Dr Bob Simmons

Postgraduate research student
+44 (0)1483 689403
08 ATI 02


RA Simmons, SR Jin, SJ Sweeney, SK Clowes (2015)Enhancement of Rashba interaction in GaAs/AlGaAs quantum wells due to the incorporation of bismuth, In: APPLIED PHYSICS LETTERS107(14)ARTN 1 AMER INST PHYSICS

This paper reports on the predicted increase in the Rashba interaction due to the incorporation of Bi in GaAs/AlGaAs heterostructures. Band structure parameters obtained from the band anti-crossing theory have been used in combination with self-consistent Schrödinger-Poisson calculations and k.p models to determine the electron spin-splitting caused by structural inversion asymmetry and increased spin-orbit interaction. A near linear seven fold increase in the strength of the Rashba interaction is predicted for a 10% concentration of Bi in a GaAsBi/AlGaAs quantum well heterostructure.