Dr Imalka Jayawardena
Academic and research departmentsAdvanced Technology Institute, Department of Electrical and Electronic Engineering.
Dr Imalka Jayawardena is the Marcus Lee Lecturer in Energy Materials at the Advanced Technology Institute (ATI). Prior to this he was a Research Fellow (2014 - 2019), EPSRC Postdoctoral Prize Fellow (2012 - 2014) and a Ph.D. researcher (2009 - 2012) at the same institute. Imalka completed his B.Sc. Honours Degree in Engineering at the Department of Materials Engineering, University of Moratuwa, Sri Lanka (2003 - 2007) where he also worked as a Lecturer prior to joining the ATI for his Ph.D.
Areas of specialism
Our research activities follow the strategic research themes of sustainability and innovation for health as identified under the University of Surrey's research themes which drive our activities on the following grand challenges:
- Science delivering global wellbeing
- Sustainable cities, communities and economies
Our main research activities are focused on the following key areas:
With the emergence of new semiconductors, there is a need towards developing a coherant model relating structure - optical and electronic properties for optoelectronic devices (photovoltaics, light emitting diodes and X-ray detectors). Together with our collaborators, we are working towards developing insights into time and spatially resolved light emission, transient electrical and transient structure characterisation for emerging semiconductors such as perovskties.
With the performance of single junction silicon photovoltaics approaching it's theoretical limits, there is a drive towards the development of multijunction architectures which enable the minimisation of thermalisation losses and higher efficiencies (beyond the single junction limits). Together with our collaborators, we are working towards developing perovskite incorporated multijunction architectures including perovskite/silicon, perovskite/CIGS and perovskite/perovskite concepts.
Detectors for Medical applications
Radiation have played a key role in increasing the cancer survival rates. We are working towards evaluating new detectors that can enable better imaging and accurate identification of biological effects of radiation therapy.
- Department of Engineering, Cambridge University
- Department of Medical Physics and Biomedical Engineering, UCL
- Department of Physics, University of Warwick
- Department of Electrical & Electronic Engineering, London Southbank University
- Department of Electronics & Computer Science, University of Southampton
- National Physical Laboratory, United Kingdom
- Royal Surrey County Hospital
- Faculty of Physics, University of Vienna
- Siemens Healthineers, Erlangen
- Fluxim, Switzerland
Postgraduate research supervision
- Ms Prabodhi Nanayakkara (2018) (Co-supervisor)
- Ms Shashini Silva (2019) (Co-supervisor)
- Reuben Rozario (2019)
- EEE3005 Control Engineering
- EEEM058 Renewable Energy Technologies
The deposition of amorphous carbon electrical contacts on a diamond radiation detector by Pulsed Laser Deposition (PLD) is introduced as a novel technique for producing tissue equivalent X-ray dosimeters. Three devices were fabricated with the following electrical contacts: pure amorphous carbon (labelled Poly-C), amorphous carbon mixed with Nickel (PLD) (labelled Poly-C/Ni) and conventional sputtered Pt (labelled Poly-Pt). To examine the performance of PLD carbon as a contact, a set of X-ray detection characteristics was studied and compared to those of Poly-Pt. This investigation includes current–voltage characteristics, linearity and dose rate dependence, sensitivity and specific sensitivity, photoconductive gain, stability, reproducibility and time response (rise and fall-off times). The experimental results suggest that Poly-C/Ni is suitable for an X-ray dosimeter. It shows a high signal to noise ratio (SNR) of ~ 3300, approximately linear relationship between the photocurrent and the dose rate and a sensitivity of 65 nC/Gy. In addition the current signal is stable and reproducible (within 0.26%) and the rise and fall-off times are less than 1.1 and 0.4 s, respectively.
Mixed halide Perovskite solar cells (PSCs) are commonly produced by depositing PbCl2 and CH3NH3I from a common solvent followed by thermal annealing, which in an up-scaled manufacturing process is likely to take place under ambient conditions. However, it has been reported that, similar to the effects of thermal annealing, ambient humidity also affects the crystallisation behaviour and subsequent growth of the Perovskite films. This implies that both of these factors must be accounted for in solar cell production. In this work, we report for the first time the correlation between the annealing time, relative humidity (RH) and device performance for inverted, mixed halide CH3NH3PbI(3−x)Cl x PSCs with active area ≈1 cm2. We find a trade-off between ambient humidity and the required annealing time to produce efficient solar cells, with low humidities needing longer annealing times and vice-versa. At around 20% RH, device performance weakly depends on annealing time, but at higher (30%–40% RH) or lower (0%–15% RH) humidities it is very sensitive. Processing in humid environments is shown to lead to the growth of both larger Perovskite grains and larger voids; similar to the effect of thermal annealing, which also leads to grain growth. Therefore, samples which are annealed for too long under high humidity show loss of performance due to low open circuit voltage caused by an increased number of shunt paths. Based on these results it is clear that humidity and annealing time are closely interrelated and both are important factors affecting the performance of PSCs. The findings of this work open a route for reduced annealing times to be employed by control of humidity; critical in roll-to-roll manufacture where low manufacturing time is preferred for cost reductions.
