Chris Jeynes

Professor Chris Jeynes


Professorial Research Fellow

Academic and research departments

Ion Beam Centre.

Biography

Research

Research interests

Research collaborations

My publications

Publications

Double-spiral galaxies are common in the Universe. It is known that the logarithmic double spiral is a Maximum Entropy geometry in hyperbolic (flat) spacetime that well represents an idealised spiral galaxy, with its central supermassive black hole (SMBH) entropy accounting for key galactic structural features including the stability and the double-armed geometry. Over time the central black hole must accrete mass, with the overall galactic entropy increasing: the galaxy is not at equilibrium. From the associated entropic Euler–Lagrange Equation (enabling the application of Noether’s theorem) we develop analytic expressions for the galactic entropy production of an idealised spiral galaxy showing that it is a conserved quantity, and we also derive an appropriate expression for its relativistic entropic Hamiltonian. We generalise Onsager’s celebrated expression for entropy production and demonstrate that galactic entropy production (entropy production corresponds to the intrinsic dissipation characteristics) is composed of two parts, one many orders of magnitude larger than the other: the smaller is comparable to the Hawking radiation of the central SMBH, while the other is comparable to the high entropy processes occurring within the accretion disks of real SMBHs. We conclude that galaxies cannot be isolated, since even idealised spiral galaxies intrinsically have a non-zero entropy production.

DJ Kang, G Burnell, SJ Lloyd, RS Speaks, NH Peng, C Jeynes, R Webb, JH Yun, SH Moon, B Oh, EJ Tarte, DF Moore, MG Blamire (2002)Realization and properties of YBa2Cu3O7-delta Josephson junctions by metal masked ion damage technique, In: APPLIED PHYSICS LETTERS80(5)pp. 814-816 AMER INST PHYSICS
C Jeynes, NP Barradas, PK Marriott, G Boudreault, M Jenkin, E Wendler, RP Webb (2003)Elemental thin film depth profiles by ion beam analysis using simulated annealing - a new tool, In: JOURNAL OF PHYSICS D-APPLIED PHYSICS36(7)PII S0pp. R97-R126 IOP PUBLISHING LTD
C. Jeynes (2016)RBS as a new primary direct reference method for measuring quantity of material, In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms406(Part A)pp. 30-31 Elsevier

The quantity of material in thin films can be measured reliably, non-destructively, and at an absolute traceable accuracy with a combined standard uncertainty of 1% by Rutherford backscattering spectrometry (RBS). We have demonstrated a measurement protocol for the determination of quantity of material by RBS that has been accredited at this accuracy to the ISO 17025 standard by the United Kingdom Accreditation Service (UKAS). The method is entirely traceable to SI units relying on no artefacts, and thus qualifies as a primary direct reference method as defined by the ISO Guide 35:1985 (paragraph 9.4.1).

BR Wakeling, B Degamber, G Kister, DW Lane, Melanie Bailey, Christopher Jeynes (2012)In situ analysis of cadmium sulphide chemical bath deposition by an optical fibre monitor, In: Thin Solid Films525pp. 1-5 Elsevier

The CdS window layer in thin film solar cells is frequently grown by chemical bath deposition (CBD). Deposited films are typically less than 100 nm thick and the inability to identify the exact start of the deposition can make CBD an imprecise process. This paper describes the construction and testing of a simple optical fibre sensor that detects the start of the deposition process and also allows for its mechanism to be studied. The in situ optical fibre monitoring technique utilises the change in optical reflectance off the glass/deposited film/precursor solution interfaces at an operating wavelength of 1550 nm. A theoretical expression for the reflection of light from the interface is discussed and compared with experimental results. The monitoring technique shows the presence of two different deposition mechanisms. This result is confirmed by film densities calculated by Rutherford backscattering spectrometry and an optical model for ellipsometry measurements which indicates that the deposited CdS films consist of a double layer structure with a porous layer on top of a dense under layer. The application of the theoretical expression is optimised by assuming the refractive index of the CdS layer to be 2.02. The ellipsometry model shows that the refractive index of the CdS deposited is 2.14 for a two layer model of the film that included a porous upper layer through the effective medium approximation.

Christopher Jeynes (2002)Science and Creation

This is an abridgement of S.L.Jaki, "Science and Creation, from eternal cycles to an oscillating universe" (Scottish Academic Press, Edinburgh, 1974: 367pp, 14 chapters). Why is it that in all recorded history, modern science with all its technical success and mastery has arisen only in Europe? Science was stillborn in civilisations that thought of time as infinite in extent and cyclic in effect. Only in Europe, under the strong philosophical influence of Christianity, was time thought of as finite in extent and progressive in effect. The primary requirement for a scientific attitude to take hold is for there to be underlying presumptions that God is rational and that people matter. This essay attempts a summary of Stanley Jaki’s book, mostly in Jaki’s own words.

Christopher Jeynes, Vladimir Palitsin, M. Kokkoris, A. Hamilton, Geoffrey Grime (2020)On the accuracy of Total-IBA, In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms465pp. 85-100 Elsevier

“Total-IBA” implies the synergistic use of multiple IBA techniques. It has been claimed that Total–IBA inherits the accuracy of the most accurate IBA technique used. A specific example is now given of this where (in vacuo) EBS/PIXE of a glass sample uniform in depth is validated against absolutely calibrated EPMA of the same sample. The EPMA results had a mass closure gap of 2.0 ± 0.6 wt%; the full PIXE analysis determined the composition of this missing 2 wt%. The PIXE calibration was against a single certified glass sample, with uncertainties per line ~10%. Benchmarking also demonstrates ~10% underestimation of the Si scattering cross-section at proton energies ~3 MeV. But the Total-IBA determination of the silica content had a low standard uncertainty of about 2%. This is due to the strong constraints of both the chemical prior and also the mass closure properties of the EBS. Irradiation-induced sodium migration in this soda-lime glass is explored.

GJ Ross, NP Barradas, MP Hill, C Jeynes, P Morrissey, JF Watts (2001)Rutherford backscattering spectrometry and computer simulation for the in-depth analysis of chemically modified poly(vinylidene fluoride), In: JOURNAL OF MATERIALS SCIENCE36(19)pp. 4731-4738 KLUWER ACADEMIC PUBL
G Claudio, G Boudreault, C Jeynes, BJ Sealy, R Low, B Brown, TL Alford, M Nastasi, MC Vella (2003)Absolute dose performance of the SWIFT single wafer ion implanter, In: IIT2002: ION IMPLANTATION TECHNOLOGY, PROCEEDINGSpp. 237-239
M Milosavljevic, G Shao, N Bibic, CN McKinty, C Jeynes, KP Homewood (2001)Amorphous-iron disilicide: A promising semiconductor, In: APPLIED PHYSICS LETTERS79(10)pp. 1438-1440 AMER INST PHYSICS
JCG Jeynes, MJ Bailey, H Coley, KJ Kirkby, C Jeynes (2010)Microbeam PIXE analysis of platinum resistant and sensitive ovarian cancer cells, In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS268(11-12)pp. 2168-2171 ELSEVIER SCIENCE BV
NH Peng, C Jeynes, R Webb, I Chakarov, DJ Kang, D Moore, M Blamire (2002)Monte Carlo simulations of energetic proton beam irradiation damage defect productions in YBCO thin films with Au masks, In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS188pp. 189-195
J. Charles G. Jeynes, Kalotina Geraki, Christopher Jeynes, Mi Zhaohong, Andrew A. Bettiol, Eva Latorre, Lorna Wendy Harries, Christian Soeller (2017)Nanoscale Properties of Human Telomeres Measured with a Dual Purpose X-ray Fluorescence and Super Resolution Microscopy Gold Nanoparticle Probe, In: ACS Nano11(12)pp. 12632-12640 American Chemical Society

Techniques to analyze human telomeres are imperative in studying the molecular mechanism of aging and related diseases. Two important aspects of telomeres are their length in DNA base pairs (bps) and their biophysical nanometer dimensions. However, there are currently no techniques that can simultaneously measure these quantities in individual cell nuclei. Here, we develop and evaluate a telomere “dual” gold nanoparticle-fluorescent probe simultaneously compatible with both X-ray fluorescence (XRF) and super resolution microscopy. We used silver enhancement to independently visualize the spatial locations of gold nanoparticles inside the nuclei, comparing to a standard QFISH (quantitative fluorescence in situ hybridization) probe, and showed good specificity at ∼90%. For sensitivity, we calculated telomere length based on a DNA/gold binding ratio using XRF and compared to quantitative polymerase chain reaction (qPCR) measurements. The sensitivity was low (∼10%), probably because of steric interference prohibiting the relatively large 10 nm gold nanoparticles access to DNA space. We then measured the biophysical characteristics of individual telomeres using super resolution microscopy. Telomeres that have an average length of ∼10 kbps, have diameters ranging between ∼60–300 nm. Further, we treated cells with a telomere-shortening drug and showed there was a small but significant difference in telomere diameter in drug-treated vs control cells. We discuss our results in relation to the current debate surrounding telomere compaction.

MJ Bailey, C Jeynes, BJ Sealy, RP Webb, RM Gwilliam (2010)On artefacts in the secondary ion mass spectrometry profiling of high fluence H+ implants in GaAs, In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS268(11-12)pp. 2051-2055
M Milosavljević, D Peruško, V Milinović, B Timotijević, A Zalar, J Kovač, C Jeynes (2009)High ion irradiation tolerance of multilayered AlN/TiN nanocomposites, In: Proceedings of International Topical Meeting on Nuclear Research Applications and Utilization of Accelerators
AV Adedeji, GO Egharevba, C Jeynes, EOB Ajayi (2002)Preparation and characterization of pyrolytically deposited (Co-V-O and Cr-V-O) thin films, In: THIN SOLID FILMS402(1-2)pp. 49-54 ELSEVIER SCIENCE SA
DJ Kang, R Speaks, NH Peng, R Webb, C Jeynes, WE Booij, EJ Tarte, DF Moore, MG Blamire (2001)Nanometer scale masked ion damage barriers in YBa2Cu3O7-delta, In: IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY11(1)pp. 780-783
DA Bradley, W Kaabar, O Gundogdu, MJ Farquharson, M Janousch, M Bailey, C Jeynes (2010)Synchrotron and ion beam studies of the bone-cartilage interface, In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT619(1-3)pp. 330-337 ELSEVIER SCIENCE BV
N Peng, C Jeynes, MJ Bailey, D Adikaari, V Stolojan, RP Webb (2009)High concentration Mn ion implantation in Si, In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS267(8-9)pp. 1623-1625 ELSEVIER SCIENCE BV
NP Barradas, PK Marriott, C Jeynes, RP Webb (1998)The RBS data furnace: Simulated annealing, In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS136pp. 1157-1162
S Whelan, MJ Kelly, R Gwilliam, C Jeynes, C Bongiorno (2005)The dependence of the radiation damage formation on the substrate implant temperature in GaN during Mg ion implantation, In: JOURNAL OF APPLIED PHYSICS98(1)ARTN 0pp. ?-? AMER INST PHYSICS
C Jeynes (2015)Costs of open data, In: PHYSICS WORLD28(4)pp. 21-21 IOP PUBLISHING LTD
A Utgenannt, Ross Maspero, Andrea Fortini, R Turner, Marian Florescu, Christopher Jeynes, AG Kanaras, OL Muskens, Richard Sear, Joseph Keddie (2016)Fast Assembly of Gold Nanoparticles in Large-Area 2-D Nanogrids Using a One-Step, Near-Infrared Radiation-Assisted Evaporation Process, In: ACS Nano10(2)pp. 2232-2242 American Chemical Society

When fabricating photonic crystals from suspensions in volatile liquids using the horizontal deposition method, the conventional approach is to evaporate slowly to increase the time for particles to settle in an ordered, periodic close-packed structure. Here, we show that the greatest ordering of 10 nm aqueous gold nanoparticles (AuNPs) in a template of larger spherical polymer particles (mean diameter of 338 nm) is achieved with very fast water evaporation rates obtained with near-infrared radiative heating. Fabrication of arrays over areas of a few cm2 takes only seven minutes. The assembly process requires that the evaporation rate is fast relative to the particles’ Brownian diffusion. Then a two-dimensional colloidal crystal forms at the falling surface, which acts as a sieve through which the AuNPs pass, according to our Langevin dynamics computer simulations. With sufficiently fast evaporation rates, we create a hybrid structure consisting of a two-dimensional AuNP nanoarray (or “nanogrid”) on top of a three-dimensional polymer opal. The process is simple, fast and one-step. The interplay between the optical response of the plasmonic Au nanoarray and the microstructuring of the photonic opal results in unusual optical spectra with two extinction peaks, which are analyzed via finite-difference time-domain method simulations. Comparison between experimental and modelling results reveals a strong interplay of plasmonic modes and collective photonic effects, including the formation of a high-order stop band and slow-light enhanced plasmonic absorption. The structures, and hence their optical signatures, are tuned by adjusting the evaporation rate via the infrared power density.

M. C. Parker, C. Jeynes (2020)Fullerene Stability by Geometrical Thermodynamics, In: ChemistrySelect5(1)pp. 5-14 Wiley

Schlegel projections of selected fullerenes (the non-chiral C60, C384; and the weakly-chiral C28, C76 and C380) are used to show that these fullerenes can all be represented by pairs of counter-propagating spirals featuring anti-parallel (C2) symmetry, even though C380 and C384 are nonface-spiral fullerenes. In the case of C60, the high symmetry is used to construct an analytical approximation for these spirals, demonstrating that they form a holomorphic function satisfying the Euler-Lagrange equations, and thus confirming that the entropic equivalent of the Principle of Least Action (that is, the Principle of Least Exertion) is obeyed. Hence the C60 structure has Maximum Entropy (MaxEnt), is therefore maximum likelihood, and consequently its stability is established on entropic grounds. The present MaxEnt stability criterion is general, depending only on the geometry and not the physics of the system. A Shannon entropy-based fragmentation metric is used to quantify both the intrinsic sense and the degree of chirality for C76 and C380. We have shown that the stability of C60 is a general property of the thermodynamics of the system. This is a significant methodological advance since it shows that a detailed treatment of the energetics is not always necessary: this may prove fruitful, not only for fullerenes but also for general problems of molecular stability and in other applications of conformational chemistry.

