Published: 13 October 2015

ATI researchers solve nano devices’ hysteresis challenge

Researchers at the ATI have developed a room-temperature, solution-based method, which can completely passivate and reduce trap density of nanomaterial-based devices, leading to near-zero hysteresis, high performance and reliable electronic applications.

The demonstration resulted in a dramatic suppression of nanomaterial’s hysteresis in ambient air environment with one-step processing stage, suitable for plastic and printed electronics.

“I think we have solved one of the main challenges in nanodevices,” says Dr. Maxim Shkunov, the leader of the project.  “Nanomaterials intrinsically have a very large surface area and are highly susceptible to the adsorption of various polar molecules from the air, one of the worst ones being water. If these molecules end up in a nano-transistor channel, for example, they can almost ruin electrical response by trapping charges (electrons and holes). We found a way to gently ‘oxidise’ the nanoparticle surface with a simple solvent-based procedure, eliminating nasty trap sites. Our data shows more than two-order of magnitude reduction in the density of these traps, and nanowire transistors display very stable performance in air”.

This work is a result of international collaboration between Surrey and University of Texas, Austin (Prof Brian A. Korgel) in the United States.

The paper “Interface Passivation and Trap Reduction via a Solution-Based Method for Near-Zero Hysteresis Nanowire Field-Effect Transistors” is available on ACS website.

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