over decades through an aggressive scaling process
following Moore?s law with increasingly complex device
structures. Simultaneously, large-area electronics have
continued to rely on the same field-effect transistor structure with minimal evolution. This limitation has resulted in less than ideal circuit designs, with increased complexity to account for shortcomings in material properties and process control. At present, this situation is holding back the development of novel systems required for printed and flexible electronic applications beyond the Internet of Things.
In this work we demonstrate the opportunity offered by the
source-gated transistor?s unique properties for low-cost,
highly functional large-area applications in two extremely
compact circuit blocks. Polysilicon common-source
amplifiers show 49 dB gain, the highest reported for a twotransistor
unipolar circuit. Current mirrors fabricated in
polysilicon and InGaZnO have, in addition to excellent current copying performance, the ability to control the temperature dependence (degrees of positive, neutral or negative) of
output current solely by choice of relative transistor
geometry, giving further flexibility to the design engineer.
Application examples are proposed, including local
amplification of sensor output for improved signal integrity, as well as temperature-regulated delay stages and timing circuits for homeostatic operation in future wearables. Numerous applications will benefit from these highly competitive compact circuit designs with robust performance, improved energy efficiency and tolerance to geometrical variations: sensor front-ends, temperature sensors, pixel drivers, bias analog blocks and high-gain amplifiers.