C JEYNES (1978)NATURAL POLYCRYSTALLINE DIAMOND, In: INDUSTRIAL DIAMOND REVIEW(JAN)pp. 14-23 INDUSTRIAL DIAMOND REVIEW
P Too, S Ahmed, C Jeynes, BJ Sealy, R Gwilliam (2002)Electrical isolation of n-type InP using MeV iron implantation at different doses and substrate temperatures, In: ELECTRONICS LETTERS38(20)pp. 1225-1226 IEE-INST ELEC ENG
NP Barradas, C Jeynes, RP Webb, E Wendler (2002)Accurate determination of the stopping power of He-4 in Si using Bayesian inference, In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS194(1)PII S0168-pp. 15-25 ELSEVIER SCIENCE BV
NH Peng, C Jeynes, RM Gwilliam, KJ Kirkby, RP Webb, GS Shao, DA Astill, WY Liang (2005)A potential integrated low temperature approach for superconducting MgB2 thin film growth and electronics device fabrication by ion implantation, In: IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY15(2)pp. 3265-3268
MA Eleruja, AV Adedeji, GO Egharevba, JN Lambi, MS Akanni, C Jeynes, EOB Ajayi (2002)Preparation and characterization of undoped zinc oxide and uranium doped zinc oxide thin films, In: OPTICAL MATERIALS20(2)PII S0925-pp. 119-123 ELSEVIER SCIENCE BV
C JEYNES (1983)A PROPOSED DIAMOND POLISHING PROCESS, In: PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES48(2)pp. 169-197 TAYLOR & FRANCIS LTD
NP Barradas, C Jeynes, MA Harry (1998)RBS/simulated annealing analysis of iron-cobalt silicides, In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS136pp. 1163-1167 ELSEVIER SCIENCE BV
J Rickerby, A Simon, C Jeynes, TJ Morgan, JHG Steinke (2006)1,1,1,5,5,5-Hexafluoroacetylacetonate copper(I) poly(vinylsiloxane)s as precursors for copper direct-write, In: CHEMISTRY OF MATERIALS18(10)pp. 2489-2498 AMER CHEMICAL SOC
WP Lee, VR Gundabala, BS Akpa, ML Johns, C Jeynes, AF Routh (2006)Distribution of surfactants in latex films: A Rutherford backscattering study, In: LANGMUIR22(12)pp. 5314-5320 AMER CHEMICAL SOC
C Jeynes (2014)Double-blind bind, In: PHYSICS WORLD27(7)pp. 20-20 IOP PUBLISHING LTD
Vladimir Palitsin, JCG Jeynes, Christopher Jeynes, HE Townley (2016)Direct quantification of rare earth doped titania nanoparticles in individual human cells, In: Nanotechnology27(28) Institute of Physics

There are many possible biomedical applications for titania nanoparticles (NPs) doped with rare earth elements (REEs), from dose enhancement and diagnostic imaging in radiotherapy, to biosensing. However, there are concerns that the NPs could disintegrate in the body thus releasing toxic REE ions to undesired locations. As a first step, we investigate how accurately the Ti/REE ratio from the NPs can be measured inside human cells. A quantitative analysis of whole, unsectioned, individual human cells was performed using proton microprobe elemental microscopy. This method is unique in being able to quantitatively analyse all the elements in an unsectioned individual cell with micron resolution, while also scanning large fields of view. We compared the Ti/REE signal inside cells to NPs that were outside the cells, non-specifically absorbed onto the polypropylene substrate. We show that the REE signal in individual cells co-localises with the titanium signal, indicating that the NPs have remained intact. Within the uncertainty of the measurement, there is no difference between the Ti/REE ratio inside and outside the cells. Interestingly, we also show that there is considerable variation in the uptake of the NPs from cell-to-cell, by a factor of more than 10. We conclude that the NPs enter the cells and remain intact. The large heterogeneity in NP concentrations from cell-to-cell should be considered if they are to be used therapeutically.

NP Barradas, C Jeynes, SM Jackson (1998)RBS/simulated annealing analysis of buried SiCOx layers formed by implantation of O into cubic silicon carbide, In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS136pp. 1168-1171 ELSEVIER SCIENCE BV
M Murtagh, SM Lynch, PV Kelly, S Hildebrant, PAF Herbert, C Jeynes, GM Crean (1997)Photoreflectance characterisation of Ar+ ion etched and SiCl4 reactive ion etched silicon (100), In: MATERIALS SCIENCE AND TECHNOLOGY13(11)pp. 961-964
AF Gurbich, C Jeynes (2014)Evaluation of Non-Rutherford Alpha Elastic Scattering Cross-sections for Silicon, In: NUCLEAR DATA SHEETS119pp. 270-272 ACADEMIC PRESS INC ELSEVIER SCIENCE
A Kozanecki, C Jeynes, BJ Sealy, A Nejim (1998)Ion beam analysis of 6H SiC implanted with erbium and ytterbium ions, In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS136pp. 1272-1276
J Slotte, M Rummukainen, F Tuomisto, VP Markevich, AR Peaker, Christopher Jeynes, Russell Gwilliam (2008)Evolution of vacancy-related defects upon annealing of ion-implanted germanium, In: PHYSICAL REVIEW B78(8)ARTN 0pp. ?-? AMER PHYSICAL SOC
NP Barradas, E Alves, C Jeynes, M Tosaki (2006)Accurate simulation of backscattering spectra in the presence of sharp resonances, In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS247(2)pp. 381-389 ELSEVIER SCIENCE BV
A SHOJAI, GT REED, C JEYNES (1992)DIFFUSION OF ION-IMPLANTED NEODYMIUM IN SILICA, In: JOURNAL OF PHYSICS D-APPLIED PHYSICS25(8)pp. 1280-1283 IOP PUBLISHING LTD
T Ohe, B Zou, PM Morris, RA Wogelius, K Noshita, I Gomez-Morilla, C Jeynes (2012)Adsorption and diffusion of strontium in simulated rock fractures quantified via ion beam analysis, In: Mineralogical Magazine76(8)pp. 3203-3215

An experimental technique has been developed and applied to the problem of determining effective diffusion coefficients and partition coefficients of Sr in low permeability geological materials. This technique, the micro-reactor simulated channel method (MRSC), allows rapid determination of contaminant transport parameters with resulting values comparable to those determined by more traditional methods and also creates product surfaces that are amenable for direct chemical analysis. An attempt to further constrain mass flux was completed by detailed ion beam analysis of polished tuff surfaces (tuff is a polycrystalline polyminerallic aggregate dominated by silicate phases) that had been reacted with Sr solutions at concentrations of 10, 10 and 10 mol 1. Ion beam analysis was carried out using beams of both protons (using particle induced X-ray emission and elastic backscattering spectrometry or EBS) and alpha-particles (using Rutherford backscattering spectrometry). The ion beam analyses showed that increased solution concentrations resulted in increased surface concentrations and that in the highest concentration experiment, Sr penetrated to at least 4 mm below the primary interface. The Sr surface concentrations determined by EBS were 0.06 (±0.05), 0.87 (±0.30) and 2.40 (±1.0) atomic weight % in the experiments with starting solution concentrations of 10 , 10, and 10 mol 1, respectively. © 2012 The Mineralogical Society.

DJ Kang, NH Peng, R Webb, C Jeynes, JH Yun, SH Moon, B Oh, G Burnell, EJ Tarte, DF Moore, MG Blamire (2002)Realization and properties of MgB2 metal-masked ion damage junctions, In: APPLIED PHYSICS LETTERS81(19)pp. 3600-3602 AMER INST PHYSICS
MBH Breese, DG de Kerckhove, C Jeynes, RMA Peel, CW Murray (2001)An electrostatic beam rocking system on the Surrey nuclear microprobe, In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS181pp. 54-59
M SINGH, EC LIGHTOWLERS, G DAVIES, C JEYNES, KJ REESON (1989)ISOELECTRONIC BOUND EXCITON PHOTOLUMINESCENCE FROM A METASTABLE DEFECT IN SULFUR-DOPED SILICON, In: MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY4(1-4)pp. 303-307
NH Peng, C Jeynes, R Webb, I Chakarov, M Blamire (2002)Optimisation of masked ion irradiation damage profiles in YBCO thin films by Monte Carlo simulation, In: PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS372pp. 55-58
ZH JAFRI, C JEYNES, RP WEBB, IH WILSON (1989)OBSERVATION OF SWELLING AND SPUTTERING OF A SILICON TARGET UNDER ARGON ION IRRADIATION USING A DOUBLE MARKER TECHNIQUE, In: VACUUM39(11-12)pp. 1119-1121 PERGAMON-ELSEVIER SCIENCE LTD
MJ Bailey, C Jeynes (2009)Characterisation of gunshot residue particles using self-consistent ion beam analysis, In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS267(12-13)pp. 2265-2268 ELSEVIER SCIENCE BV
MJ Bailey, KT Howard, KJ Kirkby, C Jeynes (2009)Characterisation of inhomogeneous inclusions in Darwin glass using ion beam analysis, In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS267(12-13)pp. 2219-2224 ELSEVIER SCIENCE BV

Darwin glass is an impact glass resulting from the melting of local rocks during the meteorite impact that formed the 1.2 km diameter Darwin Crater in western Tasmania. These glass samples have small spheroidal inclusions, typically a few tens of microns in diameter, that are of great interest to the geologists. We have analysed one such inclusion in detail with proton microbeam ion beam analysis (IBA). A highly heterogeneous composition is observed, both laterally and in depth, by using self-consistent fitting of photon emission and particle backscattering spectra. With various proton energies near 2 MeV we excite the C-12(p,p)C-12 resonance at 1734 keV at various depths, and thus we can probe both the C concentration, and also the energy straggling of the proton beam as a function of depth which gives information on the sample structure. This inclusion has an average composition of (C, O, Si) = (28, 56, 16) mol% with S, K, Ca, Ti and Fe as minor elements and Cr, Mn, Ni, Cu, Zn and Br as trace elements. This composition includes, at specific points, an elemental depth profile and a density variation with depth consistent with discrete quartz crystals a few microns in size. (c) 2009 Elsevier B.V. All rights reserved.

T Alzanki, R Gwilliam, N Emerson, Z Tabatabaian, C Jeynes, BJ Sealy (2004)Concentration profiles of antimony-doped shallow layers in silicon, In: SEMICONDUCTOR SCIENCE AND TECHNOLOGY19(6)PII S0pp. 728-732 IOP PUBLISHING LTD
C. Jeynes, V.V. Palitsin, G.W. Grime, C. Pascual-Izarra, A. Taborda, M.A. Reis, N.P. Barradas (2020)External Beam Total-IBA using DataFurnace, In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms481pp. 47-61 Elsevier

The self-consistent Ion Beam Analysis (IBA) of cultural heritage samples using the external beam is technically demanding. We report on the calibration of an analysis of glass samples from the Rosslyn Chapel where the interest will ultimately be in the full characterisation of the weathered glass. Such an analysis requires a comprehensive Total-IBA approach using p-PIGE and He-PIXE to obtain ”bulk” and surface Na, with H-PIXE/EBS for multielemental depth profiling to 10 μm and He-PIXE/EBS for higher depth resolution near the surface; also with two PIXE detectors as usual for the high and low energy parts of the spectrum. A revised NDF v.10 code capable of a self-consistent handling of all these signals at state-of-the-art accuracy is described, together with the calibration protocols required for such an analysis. Other capabilities of the NDF code not previously discussed are also reviewed.

NH Peng, DJ Kang, C Jeynes, RP Webb, DF Moore, MG Blamire, IR Chakarov (2003)High quality YBa2Cu3O7-delta Josephson junctions and junction arrays fabricated by masked proton beam irradiation damage, In: IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY13(2)pp. 889-892
C Jeynes, N Peng, NP Barradas, RM Gwilliam (2006)Quality assurance in an implantation laboratory by high accuracy RBS, In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS249pp. 482-485 ELSEVIER SCIENCE BV
P Lazzeri, GS Oehrlein, GJ Stueber, R McGowan, E Busch, S Pederzoli, C Jeynes, M Bersani, M Anderle (2008)Interactions of photoresist stripping plasmas with nanoporous organo-silicate ultra low dielectric constant dielectrics, In: THIN SOLID FILMS516(11)pp. 3697-3703
C JEYNES (1989)NOVEL APPLICATIONS OF ION-IMPLANTATION, In: VACUUM39(11-12)pp. 1047-1056
C Jeynes, NP Barradas, MJ Blewett, RP Webb (1998)Improved ion beam analysis facilities at the University of Surrey, In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS136pp. 1229-1234
RP WEBB, C JEYNES, IH WILSON (1986)THE EFFECT OF ANGLE OF INCIDENCE ON INTERFACE BROADENING, In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS13(1-3)pp. 449-452 ELSEVIER SCIENCE BV
MJ Bailey, S Coe, DM Grant, GW Grime, C Jeynes (2009)Accurate determination of the Ca : P ratio in rough hydroxyapatite samples by SEM-EDS, PIXE and RBS - a comparative study, In: X-RAY SPECTROMETRY38(4)pp. 343-347 JOHN WILEY & SONS LTD
E WENDLER, RJ WILSON, C JEYNES, W WESCH, K GARTNER, RM GWILLIAM, BJ SEALY (1995)2 MEV AS+ IMPLANTATION IN INAS, In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS96(1-2)pp. 298-301
RMA PEEL, D MILLEN, C JEYNES, RP WEBB (1994)TRANSPUTERS IN A DISTRIBUTED DATA-COLLECTION SYSTEM FOR MEV ION MICROBEAM ANALYSIS, In: PROGRESS IN TRANSPUTER AND OCCAM RESEARCH38pp. 87-97
A Simon, C Jeynes, RP Webb, R Finnis, Z Tabatabian, PJ Sellin, MBH Breese, DF Fellows, R van den Broek, RM Gwilliam (2004)The new Surrey ion beam analysis facility, In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS219pp. 405-409 ELSEVIER SCIENCE BV
A Gurbich, I Bogdanovic-Radovic, M Chiari, C Jeynes, M Kokkoris, AR Ramos, M Mayer, E Rauhala, O Schwerer, S Liqun, I Vickridge (2008)Status of the problem of nuclear cross section data for IBA, In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS266(8)pp. 1198-1202
P MUTTI, Z SKLAR, GAD BRIGGS, C JEYNES (1995)ELASTIC PROPERTIES OF GAAS DURING AMORPHIZATION BY ION-IMPLANTATION, In: JOURNAL OF APPLIED PHYSICS77(6)pp. 2388-2392 AMER INST PHYSICS
OB AJAYI, MS AKANNI, JN LAMBI, C JEYNES, JF WATTS (1990)COMPOSITIONAL STUDIES OF VARIOUS METAL-OXIDE COATINGS ON GLASS, In: THIN SOLID FILMS185(1)pp. 123-136 ELSEVIER SCIENCE SA LAUSANNE
JJ Hamilton, EJH Collart, B Colombeau, C Jeynes, M Bersani, D Giubertoni, JA Sharp, NEB Cowern, KJ Kirkby (2005)Electrical activation of solid-phase epitaxially regrown ultra-low energy boron implants in Ge preamorphised silicon and SOI, In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS237(1-2)pp. 107-112
PM Jenneson, AS Clough, R Hollands, MJ Mulheron, C Jeynes (1998)Profiling chlorine diffusion into ordinary Portland cement and pulverized fuel ash pastes using scanning MeV proton micro-PIXE, In: Journal of Materials Science Letters17pp. 1173-1175
R Unterumsberger, P Hönicke, Julien Colaux, Christopher Jeynes, M Wansleben, M Müller, B Beckhoff (2018)Accurate experimental determination of Gallium K- and L3-shell XRF fundamental parameters, In: Journal of Analytical Atomic Spectrometry33pp. 1003-1013 Royal Society of Chemistry

The fluorescence yield of the K- and L3-shell of gallium was determined using the radiometrically calibrated (reference-free) X-ray fluorescence instrumentation at the BESSY II synchrotron radiation facility. Simultaneous transmission and fluorescence signals from GaSe foils were obtained, resulting in K- and L3-shell fluorescence yield values (ωGa,K = 0.515 ± 0.019, ωGa,L3 = 0.013 ± 0.001) consistent with existing database values. For the first time, these standard combined uncertainties are obtained from a properly constructed Uncertainty Budget. These K-shell fluorescence yield values support Bambynek’s semi-empirical compilation from 1972: these and other measurements yield a combined recommended value of ωGa,K = 0.514 ± 0.010. Using the measured fluorescence yields together with production yields from reference Ga-implanted samples where the quantity of implanted Ga was determined at 1.3% traceable accuracy by Rutherford backscattering spectrometry, the K-shell and L3-subshell photoionization cross sections at selected incident photon energies were also determined and compared critically with the standard databases.

C Jeynes, MJ Bailey, NJ Bright, ME Christopher, GW Grime, BN Jones, VV Palitsin, RP Webb (2012)"total IBA" - Where are we?, In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms271pp. 107-118 Elsevier

The suite of techniques which are available with the small accelerators used for MeV ion beam analysis (IBA) range from broad beams, microbeams or external beams using the various particle and photon spectrometries (including RBS, EBS, ERD, STIM, PIXE, PIGE, NRA and their variants), to tomography and secondary particle spectrometries like MeV-SIMS. These can potentially yield almost everything there is to know about the 3-D elemental composition of types of samples that have always been hard to analyse, given the sensitivity and the spacial resolution of the techniques used. Molecular and chemical information is available in principle with, respectively, MeV-SIMS and high resolution PIXE. However, these techniques separately give only partial information – the secret of “Total IBA” is to find synergies between techniques used simultaneously which efficiently give extra information. We here review how far “Total IBA” can be considered already a reality, and what further needs to be done to realise its full potential.

