in a GaAsBi/AlGaAs quantum well heterostructure.