Interface engineering is an effective means to enhance the performance of thin‐film devices, such as perovskite solar cells (PSCs). Herein, a conjugated polyelectrolyte, poly[(9,9‐bis(3′‐((N,N‐dimethyl)‐N‐ethyl‐ammonium)‐propyl)‐2,7‐fluorene)‐alt‐2,7‐(9,9‐dioctylfluorene)]di‐iodide (PFN‐I), is used at the interfaces between the hole transport layer (HTL)/perovskite and perovskite/electron transport layer simultaneously, to enhance the device power conversion efficiency (PCE) and stability. The fabricated PSCs with an inverted planar heterojunction structure show improved open‐circuit voltage (Voc), short‐circuit current density (Jsc), and fill factor, resulting in PCEs up to 20.56%. The devices maintain over 80% of their initial PCEs after 800 h of exposure to a relative humidity 35–55% at room temperature. All of these improvements are attributed to the functional PFN‐I layers as they provide favorable interface contact and defect reduction.
Electronic skins (e-skins), which can seamlessly adapt and adhere to the body to mimic the functionality of human skin, are a rapidly emerging research area. Such e-skins have the potential to revolutionize artificial prosthetics, robotics, human-machine interfacing, and health monitoring applications. Powering the e-skin is a critical challenge at present due to strict performance criteria, including flexibility, stretchability, mobility, and autonomous operation. One of the most promising approaches to overcome some of these challenges is to scavenge energy from the human body's movements and its surrounding environment. This paper outlines some of the key potential developments that enable energy harvesting through mechanical, thermal affects, and low light sources, as well as energy management and storage technologies, which could lead toward the construction of autonomous e-skin modules and self-powered sensing systems.
Triple cation CsFAMA perovskite films fabricated via a one-step method have recently gained attention as an outstanding light-harvesting layer for photovoltaic devices. However, questions remain over the suitability of one-step processes for the production of large-area films, owing to difficulties in controlling the crystallinity, in particular, scaling of the frequently used anti-solvent washing step. This can be mitigated through the use of the two-step method which has recently been used to produce large-area films via techniques such as slot dye coating, spray coating or printing techniques. Nevertheless, the poor solubility of Cs containing salts in IPA solutions has posed a challenge for forming triple cation perovskite films using the two-step method. In this study, we tackle this challenge through fabricating perovskite films on a caesium carbonate (Cs2CO3) precursor layer, enabling Cs incorporation within the film. Synergistically, we find that Cs2CO3 passivates the SnO2 electron transport layer (ETL) through interactions with Sn 3d orbitals, thereby promoting a reduction in trap states. Devices prepared with Cs2CO3 treatment also exhibited an improvement in the power conversion efficiency (PCE) from 19.73% in a control device to 20.96% (AM 1.5G, 100 mW cm−2) in the champion device. The Cs2CO3 treated devices (CsFAMA) showed improved stability, with un-encapsulated devices retaining nearly 80% efficiency after 20 days in ambient air.
Hybrid inorganic-in-organic semiconductors are an attractive class of materials for optoelectronic applications. Traditionally, the thicknesses of organic semiconductors are kept below 1 μm due to poor charge transport in such systems. However, recent work suggests that charge carriers in such organic semiconductors can be transported over centimeter length scales opposing this view. In this work, a unipolar X-ray photoconductor based on a bulk heterojunction architecture, consisting of poly(3-hexylthiophene), a C70 derivative, and high atomic number bismuth oxide nanoparticles operating in the 0.1–1 mm thickness regime is demonstrated, having a high sensitivity of ∼160 μC mGy–1 cm–3. The high performance enabled by hole drift lengths approaching a millimeter facilitates a device architecture allowing a high fraction of the incident X-rays to be attenuated. An X-ray imager is demonstrated with sufficient resolution for security applications such as portable baggage screening at border crossings and public events and scalable medical applications.
Interface engineering is an effective means to enhance the performance of thin-film devices, such as perovskite solar cells (PSCs). Herein, a conjugated polyelectrolyte, poly[(9,9-bis(3?-((N,N-dimethyl)-N-ethyl-ammonium)-propyl)-2,7-fluorene)-alt-2,7-(9,9-dioctylfluorene)]di-iodide (PFN-I), is used at the interfaces between the hole transport layer (HTL)/perovskite and perovskite/electron transport layer simultaneously, to enhance the device power conversion efficiency (PCE) and stability. The fabricated PSCs with an inverted planar heterojunction structure show improved open-circuit voltage (Voc), short-circuit current density (Jsc), and fill factor, resulting in PCEs up to 20.56%. The devices maintain over 80% of their initial PCEs after 800 h of exposure to a relative humidity 35?55% at room temperature. All of these improvements are attributed to the functional PFN-I layers as they provide favorable interface contact and defect reduction.
A new model which comprehensively explains the working principles of contact-mode Triboelectric Nanogenerators (TENGs) based on Maxwell’s equations is presented. Unlike previous models which are restricted to known simple geometries and derived using the parallel plate capacitor model, this model is generic and can be modified to a wide range of geometries and surface topographies. We introduce the concept of a distance-dependent electric field, a factor not taken in to account in previous models, to calculate the current, voltage, charge, and power output under different experimental conditions. The versatality of the model is demonstrated for non-planar geometry consisting of a covex-conave surface. The theoretical results show excellent agreement with experimental TENGs. Our model provides a complete understanding of the working principles of TENGs, and accurately predicts the output trends, which enables the design of more efficient TENG structures.