C Jeynes, NP Barradas (2009)Pitfalls in Ion Beam Analysis, In: Handbook of Modern Ion Beam Materials Analysis(15)pp. 347-383 Materials Research Society

Accurate elemental depth profiling by IBA is of great value to many modern thin-film technologies. IBA is a quantitative analytical technique now capable of traceable accuracy below 1%. In this chapter we describe sources of errors in data collection and analysis (pitfalls) greater than about 1/4%.

GG Rozenberg, E Bresler, SP Speakman, C Jeynes, JHG Steinke (2002)Patterned low temperature copper-rich deposits using inkjet printing, In: APPLIED PHYSICS LETTERS81(27)pp. 5249-5251 AMER INST PHYSICS
AJ DANN, MR FAHY, C JEYNES, MR WILLIS (1986)IODINE IMPLANTATION OF POLYMERIC PHTHALOCYANINES, In: JOURNAL OF PHYSICS D-APPLIED PHYSICS19(11)pp. L217-L224 IOP PUBLISHING LTD
VK RAMAN, F MAHMOOD, RA MCMAHON, H AHMED, C JEYNES, KW HUTT, N COOPER, DJ GODFREY (1988)CHARACTERIZATION OF RAPID ELECTRON-BEAM ANNEALED THIN TITANIUM SILICIDE FILMS, In: JOURNAL OF THE ELECTROCHEMICAL SOCIETY135(3)pp. C125-C125 ELECTROCHEMICAL SOC INC

© 1989 Springer-Verlag Heidelberg. © 1989 Springer-Verlag Bcrbn Heidelberg. All Rights Reserved.This paper correlates photodisplacement thermal wave characterization of ion implanted silicon wafers with the lattice information provided by Rutherford Backscattering Spectrometry.

AP MATTHEWS, C JEYNES, KJ REESON, J THORNTON, NM SPYROU (1992)QUANTIFICATION OF THE SEPARATE MATRIX CONSTITUENTS OF SPHEROIDAL GRAPHITE CAST-IRON IMPLANTED WITH N-15 BY NUCLEAR-REACTION ANALYSIS USING AN ION MICROPROBE, In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS64(1-4)pp. 452-456 ELSEVIER SCIENCE BV
KE PUTTICK, C JEYNES, M RUDMAN, AE GEE, CL CHAO (1992)SURFACE DAMAGE IN NANOMACHINED SILICON, In: SEMICONDUCTOR SCIENCE AND TECHNOLOGY7(2)pp. 255-259 IOP PUBLISHING LTD
N BIBIC, M MILOSAVLJEVIC, D PERUSKO, Y SERRUYS, C JEYNES (1992)ION-BEAM INDUCED MIXING IN PD THIN-FILMS ON SILICON, In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS67(1-4)pp. 500-503
SH Winston, RM Gwilliam, BJ Sealy, G Boudreault, C Jeynes, RP Webb, KJ Kirkby (2003)Evaluation of the Boron activation and depth distribution using BBr2+ implants, In: IIT2002: ION IMPLANTATION TECHNOLOGY, PROCEEDINGSpp. 115-118
V Paneta, JL Colaux, AF Gurbich, C Jeynes, M Kokkoris (2014)Benchmarking experiments for the proton backscattering on Na-23, P-31 and S-nat up to 3.5 MeV, In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS328pp. 1-7 ELSEVIER SCIENCE BV
C Jeynes, G Zoppi, I Forbes, MJ Bailey, N Peng (2009)Characterisation of thin film chalcogenide PV materials using MeV ion beam analysis, In: 2009 INTERNATIONAL CONFERENCE ON SUSTAINABLE POWER GENERATION AND SUPPLY, VOLS 1-4pp. 1294-1299
C Jeynes, NP Barradas, E Szilágyi (2012)Accurate Determination of Quantity of Material in Thin Films by Rutherford Backscattering Spectrometry, In: Analytical Chemistry84pp. 6061-6069

Ion beam analysis (IBA) is a cluster of techniques including Rutherford and non-Rutherford backscattering spectrometry, and particle-induced X-ray emission (PIXE). Recently, the ability to treat multiple IBA techniques (including PIXE) self-consistently has been demonstrated. The utility of IBA for accurately depth profiling thin films is critically reviewed. As an important example of IBA, three laboratories have independently measured a silicon sample implanted with a fluence of nominally 5.1015As/cm2 at an unprecedented absolute accuracy. Using 1.5 MeV 4He+ Rutherford backscattering spectrometry (RBS), each lab has demonstrated a combined standard uncertainty around 1% (coverage factor k=1) traceable to an Sb-implanted certified reference material through the silicon electronic stopping power. The uncertainty budget shows that this accuracy is dominated by the knowledge of the electronic stopping, but that special care must also be taken to accurately determine the electronic gain of the detection system and other parameters. This RBS method is quite general and can be used routinely, to accurately validate ion implanter charge collection systems, to certify SIMS standards, and for other applications. The generality of application of such methods in IBA is emphasised: if RBS and PIXE data are analysed self-consistently then the resulting depth profile inherits the accuracy and depth resolution of RBS and the sensitivity and elemental discrimination of PIXE.

N Kozanecki, W Jantsch, W Heis, G Prechtl, BJ Sealy, C Jeynes (1997)Infrared luminescence in Er and Er+O implanted 6H SiC, In: ACTA PHYSICA POLONICA A92(5)pp. 879-882
MG Blamire, DJ Kang, G Burnell, NH Peng, R Webb, C Jeynes, JH Yun, SH Moon, B Oh (2002)Masked ion damage and implantation for device fabrication, In: VACUUM69(1-3)pp. 11-15
NP Barradas, C Jeynes, RP Webb (1997)Simulated annealing analysis of Rutherford backscattering data, In: APPLIED PHYSICS LETTERS71(2)pp. 291-293 AMER INST PHYSICS
AC KIMBER, C JEYNES (1987)AN APPLICATION OF THE TRUNCATED 2-PIECE NORMAL-DISTRIBUTION TO THE MEASUREMENT OF DEPTHS OF ARSENIC IMPLANTS IN SILICON, In: JOURNAL OF THE ROYAL STATISTICAL SOCIETY SERIES C-APPLIED STATISTICS36(3)pp. 352-357 WILEY-BLACKWELL
BJ SEALY, BL TAN, RM GWILLIAM, KJ REESON, C JEYNES (1989)RESISTIVITY OF ION-BEAM SYNTHESIZED COSI2, In: ELECTRONICS LETTERS25(22)pp. 1532-1533 IEE-INST ELEC ENG
J RENNIE, S ELLIOTT, C JEYNES (1986)RUTHERFORD BACKSCATTERING STUDY OF THE PHOTODISSOLUTION OF AG IN AMORPHOUS GESE2, In: APPLIED PHYSICS LETTERS48(21)pp. 1430-1432 AMER INST PHYSICS
MJ Merchant, P Mistry, M Browton, AS Clough, FE Gauntlett, C Jeynes, KJ Kirkby, GW Grime (2005)Characterisation of the University of Surrey Ion Beam Centre in-air scanning microbeam, In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS231pp. 26-31
KM BRUNSON, D SANDS, CB THOMAS, C JEYNES, JF WATTS (1990)COMPOSITION AND STRUCTURE OF SEMI-INSULATING POLYCRYSTALLINE SILICON THIN-FILMS, In: PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES61(3)pp. 361-376 TAYLOR & FRANCIS LTD
C Jeynes, ZH Jafri, RP Webb, AC Kimber, MJ Ashwin (1997)Accurate RBS measurements of the indium content of InGaAs thin films, In: SURFACE AND INTERFACE ANALYSIS25(4)pp. 254-260 JOHN WILEY & SONS LTD
MP SEAH, D DAVID, JA DAVIES, TE JACKMAN, C JEYNES, C ORTEGA, PM READ, CJ SOFIELD, G WEBER (1988)AN INTERCOMPARISON OF ABSOLUTE MEASUREMENTS OF THE OXYGEN AND TANTALUM THICKNESS OF TANTALUM PENTOXIDE REFERENCE MATERIALS, BCR 261, BY 6 LABORATORIES, In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS30(2)pp. 140-151 ELSEVIER SCIENCE BV
L Xu, PJ McNally, GDM Dilliway, NEB Cowern, C Jeynes, E Mendoza, P Ashburn, DM Bagnall (2005)Raman study of the strain and H-2 preconditioning effect on self-assembled Ge island on Si (001), In: JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS16(7)pp. 469-474
K REESON, A DEVEIRMAN, R GWILLIAM, C JEYNES, B SEALY, J VANLANDUYT (1989)TEM AND RBS STUDIES OF EPITAXIAL COSI2 LAYERS FORMED BY HIGH-DOSE COBALT IMPLANTATION INTO SILICON, In: INST PHYS CONF SER(100)pp. 627-634 IOP PUBLISHING LTD

Buried layers of CoSi2 have been fabricated by implanting high doses of energetic Co atoms, into single crystal (100) silicon substrates maintained at approximately 550-degrees-C. For doses greater-than-or-equal-to 4 x 10(17) Co-59+ cm-2, at 350 keV, a continuous buried layer of CoSi2 grows epitaxially during implantation. For lower doses the 'as implanted' structure is discontinuous and consists of discrete precipitates of both A- and B- type CoSi2. After annealing at 1000-degrees-C for 30 minutes a continuous buried layer of stoichiometric CoSi2 is produced for doses greater-than-or-equal-to 2 x 10(17) Co-59+ cm-2, at 200 keV and greater-than-or-equal-to 4 x 10(17) Co-59+ cm-2, at 350 keV. For lower doses the synthesised layer is discontinuous and consists of discrete octahedral CoSi2 precipitates which are aligned with the matrix (A-type).

AS FAROOQI, W ARSHED, OA AKANLE, C JEYNES, NM SPYROU (1992)FLUORINE DETERMINATION IN DIET SAMPLES USING CYCLIC INAA AND PIGE ANALYSIS, In: JOURNAL OF RADIOANALYTICAL AND NUCLEAR CHEMISTRY-ARTICLES161(1)pp. 71-78 AKADEMIAI KIADO
NP Barradas, C Jeynes, Y Kusano, JE Evetts, IM Hutchings (1999)RBS/simulated annealing and FTIR characterisation of BCN films deposited by dual cathode magnetron sputtering, In: APPLICATION OF ACCELERATORS IN RESEARCH AND INDUSTRY, PTS 1 AND 2475pp. 504-507
IG STOEV, RA YANKOV, C JEYNES (1989)FORMATION OF ETCH-STOP STRUCTURES UTILIZING ION-BEAM SYNTHESIZED BURIED OXIDE AND NITRIDE LAYERS IN SILICON, In: SENSORS AND ACTUATORS19(2)pp. 183-197 ELSEVIER SCIENCE SA LAUSANNE
KR STRICKLAND, SC EDWARDS, JK WIGMORE, RA COLLINS, C JEYNES (1992)STUDY OF ION-IMPLANTATION AND ANNEALING EFFECTS IN SILICON-WAFERS USING HIGH-FREQUENCY PHONON-SCATTERING, In: SURFACE AND INTERFACE ANALYSIS18(8)pp. 631-636 WILEY-BLACKWELL
YS TANG, CDW WILKINSON, C JEYNES (1992)PD/TI BILAYER CONTACTS TO HEAVILY DOPED POLYCRYSTALLINE SILICON, In: JOURNAL OF APPLIED PHYSICS72(1)pp. 311-312 AMER INST PHYSICS
A Tzitzinou, JL Keddie, C Jeynes, M Mulder, J Geurts, KE Treacher, R Satguru, P Zhdan (1999)Molecular weight effects on film formation of latex and surfactant morphology., In: ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY218pp. U609-U609 AMER CHEMICAL SOC
DJ DUNSTAN, RH DIXON, P KIDD, LK HOWARD, VA WILKINSON, JD LAMBKIN, C JEYNES, MP HALSALL, D LANCEFIELD, MT EMENY, PJ GOODHEW, KP HOMEWOOD, BJ SEALY, AR ADAMS (1993)GROWTH AND CHARACTERIZATION OF RELAXED EPILAYERS OF INGAAS ON GAAS, In: JOURNAL OF CRYSTAL GROWTH126(4)pp. 589-600 ELSEVIER SCIENCE BV
GDM Dilliway, NEB Cowern, C Jeynes, L O'Reilly, PJ McNally, DM Bagnall (2003)Structural and compositional evolution of self-assembled germanium islands on silicon (001) during high growth rate LPCVD, In: Materials Research Society Symposium - Proceedings775pp. 275-280

Understanding the process of self-organization of Ge nanostructures on Si with controlled size distribution is a key requirement for their application to devices. In this study, we investigate the temporal evolution of self-assembled islands during the low pressure chemical vapour deposition (LPCVD) of Ge on Si at 650°C using high growth rates (6-9 nm/min). The islands were characterized by atomic force microscopy, transmission electron microscopy, Rutherford backscattering spectrometry and micro-Raman spectroscopy. We found that the first nanostructures to assemble were small islands, with a narrow size distribution, typical of the 'lens-shaped' structures reported in previous studies. Next to form were a population of larger 'lens-shaped' islands with a similar surface density to that of the small islands, but with broad height and width distributions. These islands differ from the pyramid-shaped islands previously reported for a similar size range. On further Ge deposition, the population evolves into one of large square-based truncated pyramids with a very narrow size distribution. Such pyramidal structures were previously reported at smaller sizes. Furthermore, we see no evidence of the multifaceted domes previously reported in this size range. The small 'lens-shaped' islands appear to be strained, whilst some of the intermediate-sized islands and all the large truncated pyramids contain misfit strain relaxation induced defects. Additionally, in the both the intermediate size 'lens-shaped' islands and in the large size truncated pyramidal islands, there is evidence of Si-Ge strain-induced alloying, more significant in the first than in the latter. Our observation of 'lens shaped' islands and truncated pyramids at larger sizes than are normally observed, suggests a kinetically driven process that delays the evolution of energetically favourable island structures until larger island sizes are reached.

A Nejim, C Jeynes, Q Zhao, H Muller-Steinhagen (1999)Ion implantation of stainless steel heater alloys for anti-fouling applications, In: Proceedings of the International Conference on Ion Implantation Technology2pp. 869-872

Ion implantation of fluorine and silicon ions into stainless steel heater alloys inhibits the accumulation of CaSO4 deposits when used in an saturated aqueous solution of 1.6 g/l concentration. This anti-fouling action leads to an increase in the heat transfer coefficient by more than 100% under a heat flux of 200 kW/m2 and 200% under a heat flux of 100 kW/m2 when compared to unimplanted heater elements. Heat transfer data indicate that following a heating cycle of 4000 minutes a thick layer of CaSO4 deposit remain on unimplanted heater surfaces. Similar CaSO4 deposits also formed on the implanted alloys initially but did not remain after 1000 minutes causing a significant recovery in the heat transfer coefficient. Ion implanting these alloys leads to surface energy reduction and hence the anti-fouling action observed.

E Aramendia, J Mallegol, C Jeynes, MJ Barandiaran, JL Keddie, JM Asua (2003)Distribution of surfactants near acrylic latex film surfaces: A comparison of conventional and reactive surfactants (surfmers), In: LANGMUIR19(8)pp. 3212-3221 AMER CHEMICAL SOC
C Jeynes, KE Puttick, LC Whitmore, K Gartner, AE Gee, DK Millen, RP Webb, RMA Peel, BJ Sealy (1996)Laterally resolved crystalline damage in single-point-diamond-turned silicon, In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS118(1-4)pp. 431-436 ELSEVIER SCIENCE BV
A KOZANECKI, M CHAN, C JEYNES, B SEALY, K HOMEWOOD (1991)LATTICE LOCATION OF ERBIUM IMPLANTED INTO GAAS, In: SOLID STATE COMMUNICATIONS78(8)pp. 763-766 PERGAMON-ELSEVIER SCIENCE LTD
P Mistry, I Gornez-Morilla, GW Grime, R Webb, C Jeynes, R Gwilliam, A Cansell, M Merchant, KJ Kirkby (2005)New developments on the Surrey microbeam applications to lithography, In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS231pp. 428-432
M.C. Parker, C. Jeynes (2019)Maximum Entropy (Most Likely) Double Helical and Logarithmic Spiral Trajectories in Space-Time, In: Scientific Reports Nature Research

The ubiquity of double helical and logarithmic spirals in nature is well observed, but no explanation is ever offered for their prevalence. DNA and the Milky Way galaxy are examples of such structures, whose geometric entropy we study using an information-theoretic (Shannon entropy) complex-vector analysis to calculate, respectively, the Gibbs free energy difference between B-DNA and P-DNA, and the galactic virial mass. Both of these analytic calculations (without any free parameters) are consistent with observation to within the experimental uncertainties. We define conjugate hyperbolic space and entropic momentum co-ordinates to describe these spiral structures in Minkowski space-time, enabling a consistent and holographic Hamiltonian-Lagrangian system that is completely isomorphic and complementary to that of conventional kinematics. Such double spirals therefore obey a maximum-entropy path-integral variational calculus (“the principle of least exertion”, entirely comparable to the principle of least action), thereby making them the most likely geometry (also with maximal structural stability) to be adopted by any such system in space-time. These simple analytical calculations are quantitative examples of the application of the Second Law of Thermodynamics as expressed in geometric entropy terms. They are underpinned by a comprehensive entropic action (“exertion”) principle based upon Boltzmann’s constant as the quantum of exertion.

PK Marriott, M Jenkin, C Jeynes, NP Barradas, RP Webb, BJ Sealy (1999)Rapid accurate automated analysis of complex ion beam analysis data, In: APPLICATION OF ACCELERATORS IN RESEARCH AND INDUSTRY, PTS 1 AND 2475pp. 592-595
JA Sharp, RM Gwilliam, BJ Sealy, C Jeynes, JJ Hamilton, KJ Kirkby (2005)Comparison of elemental boron and boron halide implants into silicon, In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS237(1-2)pp. 93-97
NM SPYROU, W ARSHED, AS FAROOQI, GI IBEANU, OA AKANLE, C JEYNES, OI ASUBIOJO, IB OBIOH, EA OLUYEMI, AF OLUWOLE (1992)USEFULNESS OF NUCLEAR AND ATOMIC-BASED ANALYSIS TECHNIQUES IN AIR-POLLUTION STUDIES IN NIGERIA, In: JOURNAL OF RADIOANALYTICAL AND NUCLEAR CHEMISTRY-ARTICLES161(1)pp. 189-199 AKADEMIAI KIADO
PLF HEMMENT, BJ SEALY, KG STEPHENS, JE MYNARD, C JEYNES, MD BROWTON, RJ WILSON, MX MA, A CANSELL, DJW MOUS, R KOUDIJS (1993)A 2-MV HEAVY-ION VANDEGRAAFF IMPLANTER FOR RESEARCH-AND-DEVELOPMENT, In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS74(1-2)pp. 27-31
M Murtagh, JT Beechinor, PAF Herbert, PV Kelly, GM Crean, C Jeynes (1994)Photoreflectance characterization of reactive ion etched silicon, In: Materials Research Society Symposium Proceedings324pp. 167-173

Reactive ion etching (RIE) of p-type 2-3 Ωcm resistivity silicon (100) was characterized using Photoreflectance (PR), Rutherford Backscattering Spectrometry (RBS) and Spectroscopic Ellipsometry (SE). Isochronal (5 minutes) etching was performed at various DC etch biases (0-500 V) using a SiCl4 etch chemistry. The substrate etch rate dependence on applied bias was determined using mechanical profilometry. A distinct shift in the Λ3-Λ1 Si transition and significant spectral broadening of the room temperature PR spectra was observed as a function of etch bias. Photoreflectance results are correlated with RBS, SE and etch rate analysis. It is demonstrated that the PR spectra reflect a complex, competitive, plasma-surface interaction during the RIE process.

RP Webb, SH Winston, RM Gwilliam, BJ Sealy, G Boudreault, C Jeynes, KJ Kirkby (2003)Comparison of boron halide, decaborane and B implants in Si from molecular dynamics simulations, In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS202pp. 143-148
VK RAMAN, F MAHMOOD, RA MCMAHON, H AHMED, C JEYNES, D SARKAR (1989)RAPID ELECTRON-BEAM INDUCED TANTALUM SILICON REACTIONS, In: APPLIED SURFACE SCIENCE36(1-4)pp. 654-663 ELSEVIER SCIENCE BV
M MURTAGH, GM CREAN, T FLAHERTY, C JEYNES (1992)SENSITIVITY OF A MODULATED OPTICAL REFLECTANCE PROBE TO PROCESS-INDUCED LATTICE DISORDER, In: APPLIED SURFACE SCIENCE54pp. 497-501
GDM Dilliway, DM Bagnall, NEB Cowern, C Jeynes (2003)Self-assembled germanium islands grown on (001) silicon substrates by low-pressure chemical vapor deposition, In: JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS14(5-7)pp. 323-327
K Puttick, C Jeynes, T Gee (1998)Surface amorphization of machined silicon, In: PROCEEDINGS OF: SILICON MACHININGpp. 15-18
VK RAMAN, F MAHMOOD, RA MCMAHON, H AHMED, C JEYNES (1988)RAPID ELECTRON-BEAM REACTED TANTALUM TITANIUM BILAYERS ON SILICON, In: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS27(12)pp. 2333-2339 JAPAN J APPLIED PHYSICS
LS Riley, S Hall, J Harris, J Fernandez, B Gallas, AGR Evans, JF Clarke, J Humphrey, RT Murray, C Jeynes (1999)SiGe nMOSFETs with gate oxide grown by low temperature plasma anodisation, In: MICROELECTRONIC ENGINEERING48(1-4)pp. 227-230
GDM Dilliway, NEB Cowern, L Xu, PJ McNally, C Jeynes, E Mendoza, P Ashburn, DM Bagnall (2004)Influence of H2 preconditioning on the nucleation and growth of self-assembled germanium islands on silicon (001), In: Materials Research Society Symposium Proceedings820pp. 351-356

Understanding the effects of growth conditions on the process of self-organisation of Ge nanostructures on Si is a key requirement for their practical applications. In this study we investigate the effect of preconditioning with a high-temperature hydrogenation step on the nucleation and subsequent temporal evolution of Ge self-assembled islands on Si (001). Two sets of structures, with and without H2 preconditioning, were grown by low pressure chemical vapour deposition (LPCVD) at 650°C. Their structural and compositional evolution was characterised by Rutherford backscattering spectrometry (RBS), atomic force microscopy (AFM) and micro-Raman (μRaman) spectroscopy. In the absence of preconditioning, we observe the known evolution of self-assembled Ge nanostructures on Si (001), from small islands with a narrow size distribution, to a bimodal size distribution, through to large islands. Surface coverage and island size increase steadily as a function of deposition time. On the H2 preconditioned surface, however, both nucleation rates and surface coverage are greatly increased during the early stages of self-assembly. After the first five seconds, the density of the islands is twice that on the unconditioned surface, and the mean island size is also larger, but the subsequent evolution is much slower than in the case of the unconditioned surface. This retardation correlates with a relatively high measured stress within the islands. Our results demonstrate that standard processes used during growth, like H2 preconditioning, can yield dramatic changes in the uniformity and distribution of Ge nanostructures self-assembled on Si. © 2004 Materials Research Society.

F MAHMOOD, H AHMED, C JEYNES, WP GILLIN (1992)REACTIVE FORMATION OF COBALT SILICIDE ON SINGLE-CRYSTAL SILICON UNDER RAPID ELECTRON-BEAM HEATING, In: APPLIED SURFACE SCIENCE59(1)pp. 55-62 ELSEVIER SCIENCE BV
AC Kimber, C Jeynes (1987)APPLICATION OF THE TRUNCATED TWO-PIECE NORMAL DISTRIBUTION TO THE MEASUREMENT OF DEPTHS OF ARSENIC IMPLANTS IN SILICON., In: Journal of the Royal Statistical Society. Series C: Applied Statistics36(3)pp. 352-357

The truncated two-piece normal distribution is applied to data obtained from backscattering experiments in order to investigate the depth of arsenic implants in silicon.

A Nejim, RM Gwilliam, NG Emerson, AP Knights, F Cristiano, NP Barradas, C Jeynes (1999)Electrical behaviour associated with defect tails in germanium implanted silicon, In: Proceedings of the International Conference on Ion Implantation Technology1pp. 506-509

In this study the impact of the defect tails generated by germanium implantation into n-type silicon wafers on the deep energy states, the doping profiles and mobilities, are investigated. 100 mm (100) silicon wafers with a base doping concentration of 3×1015/cm3 have been Implanted with 80 keV germanium on the Danfysik DF1090 high current implanter using instantaneous current density of 5 μA/cm2-95 μA/cm2, which correspond to power loading values of 0.4 and 7.6 W/cm2 respectively. Channelling Rutherford Backscattering analysis of a wafer implanted with 1×1016 Ge/cm2 and a dose rate of 80 μA/cm2 indicates a defect tail extending to 0.65 μm compared with 0.35 μm from a similar implant using 20 μA/cm2. Deep Level Transient Spectroscopy (DLTS) measurements of samples implanted with 3×1014 Ge/cm2 followed by a regrowth anneal of 700 °C for 20 mins reveal a high concentration of deep levels beyond the projected range of germanium of 58 nm at depths extending from 0.15 μm to depths greater than 0.4 μm. The main peak indicate a deep level at 0.35 eV. The increase in the dose rate from 5 μA/cm2 to 95 μA/cm2 is accompanied by a 5 times reduction of the 0.35 eV trap concentration. This difference could be attributed to the dynamic annealing effects during the implant using 95 μA/cm2.

JA Sharp, RM Gwilliam, BJ Sealy, C Jeynes, JJ Hamilton, KJ Kirkby (2005)Evaluation of BBr2+ and B++Br+ implants in silicon, In: MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY124pp. 196-199
JW Taylor, AS Saleh, PC Rice-Evans, AP Knights, C Jeynes (1999)Depth profiling of defects in nitrogen implanted silicon using a slow positron beam, In: APPLIED SURFACE SCIENCE149(1-4)pp. 175-180
BJ Sealy, AJ Smith, T Alzanki, N Bennett, L Li, C Jeynes, B Colombeau, EJH Collart, NG Emerson, RM Gwilliam, NEB Cowern (2006)Shallow junctions in silicon via low thermal budget processing, In: Extended Abstracts of the Sixth International Workshop on Junction Technology, IWJT '06pp. 10-15
U BANGERT, C JEYNES, P GOODHEW, IH WILSON (1984)DAMAGE EFFECTS IN SILICON AND MNOS STRUCTURES CAUSED BY BEAMS OF IONIZED AND NEUTRAL ARGON ATOMS WITH ENERGIES BELOW 5 KEV, In: VACUUM34(1-2)pp. 163-166 PERGAMON-ELSEVIER SCIENCE LTD
C Jeynes, NP Barradas, RP Webb (1997)DataFurnace for Ion Beam Analysis University of Surrey Ion Beam Centre

Code for extracting elemental depth profiles from IBA data, including Rutherford and non-Rutherford elastic scattering, nuclear reaction analysis, and particle induced X-ray emission. Designed for self-consistent fits of multiple spectra in large datasets. Validated by IAEA intercomparison, and many peer reviewed publications.

OB Ajayi, OK Osuntola, IA Ojo, C Jeynes (1994)Preparation and characterization of MOCVD thin films of cadmium sulphide, In: Thin Solid Films248(1)pp. 57-62

A film of stoichiometric cadmium sulphide on quartz substrate was deposited by pyrolysis from bis-(morpholinodithioato-S,S') cadmium (C10H16N2O2S4Cd) (a single source precursor). The band gap of 2.4 eV was confirmed by optical absorption measurements. The stoichiometry and thickness were determined by Rutherford backscattering, and the absence of organic remmants in the film demonstrated by IR spectroscopy. © 1994.

F Kahlmann, WE Booij, MG Blamire, PF McBrien, NH Peng, C Jeynes, EJ Romans, CM Pegrum, EJ Tarte (2001)Performance of high-T-c dc SQUID magnetometers with resistively shunted inductances compared to "unshunted" devices, In: IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY11(1)pp. 916-919
OO Ilori, O Osasona, MA Eleruja, GO Egharevba, GA Adegboyega, G Chiodelli, G Boudreault, C Jeynes, EOB Ajayi (2005)Preparation and characterization of metallorganic chemical vapour deposited molybdenum (II) oxide (MoO) thin films, In: THIN SOLID FILMS472(1-2)pp. 84-89 ELSEVIER SCIENCE SA
M Milosavljevic, N Bibic, D Perusko, C Jeynes, U Bangert (2000)The effects of implanted arsenic on Ti-silicide formation, In: SOLID STATE PHENOMENA71pp. 147-171 TRANS TECH-SCITEC PUBLICATIONS LTD
NP Barradas, N Added, WM Arnoldbik, I Bogdanovic-Radovic, W Bohne, S Cardoso, C Danner, N Dytlewski, PP Freitas, M Jaksic, C Jeynes, C Krug, WN Lennard, S Lindner, C Linsmeier, Z Medunic, P Pelicon, RP Pezzi, C Radtke, J Rohrich, T Sajavaara, TDM Salgado, FC Stedile, MH Tabacniks, I Vickridge (2005)A round robin characterisation of the thickness and composition of thin to ultra-thin AlNO films, In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS227(3)pp. 397-419 ELSEVIER SCIENCE BV
AR Peaker, JH Evans-Freeman, PYY Kan, ID Hawkins, J Terry, C Jeynes, L Rubaldo (2000)Vacancy-related defects in ion implanted and electron irradiated silicon, In: MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY71pp. 143-147
C Jeynes, NP Barradas, H Rafla-Yuan, BP Hichwa, R Close (2000)Accurate depth profiling of complex optical coatings, In: SURFACE AND INTERFACE ANALYSIS30(1)pp. 237-242 WILEY-BLACKWELL
OO Ilori, O Osasona, MA Eleruja, GO Egharevba, GA Adegboyega, G Chiodelli, G Boudreault, C Jeynes, EOB Ajayi (2005)Preparation and characterization of metallorganic chemical vapour deposited LixMoyOz using a single source solid precursor, In: IONICS11(5-6)pp. 387-392 INST IONICS
F Kahlmann, WE Booij, MG Blamire, PF McBrien, EJ Tarte, NH Peng, C Jeynes, EJ Romans, CM Pegrum (2000)Transfer function and noise properties of YBa2Cu3O7-delta direct-current superconducting-quantum-interference-device magnetometers with resistively shunted inductances, In: APPLIED PHYSICS LETTERS77(4)pp. 567-569 AMER INST PHYSICS
C Jeynes, RP Webb, A Lohstroh (2011)Ion Beam Analysis: A Century of Exploiting the Electronic and Nuclear Structure of the Atom for Materials Characterisation, In: Reviews of Accelerator Science and Technology4pp. 41-82 World Scientific

Analysis using MeV ion beams is a thin film characterisation technique invented some 50 years ago which has recently had the benefit of a number of important advances. This review will cover damage profiling in crystals including studies of defects in semiconductors, surface studies, and depth profiling with sputtering. But it will concentrate on thin film depth profiling using Rutherford backscattering, particle induced X-ray emission and related techniques in the deliberately synergistic way that has only recently become possible. In this review of these new developments, we will show how this integrated approach, which we might call “total IBA”, has given the technique great analytical power.

JCG Jeynes, C Jeynes, MJ Merchant, KJ Kirkby (2013)Measuring and modelling cell-to-cell variation in uptake of gold nanoparticles, In: RSC Analyst(138)pp. 7070-7074 RSC

The cell-to-cell variation of gold nanoparticle (GNP) uptake is important for therapeutic applications. We directly counted the GNPs in hundreds of individual cells, and showed that the large variation from cell-to-cell could be directly modelled by assuming log-normal distributions of both cell mass and GNP rate of uptake. This was true for GNPs non-specifically bound to fetal bovine serum or conjugated to a cell penetrating peptide. Within a population of cells, GNP content varied naturally by a factor greater than 10 between individual cells.

C Jeynes, NP Barradas, JR Wilde, AL Greer (2000)Composition of Ni-Ta-C thick films using simulated annealing analysis of elastic backscattering spectrometry data, In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS161pp. 287-292 ELSEVIER SCIENCE BV
SL Molodtsov, AF Gurbich, C Jeynes (2008)Accurate ion beam analysis in the presence of surface roughness, In: JOURNAL OF PHYSICS D-APPLIED PHYSICS41(20)ARTN 2pp. ?-? IOP PUBLISHING LTD
M Webb, C Jeynes, R Gwilliam, P Too, A Kozanecki, J Domagala, A Royle, B Sealy (2005)The influence of the ion implantation temperature and the dose rate on smart-cut (c) in GaAs, In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS240(1-2)pp. 142-145 ELSEVIER SCIENCE BV
JG Analytis, A Ardavan, SJ Blundell, RL Owen, EF Garman, Christopher Jeynes, BJ Powell (2006)Effect of irradiation-induced disorder on the conductivity and critical temperature of the organic superconductor kappa-(BEDT-TTF)(2)Cu(SCN)(2), In: PHYSICAL REVIEW LETTERS96(17)ARTN 1pp. ?-? AMERICAN PHYSICAL SOC

We have introduced defects into clean samples of the organic superconductor -BEDTTTF 2CuSCN2 in order to determine their effect on the temperature dependence of the interlayer conductivity and the critical temperature Tc. We find a violation of Matthiessen’s rule that can be explained by a model of involving a defect-assisted interlayer channel which acts in parallel with the bandlike conductivity. We observe an unusual dependence of Tc on residual resistivity, inconsistent with the generalized Abrikosov-Gor’kov theory for an order parameter with a single component, providing an important constraint on models of the superconductivity in this material.

M MILOSAVLJEVIC, N BIBIC, D PERUSKO, IH WILSON, C JEYNES (1990)PROCESSING OF TIN/TI METALLIZATION ON SILICON BY ARSENIC ION-IMPLANTATION, In: SURFACE & COATINGS TECHNOLOGY43-4(1-3)pp. 996-1006
MC Stennett, NC Hyatt, DP Reid, ER Maddrell, N Peng, C Jeynes, KJ Kirkby, JC Woicik, B Ravel (2009)Heavy ion implantation combined with grazing incidence X-ray absorption spectroscopy (GIXAS): A new methodology for the characterisation of radiation damage in nuclear ceramics, In: MRS Proceedings1193pp. 67-72

An understanding of the effect of cumulative radiation damage on the integrity of ceramic wasteforms for plutonium and minor actinide disposition is key to the scientific case for safe disposal. Alpha recoil due to the decay of actinide species leads to the amorphisation of the initially crystalline host matrix, with potentially deleterious consequences such as macroscopic volume swelling and reduced resistance to aqueous dissolution. For the purpose of laboratory studies the effect of radiation damage can be simulated by various accelerated methodologies. The incorporation of short-lived actinide isotopes accurately reproduces damage arising from both alpha-particle and the heavy recoil nucleus, but requires access to specialist facilities. In contrast, fast ion implantation of inactive model ceramics effectively simulates the heavy recoil nucleus, leading to amorphisation of the host crystal lattice over very short time-scales. Although the resulting materials are easily handled, quantitative analysis of the resulting damaged surface layer has proved challenging. In this investigation, we have developed an experimental methodology for characterisation of radiation damaged structures in candidate ceramics for actinide disposition. Our approach involves implantation of bulk ceramic samples with 2 MeV Kr+ ions, to simulate heavy atom recoil; combined with grazing incidence X-ray absorption spectroscopy (GI-XAS) to characterise only the damaged surface layer. Here we present experimental GI-XAS data acquired at the Ti and Zr K-edges of ion implanted zirconolite, as a function of grazing angle, demonstrating that this technique can be successfully applied to characterise only the amorphised surface layer. Comparison of our findings with data from metamict natural analogues provide evidence that heavy ion implantation reproduces the amorphous structure arising from naturally accumulated radiation damage.

GM CREAN, PD COLE, C JEYNES (1990)RANGE DISTRIBUTIONS OF ION-IMPLANTED BORON, PHOSPHORUS AND ARSENIC DOPANTS IN THERMALLY REACTED TITANIUM SILICIDE THIN-FILMS, In: SOLID-STATE ELECTRONICS33(6)pp. 655-658 PERGAMON-ELSEVIER SCIENCE LTD
JE MYNARD, C JEYNES, J THORNTON, A WAY, R WEBB, D ALBURY, PLF HEMMENT, KG STEPHENS (1985)IMPROVED FACILITIES FOR ION-BEAM SURFACE-ANALYSIS AT THE UNIVERSITY-OF-SURREY, In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS6(1-2)pp. 264-269 ELSEVIER SCIENCE BV
M Webb, C Jeynes, RM Gwilliam, Z Tabatabaian, A Royle, BJ Sealy (2005)The influence of the ion implantation temperature and the flux on smart-cut (c) in GaAs, In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS237(1-2)pp. 193-196 ELSEVIER SCIENCE BV
CHRISTOPHER JEYNES (2021)Ion beam analysis for cultural heritage, In: Spectroscopy, Diffraction and Tomography in Art and Heritage Sciencepp. 335-364 Elsevier Inc

Beams of ions from electrostatic accelerators have long been used by curators, conservators, and archaeologists for deep analysis of the near-surface of cultural heritage samples after simpler methods have been exhausted. Ion beam analysis is a versatile and powerful method with many different imaging and analysis modalities which can be done without sample preparation and which is essentially nondestructive. This introduction is aimed at making users aware of the facilities available at national laboratories and how to use them, including a survey of characteristic and novel cultural heritage applications. The spectrometry modalities include particle-induced luminescence (both X-rays and optical photons), particle elastic and inelastic scattering, and combinations of these. Imaging at high spatial resolution is easy with modern equipment for all the spectrometries. These energetic particle beams are penetrating, allowing fully featured in-air analysis.

A DEVEIRMAN, J VANLANDUYT, KJ REESON, R GWILLIAM, C JEYNES, BJ SEALY (1990)IDENTIFICATION OF COSI INCLUSIONS WITHIN BURIED COSI2 LAYERS FORMED BY ION-IMPLANTATION, In: JOURNAL OF APPLIED PHYSICS68(7)pp. 3792-3794 AMER INST PHYSICS
JL Altrip, AGR Evans, JR Logan, C Jeynes (1990)Towards the limit of ion implantation and rapid thermal annealing as a technique for shallow junction formation, In: European Solid-State Device Research Conferencepp. 221-224

© 1990 IOP Publishing Ltd.High temperature, very short time annealing techniques have been used to study dopant activation during and immediately after solid phase epitaxial regrowth of amorphous layers produced by ion implantation of As into Si. Short annealing timescales have revealed electrically inactive As tails, correlated with a region of implant-induced excess point defects, indicating the formation of stable dopant-interstitial complexes which are not removed during the timescales of these anneals.

Q Zhao, Y Liu, C Wang, S Wang, N Peng, C Jeynes (2008)Reduction of bacterial adhesion on ion-implanted stainless steel surfaces, In: MEDICAL ENGINEERING & PHYSICS30(3)pp. 341-349 ELSEVIER SCI LTD
W Guan, J Ghatak, Y Peng, G Möbus, N Peng, C Jeynes (2011)XTEM characterization of modulated ion implantation through self-organized anodic aluminum oxide (AAO) membranes, In: Materials Research Society Symposium Proceedings1411pp. 49-54

Penetration of a nanochannel mask by 190keV Co ions is tested for the purpose of achieving laterally modulated ion implantation into a SiO thin film on a Si substrate. A 2D-nanoporous membrane of anodic aluminum oxide (AAO) is chosen as the mask. Criteria and challenges for designing the mask are presented. Implantation experiments through a mask with pore diameter of 125 nm and inter-pore distance of 260 nm are carried out. Cross-sectional TEM (XTEM) is shown as an ideal tool to assess depth distribution and lateral distribution of implanted ions at the same time, complemented by Rutherford backscattering spectroscopy. Using energy dispersive x-ray spectroscopy linescans, a Co distribution with lateral modulation is found at 120 nm below the oxide surface. First experiments in converting the atomic distribution of Co to discrete nanoparticles by in-situ TEM annealing are presented. © 2012 Materials Research Society.

EV Yakovlev, RA Talalaev, RW Martin, C Jeynes, N Peng, CJ Deatcher, IM Watson (2006)Modeling and experimental analysis of InGaN MOVPE in the Aixtron AIX 200/4 RF-S horizontal reactor, In: Physica Status Solidi C - Current Topics in Solid State Physics, Vol 3, No 63(6)pp. 1620-1623
L Beck, C Jeynes, NP Barradas (2008)Characterization of paint layers by simultaneous self-consistent fitting of RBS/PIXE spectra using simulated annealing, In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS266(8)pp. 1871-1874 ELSEVIER SCIENCE BV
NM SPYROU, WJ ALTAF, BS GILL, C JEYNES, G NICOLAOU, R PIETRA, E SABBIONI, M SURIAN (1990)FLUORINE CONCENTRATIONS IN BONE-BIOPSY SAMPLES DETERMINED BY PROTON-INDUCED GAMMA-RAY EMISSION AND CYCLIC NEUTRON-ACTIVATION, In: BIOLOGICAL TRACE ELEMENT RESEARCH26-7pp. 161-168 HUMANA PRESS INC
AF Gurbich, C Jeynes (2007)Evaluation of non-Rutherford proton elastic scattering cross-section for magnesium, In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS265(2)pp. 447-452 ELSEVIER SCIENCE BV
MI CURRENT, T GUITNER, N OHNO, K HURLEY, WA KEENAN, W JOHNSON, RJ HILLARD, C JEYNES (1991)MONITORING THE MICRO-UNIFORMITY PERFORMANCE OF A SPINNING DISK IMPLANTER, In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS55(1-4)pp. 173-177
M Milosavljevic, G Shao, RM Gwilliam, C Jeynes, CN McKinty, KP Homewood (2001)Properties of beta-FeSi2 grown by combined ion irradiation and annealing of Fe/Si bilayers, In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS175pp. 309-313
S Hashim, S Al-Ahbabi, DA Bradley, M Webb, C Jeynes, AT Ramli, H Wagiran (2009)The thermoluminescence response of doped SiO2 optical fibres subjected to photon and electron irradiations, In: APPLIED RADIATION AND ISOTOPES67(3)pp. 423-427 PERGAMON-ELSEVIER SCIENCE LTD
CB BALIGA, P TSAKIROPOULOS, C JEYNES (1991)SURFACE CONTAMINATION AND ITS EFFECT ON THE CORROSION OF RAPIDLY SOLIDIFIED MG-AL ALLOY SPLATS, In: JOURNAL OF MATERIALS SCIENCE26(6)pp. 1497-1504 CHAPMAN HALL LTD
T Surkova, A Patane, L Eaves, PC Main, M Henini, A Polimeni, AP Knights, C Jeynes (2001)Indium interdiffusion in annealed and implanted InAs/(AlGa)As self-assembled quantum dots, In: JOURNAL OF APPLIED PHYSICS89(11)pp. 6044-6047 AMER INST PHYSICS
JCG Jeynes, C Jeynes, KJ Kirkby, A Ruemmeli, SRP Silva (2008)RBS/EBS/PIXE measurement of single-walled carbon nanotube modification by nitric acid purification treatment, In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS266(8)pp. 1569-1573 ELSEVIER SCIENCE BV
ZH JAFRI, C JEYNES, RP WEBB, IH WILSON (1990)MASS-TRANSPORT OF SILICON DURING ARGON IRRADIATION EMPLOYING A DOUBLE-MARKER SYSTEM, In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS48(1-4)pp. 457-460 ELSEVIER SCIENCE BV
JL Colaux, C Jeynes, KC Heasman, RM Gwilliam (2015)Certified ion implantation fluence by high accuracy RBS, In: ANALYST140(9)pp. 3251-3261 ROYAL SOC CHEMISTRY
T Alzanki, N Bennett, R Gwilliam, C Jeynes, P Bailey, T Noakes, B Sealy (2014)Ion Beam Analysis for Hall Scattering Factor Measurements in Antimony Implanted Bulk and Strained Silicon, In: JOURNAL OF ENGINEERING RESEARCH2(1)pp. 121-132 ACADEMIC PUBLICATION COUNCIL
D Perusko, V Milinovic, M Mitric, S Petrovic, C Jeynes, M Milosavljevic (2009)Ion Beam Modification of Al/Ti Multilayers, In: MATERIALS AND MANUFACTURING PROCESSES24(10-11)pp. 1130-1133 TAYLOR & FRANCIS INC
N Peng, C Jeynes, RM Gwilliam, KJ Kirkby, RP Webb (2007)Depth profile analysis for MgB2 thin films, formed by B implantation in Mg ribbons using energetic ion backscatterings, In: PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS460pp. 600-601

Both Rutherford backscatterings of He-4(+) beams and non-Rutherford backscatterings of He-4(+) and H+ beams have been used in this study to investigate the depth profiles of B dopant in Mg target upon B implantation and post annealing. Primitive data analysis suggests an enhanced diffusion of surface C contaminant during the B implantation process, together with enhanced surface oxidation upon implantation and thermal annealing in flowing N-2 atmosphere. Published by Elsevier B.V.

JL ALTRIP, AGR EVANS, J LOGAN, C JEYNES (1990)HIGH-TEMPERATURE MILLISECOND ANNEALING OF ARSENIC IMPLANTED SILICON, In: SOLID-STATE ELECTRONICS33(6)pp. 659-664 PERGAMON-ELSEVIER SCIENCE LTD
JL Colaux, G Terwagne, C Jeynes (2015)On the traceably accurate voltage calibration of electrostatic accelerators, In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS349pp. 173-183 ELSEVIER SCIENCE BV
AF Gurbich, NP Barradas, C Jeynes, E Wendler (2002)Applying elastic backscattering spectrometry when the nuclear excitation function has a fine structure, In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS190PII S0168-pp. 237-240 ELSEVIER SCIENCE BV
A Vieira, NP Barradas, C Jeynes (2001)Error performance analysis of artificial neural networks applied to Rutherford backscattering, In: SURFACE AND INTERFACE ANALYSIS31(1)pp. 35-38 JOHN WILEY & SONS LTD
MJ Ashwin, RE Pritchard, RC Newman, TB Joyce, TJ Bullough, J Wagner, C Jeynes, SJ Breuer, R Jones, PR Briddon, S Oberg (1996)The bonding of C-As acceptors in InxGa1-xAs grown by chemical beam epitaxy using carbon tetrabromide as the source of carbon, In: JOURNAL OF APPLIED PHYSICS80(12)pp. 6754-6760 AMER INST PHYSICS
NH Peng, C Jeynes, RP Webb, IR Chakarov, MG Blamire (2001)Monte Carlo simulations of masked ion beam irradiation damage profiles in YBa2Cu3O7-delta thin films, In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS178pp. 242-246
P Mistry, I Gomez-Morilla, RC Smith, D Thomson, GW Grime, RP Webb, R Gwilliam, C Jeynes, A Cansell, M Merchant, KJ Kirkby (2007)Maskless proton beam writing in gallium arsenide, In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS260(1)pp. 437-441
KS Shtereva, I Novotny, V Tvarozek, M Vojs, S Flickyngerova, P Sutta, A Vincze, M Milosavljević, C Jeynes, N Peng (2012)Carrier Control in Polycrystalline ZnO:Ga Thin Films via Nitrogen Implantation Electronic Materials and Processing, In: ECS Journal of Solid State Science and Technology1(5)pp. 237-240 The Electrochemical Society

The electrical characteristics of gallium-doped zinc oxide (ZnO:Ga) thin films prepared by rf diode sputtering were altered via nitrogen implantation by performing two implants at 40 keV and 80 keV with doses of 1×1015 and 1×1016 cm−2 to achieve a p-type semiconductor. An implantation of 1×1015 cm−2 N+-ions yielded a p-type with hole concentrations 1017–1018 cm−3 in some as-implanted samples. The films annealed at temperatures above 200°C in O2 and above 400°C in N2 were n-type with electron concentrations 1017–1020 cm−3. The higher nitrogen concentration (confirmed by SRIM and SIMS), in the films implanted with a 1×1016 cm−2 dose, resulted in lower electron concentrations, respectively, higher resistivity, due to compensation of donors by nitrogen acceptors. The electron concentrations ratio n(1×1015)/n(1×1016) decreases with increasing annealing temperature. Hall measurements showed that 1×1016 cm−2 N-implanted films became p-type after low temperature annealing in O2 at 200°C and in N2 at 400°C with hole concentrations of 3.2×1017 cm−3 and 1.6×1019 cm−3, respectively. Nitrogen-implanted ZnO:Ga films showed a c-axes preferred orientation of the crystallites. Annealing is shown to increase the average transmittance (>80%) of the films and to cause bandgap widening (3.19–3.3 eV).

YP Li, JA Kilner, J Thomas, D Lacey, LF Cohen, AD Caplin, YH Li, FM Saba, PG Quincey, RE Somekh, C Jeynes, ZH Jafri (1996)Characterization of YBa2Cu3O7-delta thin films deposited by dc magnetron sputtering, In: JOURNAL OF MATERIALS SCIENCE31(23)pp. 6137-6144 CHAPMAN HALL LTD
O Osasona, A Djebah, IAO Ojo, MA Eleruja, AV Adedeji, C Jeynes, EOB Ajayi (1997)Preparation and characterization of MOCVD thin films of zinc sulphide, In: OPTICAL MATERIALS7(3)pp. 109-115 ELSEVIER SCIENCE BV
IH Wilson, YJ Chen, JB Xu, RAB Devine, C Jeynes (1996)Ion impacts and nanostructures on Ge(111), In0.22Ga0.78As/GaAs(100) and alpha quartz surfaces observed by atomic force microscopy, In: SURFACE AND INTERFACE ANALYSIS24(13)pp. 881-886
DJ Kang, NH Peng, C Jeynes, R Webb, HN Lee, B Oh, SH Moon, G Burnell, NA Stelmashenko, EJ Tarte, DF Moore, MG Blamire (2003)Josephson effects in MgB2 metal masked ion damage junctions, In: IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY13(2)pp. 1071-1074
J Mallegol, JP Gorce, O Dupont, C Jeynes, PJ McDonald, JL Keddie (2002)Origins and effects of a surfactant excess near the surface of waterborne acrylic pressure-sensitive adhesives, In: LANGMUIR18(11)pp. 4478-4487 AMER CHEMICAL SOC
C Jeynes, GG Rozenberg, SP Speakman, JHG Steinke (2002)A microbeam RBS analysis of low temperature direct-write inkjet deposited copper, In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS188PII S0168-pp. 141-145 ELSEVIER SCIENCE BV
SJ Toal, HS Reehal, NP Barradas, C Jeynes (1999)Growth of microcrystalline beta-SiC films on silicon by ECR plasma CVD, In: APPLIED SURFACE SCIENCE138pp. 424-428
M Secchi, E Demenev, JL Colaux, D Giubertoni, R Dell'Anna, E Iacob, M Gwilliam, C Jeynes, M Bersani (2015)Development of nanotopography during SIMS characterization of thin films of Ge1-xSnx alloy, In: APPLIED SURFACE SCIENCE356pp. 422-428 ELSEVIER SCIENCE BV
M Milosavljevic, G Shao, N Bibic, CN McKinty, C Jeynes, KP Homewood (2002)Synthesis of amorphous FeSi2 by ion beam mixing, In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS188pp. 166-169
YP Li, JA Kilner, TJ Tate, RJ Chater, C Jeynes, ZH Jafri (1996)SIMS, RBS, and ion channelling studies of H-2(+) or O-18(+) irradiated LaAlO3, (100) single crystal, In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS118(1-4)pp. 133-138
M Stojanovic, A Vasic, C Jeynes (1996)Ion implanted silicides studies by frequency noise level measurements, In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS112(1-4)pp. 192-195
AS Way, C Jeynes, RP Webb (1999)Measurement of lateral stress in argon implanted thin gold films using quartz resonator techniques, In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS148(1-4)pp. 238-241
MC Stennett, NC Hyatt, DP Reid, ER Maddrell, N Peng, C Jeynes, KJ Kirkby, JC Woicik (2009)Characterisation of Ion Beam Irradiated Zirconolite for Pu Disposition, In: SCIENTIFIC BASIS FOR NUCLEAR WASTE MANAGEMENT XXXII1124pp. 243-248
JL Colaux, C Jeynes (2015)Accurate electronics calibration for particle backscattering spectrometry, In: ANALYTICAL METHODS7(7)pp. 3096-3104 ROYAL SOC CHEMISTRY
SJ Toal, HS Reehal, SJ Webb, NP Barradas, C Jeynes (1999)Structural analysis of nanocrystalline SiC thin films grown on silicon by ECR plasma CVD, In: THIN SOLID FILMS343pp. 292-294 ELSEVIER SCIENCE SA
CD James, C Jeynes, NP Barradas, L Clifton, RM Dalgliesh, RF Smith, SW Sankey, LR Hutchings, RL Thompson (2015)Modifying polyester surfaces with incompatible polymer additives, In: REACTIVE & FUNCTIONAL POLYMERS89pp. 40-48 ELSEVIER SCIENCE BV

Surface modification of amorphous PET in incompatible blends is demonstrated using fluorocarbon end-functional polystyrenes. Contact angles with water and decane were consistent with high levels of surface fluorocarbon, even for spin-cast films with no further processing required. Hydrophobicity and lipophobicity were further increased by annealing above the glass transition temperature. High resolution depth profiling using complementary ion beam analysis and specular neutron reflectometry has enabled accurate characterisation of the composition profile of the additive including the minimum in additive concentration found just below the surface enriched layer. This analysis quantified the very low compatibility between the modifying polymer and the amorphous PET and was consistent with the highly segregated nature of the adsorbing species and its sharp interface with the subphase. For these incompatible polymer blends, surfaces enriched with the surface active polymer could coexist at equilibrium with extremely low (∼0.4%) bulk loadings of the additive. This suggests that for thicker films at even lower additive concentrations than the minimum 1% that we studied, it may be possible to achieve efficient surface modification. However, at this concentration, the efficiency of surface modification is limited by the processing conditions. Finally we note that in higher loadings of surface active additive there is clear evidence for lateral phase separation into patterned domains of differing composition. The enhancement in surface properties is due to local reorganisation rather than bulk redistribution of the components within the film, as the composition versus depth distributions of the polymer blend components was observed to be relatively unaffected by annealing.

NP Barradas, C Jeynes, RP Webb, U Kreissig, R Grotzschel (1999)Unambiguous automatic evaluation of multiple Ion Beam Analysis data with Simulated Annealing, In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS149(1-2)pp. 233-237 ELSEVIER SCIENCE BV
AT Naveed, MQ Huda, KF Abd El-Rahman, J Hartung, JH Evans-Freeman, AR Peaker, DC Houghton, C Jeynes, WP Gillin (1998)Erbium in silicon-germanium quantum wells, In: JOURNAL OF LUMINESCENCE80(1-4)pp. 381-386
A Kozanecki, C Jeynes, NP Barradas, BJ Sealy, W Jantsch (1999)The influence of implantation and annealing conditions on optical activity of Er3+ ions in 6H SiC, In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS148(1-4)pp. 512-516
NP Barradas, AP Knights, C Jeynes, OA Mironov, TJ Grasby, EHC Parker (1999)High-depth-resolution Rutherford backscattering data and error analysis of SiGe systems using the simulated annealing and Markov chain Monte Carlo algorithms, In: PHYSICAL REVIEW B59(7)pp. 5097-5105 AMER PHYSICAL SOC
AC Simonsen, JP Pohler, C Jeynes, S Tougaard (1999)Quantification of Au deposited on Ni: XPS peak shape analysis compared to RES, In: SURFACE AND INTERFACE ANALYSIS27(1)pp. 52-56 JOHN WILEY & SONS LTD
WE Booij, CA Elwell, EJ Tarte, PF McBrien, F Kahlmann, DF Moore, MG Blamire, NH Peng, C Jeynes (1999)Electrical properties of electron and ion beam irradiated YBa2Cu3O7-delta, In: IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY9(2)pp. 2886-2889
M Stojanovic, C Jeynes, N Bibic, M Milosavljevic, A Vasic, Z Milosevic (1996)Frequency noise level of as ion implanted TiN-Ti-Si structures, In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS115(1-4)pp. 554-556
Christopher Jeynes (2013)Psalms: the Prayerbook of the Church

The biblical book of Psalms is discussed from an historical point of view. Who were the original poets, when did they write and what did they intend by their poetry? The short answer to these questions is: "we don't know for sure", but the long answer is considerably more interesting. This poetry from three millennia ago has changed the world, and has the potential to continue changing it.

NP Barradas, C Jeynes, M Jenkin, PK Marriott (1999)Bayesian error analysis of Rutherford backscattering spectra, In: THIN SOLID FILMS343pp. 31-34 ELSEVIER SCIENCE SA
NP Barradas, SA Almeida, C Jeynes, AP Knights, SRP Silva, BJ Sealy (1999)RBS and ERDA study of ion beam synthesised amorphous gallium nitride, In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS148(1-4)pp. 463-467 ELSEVIER SCIENCE BV
A Nejim, C Jeynes, RP Webb, NEB Cowern, CJ Patel (1997)Influence of dynamic annealing on the depth distribution of germanium implanted in (100) silicon at elevated temperatures, In: DEFECTS AND DIFFUSION IN SILICON PROCESSING469pp. 387-393
AS Clough, SA Collins, FE Gauntlett, MR Hodgson, C Jeynes, MS Rihawy, AM Todd, RL Thompson (2006)In situ water permeation measurement using an external He-3(2+) ion beam, In: JOURNAL OF MEMBRANE SCIENCE285(1-2)pp. 137-143 ELSEVIER SCIENCE BV
G Boudreault, C Jeynes, E Wendler, A Nejim, RP Webb, U Watjen (2002)Accurate RBS measurement of ion implant doses in a silicon, In: SURFACE AND INTERFACE ANALYSIS33(6)pp. 478-486 WILEY-BLACKWELL
C Jeynes, JL Colaux (2016)Thin film depth profiling by Ion Beam Analysis, In: Analyst141pp. 5944-5985 Royal Society of Chemistry

The analysis of thin films is of central importance for functional materials, including the very large and active field of nanomaterials. Quantitative elemental depth profiling is basic to analysis, and many techniques exist, but all have limitations and quantitation is always an issue. We here review recent significant advances in ion beam analysis (IBA) which now merit it a standard place in the analyst’s toolbox. Rutherford backscattering spectrometry (RBS) has been in use for half a century to obtain elemental depth profiles non-destructively from the first fraction of a micron from the surface of materials: more generally, “IBA” refers to the cluster of methods including elastic scattering (RBS; elastic recoil detection, ERD; and non-Rutherford elastic backscattering, EBS), nuclear reaction analysis (NRA), particle-induced X-ray emission (PIXE) and particle-induced gamma-ray emission (PIGE) which is a form of NRA. We have at last demonstrated what was long promised, that RBS can be used as a primary reference technique for the best traceable accuracy available for non-destructive model-free methods in thin films. Also, it has become clear over the last decade that we can effectively combine synergistically the quite different information available from the atomic (PIXE) and nuclear (RBS, EBS, ERD, NRA) methods. Although it is well known that RBS has severe limitations that curtail its usefulness for elemental depth profiling, these limitations are largely overcome when we make proper synergistic use of IBA methods. In this Tutorial Review we aim to briefly explain to analysts what IBA is and why it is now a general quantitative method of great power. Analysts have got used to the availability of the large synchrotron facilities for certain sorts of difficult problem, but there are many much more easily accessible mid-range IBA facilities also able to address (and often more quantitatively) a wide range of otherwise almost intractable thin film questions.

NP Barradas, K Arstila, G Battistig, M Bianconi, N Dytlewski, C Jeynes, E Kotai, G Lulli, M Mayer, E Rauhala, E Szilagyi, M Thompson (2008)Summary of "IAEA intercomparison of IBA software", In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS266(8)pp. 1338-1342
C Pascual-Izarra, NP Barradas, MA Reis, C Jeynes, M Menu, B Lavedrine, Jean Jacques Ezrati, S Roehrs (2007)Towards truly simultaneous PIXE and RBS analysis of layered objects in cultural heritage, In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS261(1-2)pp. 426-429 ELSEVIER SCIENCE BV
M Gilbert, C Davoisne, MC Stennett, NC Hyatt, N Peng, C Jeynes, WE Lee (2011)Krypton and helium irradiation damage in yttria-stabilised zirconia, In: Materials Research Society Symposium Proceedings1298pp. 197-202 Materials Research Society
J Khamsuwan, S Intarasiri, K Kirkby, C Jeynes, PK Chu, T Kamwanna, LD Yu (2011)High-energy heavy ion beam annealing effect on ion beam synthesis of silicon carbide, In: Surface and Coatings Technology206(5)pp. 770-774 Elsevier

Silicon carbide (SiC) is a superior material potentially replacing conventional silicon for high-power and high-frequency microelectronic applications. Ion beam synthesis (IBS) is a novel technique to produce large-area, high-quality and ready-to-use SiC crystals. The technique uses high-fluence carbon ion implantation in silicon wafers at elevated temperatures, followed by high-energy heavy ion beam annealing. This work focuses on studying effects from the ion beam annealing on crystallization of SiC from implanted carbon and matrix silicon. In the ion beam annealing experiments, heavy ion beams of iodine and xenon, the neighbors in the periodic table, with different energies to different fluences, I ions at 10, 20, and 30MeV with 1-5×10 12ions/cm 2, while Xe ions at 4MeV with 5×10 13 and 1×10 14ions/cm 2, bombarded C-ion in implanted Si at elevated temperatures. X-ray diffraction, Raman scattering, infrared spectroscopy were used to characterize the formation of SiC. Non-Rutherford backscattering and Rutherford backscattering spectrometry were used to analyze changes in the carbon depth profiles. The results from this study were compared with those previously reported in similar studies. The comparison showed that ion beam annealing could indeed induce crystallization of SiC, mainly depending on the single ion energy but not on the deposited areal density of the ion beam energy (the product of the ion energy and the fluence). The results demonstrate from an aspect that the electronic stopping plays the key role in the annealing.

Q Zhao, Y Liu, C Wang, S Wang, N Peng, C Jeynes (2007)Bacterial adhesion on ion-implanted stainless steel surfaces, In: APPLIED SURFACE SCIENCE253(21)pp. 8674-8681 ELSEVIER SCIENCE BV
C Jeynes, GW Grime (2012)Atomic Excitation Exploited by Energetic-Beam Characterization Methods, In: Characterization of MaterialsVol.1:pp. 74-90 Wiley

Many disparate methods of compositional analysis of materials are underpinned by the same fundamental atomic processes: the excitation of the electronic system of the atoms followed by its subsequent relaxation. These methods include the electron spectroscopies (XPS, AES) used for surface studies, the electron microscopies used for elemental and structural characterisation (SEM using EDS and WDX; TEM using EELS), the X-ray methods (XRF, XAS) and ion beam analysis (PIXE) used for elemental and chemical characterisation. All rely on measuring the characteristic energy absorbed or emitted by the unknown target atom when its electronic system is excited by ionisation due to charged particles or electromagnetic radiation. This excitation is defined by the energy levels of the atomic electrons, determined primarily by the atomic number of the atom. (Atoms can also be excited without ionisation, as in optical and infra-red spectroscopy: this is outside the scope of this article.) The theoretical description of the electronic structure of atoms is a major intellectual triumph of the twentieth century and this body of knowledge is exploited in the theoretical description of each of these methods, but the treatment of any particular method is usually presented by specialists in that method in isolation from all others. In this chapter we present a brief synthetic overview of materials analysis using atomic excitation, highlighting those features and physical concepts which underpin all these apparently disparate analysis methods. We hope to encourage modern analysts to appreciate the truly complementary nature of the powerful methods at their disposal.

C Jeynes (2012)Ion Beam Methods – Introduction, In: Characterization of MaterialsVol.3:pp. 1941-1948 Wiley

Ion beam techniques are used with ion energies from eV to many MeV and a very wide range of ion species to characterise materials at length scales from sub-nm to sub-mm and in a wide variety of different ways. Many of these techniques are non destructive. Atomic concentration can be determined from matrix elements (the stoichiometry) to minor and trace elements (at ng/g sensitivity and better), in one dimension (depth profiles), two dimensions (elemental maps), and three dimensions with full tomography being feasible. There is sensitivity to the whole Periodic Table one way or another, with nuclear techniques for isotopic sensitivity, and high resolution mass spectrometry for obtaining isotopic ratios at ultra-high sensitivities of 1014 and better. Other techniques include ultra-high resolution microscopy, characterisation of semiconductor device defects at high spacial resolution, and the investigation of damage processes in the nuclear irradiation of materials. ION BEAM METHODS for thin film materials have major application areas from archaeology to zoology (including materials science, geology, cultural heritage, electronics and many others).

P Mistry, I Gomez-Morilla, GW Grime, R Webb, C Jeynes, R Gwilliarn, A Cansell, M Merchant, KJ Kirkby (2006)Proton beam lithography at the University of Surrey's Ion Beam Centre, In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS242(1-2)pp. 387-389
DJ Kang, NH Peng, R Webb, C Jeynes, G Burnell, JH Yun, SH Moon, B Oh, EJ Tarte, DF Moore, M Kelly, MG Blamire (2002)Irradiation damage technology for manufacturable Josephson junctions, In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS188pp. 183-188
NP Barradas, C Jeynes (2008)Advanced physics and algorithms in the IBA DataFurnace, In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS266(8)pp. 1875-1879 ELSEVIER SCIENCE BV
TRE Simpson, Z Tabatabaian, C Jeynes, B Parbhoo, JL Keddie (2004)Influence of interfaces on the rates of crosslinking in poly(dimethyl siloxane) coatings, In: JOURNAL OF POLYMER SCIENCE PART A-POLYMER CHEMISTRY42(6)pp. 1421-1431 JOHN WILEY & SONS INC
MA Eleruja, GO Egharevba, OA Abulude, OO Akinwunmi, C Jeynes, EOB Ajayi (2007)Preparation and characterization of metalorganic chemical vapor deposited nickel oxide and lithium nickel oxide thin films, In: JOURNAL OF MATERIALS SCIENCE42(8)pp. 2758-2765 SPRINGER
M Gilbert, C Davoisne, M Stennett, N Hyatt, N Peng, C Jeynes, WE Lee (2011)Krypton and helium irradiation damage in neodymium-zirconolite, In: Journal of Nuclear Materials416(1-2)pp. 221-224 Elsevier
M Milosavljevic, D Perusko, V Milinovic, Z Stojanovic, A Zalar, J Kovac, C Jeynes (2010)Ion irradiation stability of multilayered AlN/TiN nanocomposites, In: JOURNAL OF PHYSICS D-APPLIED PHYSICS43(6)ARTN 0pp. ?-? IOP PUBLISHING LTD
N Peng, G Shao, C Jeynes, RP Webb, RM Gwilliam, G Boudreault, DM Astill, WY Liang (2003)Ion beam synthesis of superconducting MgB2 thin films, In: APPLIED PHYSICS LETTERS82(2)pp. 236-238 AMER INST PHYSICS
D Giubertoni, E Demenev, Y Jestin, F Meirer, S Gennaro, E Iacob, G Pepponi, G Pucker, M Bersani, S Gupta, KC Saraswat, RM Gwilliam, C Jeynes, JL Colaux (2012)Solid phase epitaxial re-growth of Sn ion implanted germanium thin films, In: AIP Conference Proceedings1496pp. 103-106 American Institute of Physics

Doping of Ge with Sn atoms by ion implantation and annealing by solid phase epitaxial re-growth process was investigated as a possible way to create GeSn layers. Ion implantation was carried out at liquid nitrogen to avoid nano-void formation and three implant doses were tested: 5×10, 1×10 and 5×10 at/cm, respectively. Implant energy was set to 45 keV and implants were carried out through an 11 nm SiNO film to prevent Sn out-diffusion upon annealing. This was only partially effective. Samples were then annealed in inert atmosphere either at 350°C varying anneal time or for 100 s varying temperature from 300 to 500°C. SPER was effective to anneal damage without Sn diffusion at 350° for samples implanted at medium and low fluences whereas the 5×10 at/cm samples remained with a ∼15 nm amorphous layer even when applying the highest thermal budget. © 2012 American Institute of Physics.

N Peng, C Jeynes, RM Gwilliam, RP Webb, F Pan, X Chen (2012)On fabrication of high concentration Mn doped Si by ion implantation: problem and challenge, In: 18TH INTERNATIONAL VACUUM CONGRESS (IVC-18)32pp. 408-411
NG Emerson, RM Gwilliam, JM Shannon, C Jeynes, BJ Sealy, T Tsvetkova, N Tzenov, M Tzolov, D Dimova-Malinovska (2000)Electrical and optical properties of Co+ ion implanted a-Si1-xCx : H alloys, In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS160(4)pp. 505-509 ELSEVIER SCIENCE BV
N Bibic, M Milosavljevic, D Perusko, C Jeynes (1998)Investigation of ion beam mixing effects in Ta/Pd bilayers deposited on Si, In: THIN SOLID FILMS317(1-2)pp. 274-277
MA Razali, AJ Smith, C Jeynes, RM Gwilliam (2012)Temperature-Dependant Study Of Phosphorus Ion Implantation In Germanium, In: ION IMPLANTATION TECHNOLOGY 20121496pp. 193-196
MI CURRENT, N OHNO, K HURLEY, WA KEENAN, TL GUITNER, C JEYNES (1993)MICROUNIFORMITY MEASUREMENTS OF ION-IMPLANTED SILICON, In: SOLID STATE TECHNOLOGY36(7)pp. 111-& PENNWELL PUBL CO SOLID STATE TECHNOLOGY OFFICE
A Nejim, NP Barradas, C Jeynes, F Cristiano, E Wendler, K Gartner, BJ Sealy (1998)Residual post anneal damage of Ge and C co-implantation of Si determined by quantitative RBS-channelling, In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS139(1-4)pp. 244-248
NP Barradas, C Jeynes, KP Homewood, BJ Sealy, M Milosavljevic (1998)RBS/simulated annealing analysis of silicide formation in Fe/Si systems, In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS139(1-4)pp. 235-238 ELSEVIER SCIENCE BV
A KAZOR, C JEYNES, IW BOYD (1994)FLUORINE ENHANCED OXIDATION OF SILICON AT LOW-TEMPERATURES, In: APPLIED PHYSICS LETTERS65(12)pp. 1572-1574 AMER INST PHYSICS
C. Jeynes, E. Nolot, C. Costa, C. Sabbione, W. Pessoa, F. Pierre, A. Roule, M. Mantler (2020)Quantifying nitrogen in GeSbTe:N alloys, In: Journal of Analytical Atomic Spectrometry Royal Society of Chemistry

We have calibrated on-site WD-XRF (wavelength-dispersive X-ray fluorescence) measurements of GeSbTe:N (GST:N) stoichiometry with off-site accurate ion beam analysis (IBA). N is determined by elastic backscattering spectrometry (EBS) using the resonance at 3.7 MeV in the 14N(a, a)14N reaction. Ge and Sb+Te are determined by Rutherford backscattering spectrometry (RBS) separately but self-consistently with the resonant EBS: the Sb/Te ratio can be determined by RBS but not with useful precision. The XRF instrumental function is determined using pure metal standards and the spectra are quantified using Fundamental Parameters code. We find that, as expected, for both Ge and (Sb+Te) the heavy elements are determined accurately by XRF (within the uncertainties), but for N the standardless XRF has non-linear errors around 10%. Using the absolute N content determined by IBA a calibration curve is obtained allowing N determination by WD-XRF at a precision of about 1% and an absolute accuracy (traceable through IBA) of about 4 % for GST films with N content between 4-20 at%. The IBA measurement precision of the N content of the GST-N XRF calibration samples is 0.4 at% (that is, a relative precision ranging from 10 % to 2 % for N contents between 4-20 at%).

NH Peng, I Chakarov, C Jeynes, R Webb, W Booij, M Blamire, M Kelly (2000)2D Monte Carlo simulation of proton implantation of superconducting YBa2Cu3O7-delta thin films through high aspect ratio Nb masks, In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS164pp. 979-985
M Stojanovic, M Milosavljevic, C Jeynes (1998)Characterization of as implanted silicides by frequency noise level measurements, In: ADVANCED MATERIALS AND PROCESSES282-2pp. 153-156
T Alzanki, N Bennett, R Gwilliam, C Jeynes, B Sealy, P Bailey, T Noakes (2014)Ion beam analysis for hall scattering factor measurements in antimony implanted bulk and strained silicon, In: Journal of Engineering Research2(1)pp. 122-132

Rutherford back-scattering (RBS) and Medium Energy Ion Scattering (MEIS) have been used to determine the lattice site occupancy of antimony (Sb) implanted into silicon (Si) and strained silicon (sSi) for ion energies of 2keV to 40keV. After annealing in the range 600-1100°C for various times, Ilall effect measurements were used to provide a measure of the percentage electrical activity. A comparison of the lattice site occupancy with the percentage electrical activity was used to confirm whether the assumption that the Hall scattering factor is equal to unity is valid. Our results demonstrate that for 40keV implants the electrical activation is about 90%. In the case of 2keV implants the electrical activation is lower and in the range 10-80%, depending on the ion fluence and annealing conditions. This reduction in activation for lower energy implants is a result of inactive Sb close to the semiconductor/native-oxide interface, or above concentrations of 4.5×10cm . Tensile strain facilitates the lattice site occupancy and electrical activation of Sb in Si by raising the doping ceiling. For both 40keV and 2keV implants, we have carried out a comparison of RBS/MEIS and Hall effect data to show that for Sb implants into both bulk Si and strained Si the Hall scattering factor is equal to unity within experimental error.

A KOZANECKI, BJ SEALY, C JEYNES, WP GILLIN, R GREY (1994)INTERDIFFUSION AND THERMALLY-INDUCED STRAIN RELAXATION IN GAAS/IN0.2GA0.8AS/GAAS SINGLE-QUANTUM-WELL STRUCTURES, In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS85(1-4)pp. 192-196
BV KING, C JEYNES, RP WEBB, JA KILNER (1993)ION-BEAM MIXING OF ISOTOPIC SILVER BILAYERS BY 200 KEV GERMANIUM, In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS80-1pp. 163-166
NP Barradas, C Jeynes, OA Mironov, PJ Phillips, EHC Parker (1998)High depth resolution Rutherford backscattering analysis of Si-Si0.78Ge0.22/(0 0 1)Si superlattices, In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS139(1-4)pp. 239-243 ELSEVIER SCIENCE BV
S LYNCH, M MURTAGH, GM CREAN, PV KELLY, M OCONNOR, C JEYNES (1993)NONDESTRUCTIVE DEPTH PROFILING OF SILICON ION-IMPLANTATION INDUCED DAMAGE IN SILICON (100) SUBSTRATES, In: THIN SOLID FILMS233(1-2)pp. 199-202
C Davoisne, MC Stennett, NC Hyatt, Nianhua Peng, Christopher Jeynes, WE Lee (2011)Krypton irradiation damage in Nd-doped zirconolite and perovskite, In: Journal of Nuclear Materials415(1)pp. 67-73 Elsevier

Understanding the effect of radiation damage and noble gas accommodation in potential ceramic hosts for plutonium disposition is necessary to evaluate their long-term behaviour during geological disposal. Polycrystalline samples of Nd-doped zirconolite and Nd-doped perovskite were irradiated ex situ with 2 MeV Kr+ at a dose of 5 1015 ions cm2 to simulate recoil of Pu nuclei during alpha decay. The feasibility of thin section preparation of both pristine and irradiated samples by Focused Ion Beam sectioning was demonstrated. After irradiation, the Nd-doped zirconolite revealed a well defined amorphous region separated from the pristine material by a thin (40–60 nm) damaged interface. The zirconolite lattice was lost in the damaged interface, but the fluorite sublattice was retained. The Nd-doped perovskite contained a defined irradiated layer composed of an amorphous region surrounded by damaged but still crystalline layers. The structural evolution of the damaged regions is consistent with a change from orthorhombic to cubic symmetry. In addition in Nd-doped perovskite, the amorphisation dose depended on crystallographic orientation and possibly sample configuration (thin section or bulk). Electron Energy Loss Spectroscopy revealed Ti remained in the 4+ oxidation state but there was a change in Ti coordination in both Nd-doped perovskite and Nd-doped zirconolite associated with the crystalline to amorphous transition.

A Nejim, AP Knights, C Jeynes, PG Coleman, CJ Patel (1998)Profile broadening of high dose germanium implants into (100) silicon at elevated temperatures due to channeling, In: JOURNAL OF APPLIED PHYSICS83(7)pp. 3565-3573 AMER INST PHYSICS
RA Chakalov, C Jeynes, P Mikheenko, MD Allsworth, CNW Darlington, MS Colclough, CM Muirhead (2004)Difference in individual layer properties in cuprate/manganite structures deposited by laser ablation, In: ANNALEN DER PHYSIK13(1-2)pp. 81-82
J Mefo, KJ Kirkby, BJ Sealy, G Boudreault, C Jeynes, EJH Collart (2003)Elemental analysis of residual deposits in an ion implanter using IBA techniques, In: IIT2002: ION IMPLANTATION TECHNOLOGY, PROCEEDINGSpp. 467-470
M MILOSAVLJEVIC, C JEYNES, IH WILSON (1984)SOLID-PHASE EPITAXY OF EVAPORATED AMORPHOUS-SILICON FILMS, In: APPLIED PHYSICS LETTERS45(8)pp. 874-876 AMER INST PHYSICS
AJ DANN, MR FAHY, MR WILLIS, C JEYNES (1987)ION-IMPLANTATION OF POLYMERIC PHTHALOCYANINES, In: SYNTHETIC METALS18(1-3)pp. 581-584 ELSEVIER SCIENCE SA LAUSANNE
KM Yousif, BE Smith, C Jeynes (1996)Investigation of microstructure of molybdenum-copper black electrodeposited coatings with reference to solar selectivity, In: JOURNAL OF MATERIALS SCIENCE31(1)pp. 185-191 CHAPMAN HALL LTD
M Milosavljević, M Obradović, A Grce, D Peruško, D Pjević, J Kovač, G Dražič, C Jeynes (2013)High dose ion irradiation effects on immiscible AlN/TiN nano-scaled multilayers, In: Thin Solid Films

The effects of high dose Ar ion irradiation on immiscible AlN/TiN multilayered structures were studied. The structures with 30 alternate layers of a total thickness of ~ 260 nm were deposited by reactive sputtering on (100) Si wafers. Individual layer thickness was ~ 8 nm AlN and ~ 9.3 nm TiN. Irradiation was done with 180 keV Ar ions to 1 × 10-8 × 10 ions/cm, with the projected range around mid-depth of the structures. It was found that the highest applied dose induced a considerable intermixing, where the growing TiN grains consume the adjacent AlN layers, transforming partly to (TiAl)N phase. Intermixing occurs due to a high contribution of collision cascades, which was not compensated in demixing by chemical driving forces. However, a multilayered structure with relatively flat surface and interfaces is still preserved, with measured nano-hardness value above the level for the as-deposited sample. The results are compared to other systems and discussed in the light of the existing ion beam mixing models. They can be interesting towards better understanding of the processes involved and to development of radiation tolerant coatings. © 2012 Elsevier B.V. All rights reserved.

C JEYNES, RE MILES, M BOLT, JG SIMMONS (1986)RAPID ANALYSIS OF SIPOS FILMS BY ELASTIC BACKSCATTERING AND RBS, In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS15(1-6)pp. 275-279 ELSEVIER SCIENCE BV
AJ DANN, MR FAHY, C JEYNES, MR WILLIS (1987)ELECTRICAL-PROPERTIES OF ION-IMPLANTED PCALF FILMS, In: PHYSICA STATUS SOLIDI A-APPLIED RESEARCH101(1)pp. K45-K48 AKADEMIE VERLAG GMBH
MJ Bailey, KJ Kirkby, C Jeynes (2009)Trace element profiling of gunshot residues by PIXE and SEM-EDS: a feasibility study, In: X-RAY SPECTROMETRY38(3)pp. 190-194
H Zurrug, J Mefo, B Sealy, G Boudreault, C Jeynes, RP Webb, KJ Kirkby, EJH Collart, B Brown, TL Alford, M Nastasi, MC Vella (2003)Characterization and enviromental impact of plasma products within an ion implanter, In: IIT2002: ION IMPLANTATION TECHNOLOGY, PROCEEDINGSpp. 471-474
M MILOSAVLJEVIC, N BIBIC, D PERUSKO, C JEYNES (1995)INFLUENCE OF ARSENIC ION-IMPLANTATION ON THE FORMATION OF TI-SILICIDES, In: VACUUM46(8-10)pp. 1009-1012
RG DUCKWORTH, RE HARPER, C JEYNES (1986)BACKSCATTERING ANALYSIS OF ZRN ALLOYS, In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS15(1-6)pp. 272-274 ELSEVIER SCIENCE BV
A T Kearsley, J L Colaux, D K Ross, P J Wozniakiewicz, L Gerlach, P Anz-Meador, T Griffin, B Reed, J Opiela, V V Palitsin, G W Grime, R P Webb, C Jeynes, J Spratt, T Salge, M J Cole, M C Price, M J Burchell (2017)Hypervelocity impact in low earth orbit: finding subtle impactor signatures on the Hubble Space Telescope, In: Procedia Engineering204pp. 492-499 Elsevier

Return of materials from the Hubble Space Telescope (HST) during shuttle orbiter service missions has allowed inspection of large numbers of hypervelocity impact features from long exposure at about 615 km altitude in low Earth orbit (LEO) [1,2]. Here we describe the application of advanced X-ray microanalysis techniques on scanning electron microscopes (SEM), microprobes and a 2 MV Tandetron, to nearly 400 impacts on the painted metal surface of the Wide Field and Planetary Camera 2 (WFPC2) radiator shield [3,4]. We identified artificial Orbital Debris (OD) and natural Micrometeoroid (MM) origins for small [5] and even for larger particles [6], which usually may leave little or no detectable trace on HST solar arrays, as they penetrate through the full cell thickness [2,7].

A Simon, T Csako, C Jeynes, T Szorenyi (2006)High lateral resolution 2D mapping of the B/C ratio in a boron carbide film formed by ferntosecond pulsed laser deposition, In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS249pp. 454-457
B Sealy, R Gwilliam, J Shannon, C Jeynes, C Angelov, T Tsvetkova (1998)Surface electrical conductivity of Co+-implanted a-SiC : H films, In: VACUUM51(2)pp. 281-284
C Buis, E Gros D'Aillon, L Verger, A Lohstroh, G Marrakchi, C Jeynes (2014)Effects of dislocation walls on charge carrier transport properties in CdTe single crystal, In: Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment735pp. 188-192 Elsevier

Radiation detectors for medical imaging at room temperature have been developed thanks to the availability of large chlorine-compensated cadmium telluride (CdTe:Cl) crystals. Microstructural defects affect the performance of CdTe:Cl radiation detectors. Advanced characterization tools, such as Ion Beam Induced Current (IBIC) measurements and chemical etching on tellurium and cadmium faces were used to evaluate the influence of sub-grain-boundaries on charge carrier transport properties. We performed IBIC imaging to correlate inhomogeneities in charge collection for both types of charge carrier with distribution of dislocation walls in the sample. This information should help improve performance in medical imaging applications. © 2013 Elsevier B.V.

OA Mironov, PJ Phillips, EHC Parker, MG Dowsett, NP Barradas, C Jeynes, M Mironov, VP Gnezdilov, V Ushakov, VV Eremenko (1997)Structural and optical characterisation of undoped Si-Si0.78Ge0.22/Si(001) superlattices grown by MBE, In: THIN SOLID FILMS306(2)pp. 307-312
AR Peaker, VP Markevich, J Slotte, M Rummukainen, I Capan, B Pivac, R Gwilliam, C Jeynes, L Dobaczewski (2006)Understanding ion implantation defects in germanium, In: ECS Transactions3(2)pp. 67-76

The recent interest in germanium as an alternative channel material for PMOS has revealed major differences from silicon in relation to ion implantation. In this paper we describe some initial results of a fundamental study into defect creation and removal in ion implanted germanium. In this stage of the work we have used silicon and germanium implants into germanium and into germanium rich silicon-germanium. The defect evolution in these samples is compared with electron and neutron irradiated material using annealing studies in conjunction with deep level transient spectroscopy, positron annihilation and Rutherford back scattering. It is proposed that both vacancy and interstitial clustering are important mechanisms in implanted germanium and the likely significance of this is discussed. copyright The Electrochemical Society.

A Kozanecki, M Stepikhova, S Lanzerstorfer, W Jantsch, L Palmetshofer, BJ Sealy, C Jeynes (1998)Excitation of Er3+ ions in silicon dioxide films thermally grown on silicon, In: APPLIED PHYSICS LETTERS73(20)pp. 2929-2931 AMER INST PHYSICS

Ion beam analysis (IBA) includes modern analytical techniques involving the use of energetic ion beams to probe the composition of the surface layers of solids. Major areas of application include microelectronics, cultural heritage, forensics, biology and materials sciences. The underlying science for IBA is the physics of the interactions between the ions in the beam and the atoms in the solid. Emission products from the interaction of charged particles with matter are measured, and specialized simulation and data analysis software provide information on the material composition. Although the basic physical processes are well understood, the reliability of data interpretation is limited by the knowledge of the physical data. The primary quantities required are the stopping powers describing the slowing of the ion in the material and the cross-sections of the interactions involved. The need for reliable data on stopping powers is adequately catered for by Stopping and Range of Ions in Matter (SRIM) computer code. The situation, however, is quite different for cross-sections for nuclear reactions and non- Rutherford elastic scattering. Although there is a considerable body of published data in nuclear physics literature, examination of the unevaluated experimental data has revealed numerous discrepancies beyond the error limits reported by the authors. The lack of reliable cross-sections has been recognized by the IBA community and has been discussed at several workshops and IAEA meetings, resulting in various recommendations including the organization of a coordinated research project (CRP) on a reference database for IBA. The main objective of the CRP was to develop a reference database for IBA that contains reliable and usable data that will be made freely available to the user community. Starting from the existing collection of data in the IAEA Ion Beam Analysis Nuclear Data Library (IBANDL), the CRP focused exclusively on the relevant nuclear cross-sections (nuclear reactions and non-Rutherford elastic scattering). During the course of the CRP, however, it was soon realized that there was also a growing demand for compilation and evaluation of nuclear reactions with gamma rays in the exit channel, which are used in the particle induced gamma ray emission technique. The recommendations led to a second CRP on the development of a reference database for particle induced gamma ray emission spectroscopy. The output of which will be published in a forthcoming IAEA publication. The IAEA wishes to thank all the participants of the CRP for their contributions to IBANDL and to this publication. The IAEA officers responsible for this publication were D. Abriola and P. Dimitriou of the Division of Physical and Chemical Sciences.

G Claudio, C Jeynes, KJ Kirkby, BJ Sealy, R Gwilliam, R Low, B Brown, TL Alford, M Nastasi, MC Vella (2003)Electrical behaviour of arsenic implanted silicon wafers at large tilt angle, In: IIT2002: ION IMPLANTATION TECHNOLOGY, PROCEEDINGSpp. 614-617
S Gennaro, BJ Sealy, C Jeynes, R Gwilliam, EJH Collart, A Licciardello (2003)Effects of carbon content and annealing conditions on the electrical activation of indium implanted silicon, In: IIT2002: ION IMPLANTATION TECHNOLOGY, PROCEEDINGSpp. 552-555
W Guan, J Ghatak, Y Peng, UM Bhatta, BJ Inkson, G Möbus, N Peng, C Jeynes, IM Ross (2013)Fabrication and characterisation of embedded metal nanostructures by ion implantation with nanoporous anodic alumina masks, In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms307pp. 273-276

Lateral ordered Co, Pt and Co/Pt nanostructures were fabricated in SiO2 and Si3N4 substrates by high fluence metal ion implantation through periodic nanochannel membrane masks based on anodic aluminium oxides (AAO). The quality of nanopatterning transfer defined by various AAO masks in different substrates was examined by transmission electron microscopy (TEM) in both imaging and spectroscopy modes. © 2013 Elsevier B.V. All rights reserved.

AP MATTHEWS, C JEYNES, KJ REESON, J THORNTON, NM SPYROU (1988)NUCLEAR-REACTION STUDIES OF N-15 IMPLANTED SPHEROIDAL GRAPHITE CAST-IRON USING AN ION MICROPROBE, In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS30(3)pp. 497-502 ELSEVIER SCIENCE BV
FL Martinez, R Ruiz-Merino, A del Prado, E San Andres, I Martil, G Gonzalez-Diaz, C Jeynes, NP Barradas, L Wang, HS Reehal (2004)Bonding structure and hydrogen content in silicon nitride thin films deposited by the electron cyclotron resonance plasma method, In: THIN SOLID FILMS459(1-2)pp. 203-207
M MILOSAVLJEVIC, C JEYNES, IH WILSON (1985)EPITAXIAL (100) SILICON FILMS GROWN AT LOW-TEMPERATURES IN AN ELECTRON-BEAM EVAPORATOR, In: JOURNAL OF APPLIED PHYSICS57(4)pp. 1252-1255 AMER INST PHYSICS
A Simon, P Sellin, A Lohstroh, C Jeynes (2003)Ion beam indneed charge microscopy imaging of CVD diamond, In: MICROSCOPY OF SEMICONDUCTING MATERIALS 2003(180)pp. 449-452
CU Mordi, MA Eleruja, BA Taleatu, GO Egharevba, AV Adedeji, OO Akinwunmi, B Olofinjana, C Jeynes, EOB Ajayi (2009)Metal Organic Chemical Vapour Deposited Thin Films of Cobalt Oxide Prepared via Cobalt Acetylacetonate, In: JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY25(1)pp. 85-89 JOURNAL MATER SCI TECHNOL
G Boudreault, G Claudio, C Jeynes, R Low, BJ Sealy (2004)Accurate calibration of the retained fluence from a versatile single wafer implanter using RBS, In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS217(1)pp. 177-182 ELSEVIER SCIENCE BV
JL Colaux, C Jeynes (2014)High accuracy traceable Rutherford backscattering spectrometry of ion implanted samples, In: ANALYTICAL METHODS6(1)pp. 120-129 ROYAL SOC CHEMISTRY
M ONEILL, AC BRYCE, JH MARSH, RM DELARUE, JS ROBERTS, C JEYNES (1989)MULTIPLE QUANTUM WELL OPTICAL WAVE-GUIDES WITH LARGE ABSORPTION-EDGE BLUE SHIFT PRODUCED BY BORON AND FLUORINE IMPURITY-INDUCED DISORDERING, In: APPLIED PHYSICS LETTERS55(14)pp. 1373-1375 AMER INST PHYSICS
T BACHMANN, E WENDLER, W WESCH, O HERRE, RJ WILSON, C JEYNES, RM GWILLIAM, BJ SEALY (1995)DAMAGE PRODUCTION DURING MEV ION-IMPLANTATION IN GAAS AND INAS, In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS99(1-4)pp. 619-622
D Perusko, M Milosavljevic, V Milinovic, B Timotijevic, A Zalar, J Kovac, B Pracek, C Jeynes (2008)High fluence nitrogen implantation in Al/Ti multilayers, In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS266(10)pp. 2503-2506
DD Berhanuddin, MA Lourenco, C Jeynes, M Milosavljevic, RM Gwilliam, KP Homewood (2012)Structural analysis of silicon co-implanted with carbon and high energy proton for the formation of the lasing G-centre, In: JOURNAL OF APPLIED PHYSICS112(10)ARTN 1pp. ?-? AMER INST PHYSICS
A Kozanecki, C Jeynes, BJ Sealy, W Jantsch, S Lanzerstorfer, W Heiss, G Prechtl (1998)Photoluminescence and backscattering characterization of 6H SiC implanted with erbium and oxygen ions, In: SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2264-2pp. 501-504
Christopher Jeynes, RL Thompson (2014)Thin Film Depth Profiling, In: Ion Beam Analysis: Fundamentals & Applicationspp. 197-220 Taylor & Francis

A series of examples of increasing complexity is given of the unequivocal measurement of elemental depth profiles in thin films, typically with a depth resolution of 10 nm or better. The parameters of Fickian and related diffusion depth profiles can readily be obtained, reaction mechanisms under thermal annealing can be followed, layered structures can be characterised, and a robust statistical estimate of the solution uncertainties can be calculated. What is particularly interesting is that although individual IBA techniques (RBS, PIXE, etc) are powerful separately, using them together self-consistently - so-called "Total-IBA" is much more powerful, enabling the solution of complex systems inaccessible to individual techniques. There are now a number of Total-IBA examples in the literature and we choose two of them, one is the analysis by the Louvre Museum of corrosion in an iconic photograph from 1827 - one of their treasures - and the other an analysis of a geological sample 800,000 years old, from a meteor strike near Mount Darwin, Tasmania.

KJ REESON, CJ STANLEY, C JEYNES, G GRIME, F WATT (1990)PIXE ANALYSIS TO DETERMINE THE TRACE-ELEMENT CONCENTRATIONS IN A SERIES OF GALENA (PBS) SPECIMENS FROM DIFFERENT LOCALITIES, In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS45(1-4)pp. 327-332
U BANGERT, PJ GOODHEW, C JEYNES, IH WILSON (1986)LOW-ENERGY (2-5 KEV) ARGON DAMAGE IN SILICON, In: JOURNAL OF PHYSICS D-APPLIED PHYSICS19(4)pp. 589-603 IOP PUBLISHING LTD