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Dr Konstanze Hild


Teaching Fellow in Advanced Technology Institute

Academic and research departments

Advanced Technology Institute.

Biography

Biography

Since 2016 working as a Teaching Fellow in the Physics Department.

From 2016-2018 also working as a project facilitator helping researchers to develop new techniques to address to antimicrobial resistance challenge. 

From January 2011 working as a Research Fellow on the optical characterisation of bismuth containing semiconductors. Applications for this range from more temperature sensitive telecommunications lasers to novel solar cell designs. Recently also getting involved into research of solid state lighting, not only from the technology side but also with respect to the human response.

2005-2008 Research Assistant (University of Surrey) working on GaAsSb based lasers for emission at 1.3 microns.

2000-2003 University of Surrey. The PhD work (Surrey 2003) concerned the spectroscopy (photomodulated reflectance) and device measurements of Resonant Cavity LEDs emitting at 650nm.

1994-2000 Universität Dortmund. Working on the spectroscopy of single excitonic states in II-VI semiconductor structures for the Diplom obtained in January 2000.

Research interests

Improving the performance of LEDs and lasers.

Influence of light on humans.

New ways of addressing the antimicrobial resistance challenge.

Teaching

Level 1 Laboratories

Level 1 Small group tutorials

Level 1 Properties of Matter

Level 2 Laboratories

My publications

Publications

Ikyo BA, Marko IP, Hild K, Adams AR, Sweeney SJ, Arafin S, Amann M-C (2013)The effect of hole leakage and auger recombination on the temperature sensitivity of GaInAsSb/GaSb mid-infrared lasers, In: Lasers and Electro-Optics Europe (CLEO EUROPE/IQEC), 2013 Conference on and International Quantum Electronics Conference
Batool Z, Chatterjee S, Chernikov A, Duzik A, Fritz R, Gogineni C, Hild K, Hosea TJC, Imhof S, Johnson SR, Jiang Z, Jin S, Koch M, Koch SW, Masnadi-Shirazi M, Kolata K, Lewis RB, Lu X, Millunchick JM, Mooney PM, Riordan NA, Rubel O, Sweeney SJ, Volz K, Thomas JC, Thränhardt A, Tiedje T (2013)Bismuth-containing III-V semiconductors: Epitaxial growth and physical propertiespp. 139-158
Hossain N, Hild K, Jin SR, Sweeney SJ, Yu S-Q, Johnson SR, Ding D, Zhang Y-H (2010)Influence of device structures on carrier recombination in GaAsSb/GaAs QW lasers, In: Proceedings of Photonics Global Conference
Bushell Z, Stolz W, Volz K, Broderick CA, Usman M, Harnedy PE, O'Reilly EP, Butkute R, Pacebutas V, Geizutis A, Krotkus A, Jin SR, Sweeney SJ, Marko IP, Hild K, Batool Z, Natterman L, Ludewig P (2014)Electrically injected GaAsBi Quantum Well Lasers, In: 2014 24TH IEEE INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE (ISLC 2014)pp. 80-81
Sweeney Stephen, Broderick CA, Jin S, Marko Igor, Hild Konstanze, Ludewig P, Bushell Zoe, Stolz W, Rorison JM, O’Reilly EP, Volz K (2017)GaAs1−xBix/GaNyAs1−y type-II quantum wells: novel strain-balanced heterostructures for GaAs-based near- and mid-infrared photonics, In: Scientific Reports746371 Nature Publishing Group
Marko I, Sweeney S, hild K (2016)Temperature stable mid-infrared GaInAsSb/GaSb Vertical Cavity Surface Emitting Lasers (VCSELs), In: Scientific Reports619595 Nature Publishing Group
Hossain N, Hild K, Jin S, Sweeney SJ, Yu S-Q, Johnson SR, Ding D, Zhang Y-H (2010)Role of growth temperature on the physical characteristics of GaAsSb/GaAs QW lasers, In: 23rd Annual Meeting of the IEEE Photonics Societypp. 59-60
Hild K, Batool Z, Jin SR, Hossain N, Marko IP, Hosea TJC, Lu X, Tiedje T, Sweeney SJ (2013)Auger Recombination Suppression And Band Alignment In GaAsBi/GaAs Heterostructures, In: Ihn T, Rossler C, Kozikov A, (eds.), PHYSICS OF SEMICONDUCTORS1566pp. 488-489
Sweeney SJ, Hild K, Marko IP, Yu S-Q, Johnson SR, Zhang Y-H (2008)Thermal characteristics of 1.3 mu m GaAsSb/GaAs-based Edge- and Surface-emitting Lasers, In: 2008 IEEE 21ST INTERNATIONAL SEMICONDUCTOR LASER CONFERENCEpp. 83-84
Hild K, Sweeney SJ, Marko IP, Jin SR, Johnson SR, Chaparro SA, Yu S, Zhang Y-H (2007)Temperature and pressure dependence of carrier recombination processes in GaAsSb/GaAs quantum well lasers, In: PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS244(1)pp. 197-202
Sweeney SJ, Hild K, Jin S (2013)The potential of GaAsBiN for multi-junction solar cells, In: 2013 IEEE 39TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC)pp. 2474-2478 IEEE
Bushell ZL, Ludewig P, Knaub N, Batool Z, Hild K, Stolz W, Sweeney SJ, Volz K (2014)Growth and characterisation of Ga(NAsSi) alloy by metal-organic vapour phase epitaxy, In: JOURNAL OF CRYSTAL GROWTH396pp. 79-84 ELSEVIER SCIENCE BV
Batool Z, Hild K, Hosea TJC, Lu X, Tiedje T, Sweeney SJ (2012)The electronic band structure of GaBiAs/GaAs layers: Influence of strain and band anti-crossing, In: JOURNAL OF APPLIED PHYSICS111(11)ARTN 1pp. ?-? AMER INST PHYSICS
Hossain N, Hild K, Jin SR, Yu S-Q, Johnson SR, Ding D, Zhang Y-H, Sweeney SJ (2013)The influence of growth conditions on carrier recombination mechanisms in 1.3 mu m GaAsSb/GaAs quantum well lasers, In: APPLIED PHYSICS LETTERS102(4)ARTN 0pp. ?-? AMER INST PHYSICS
Bonmati-Carrion María Ángeles, Hild Konstanze, Isherwood Cheryl, Sweeney Stephen J, Revell Victoria, Madrid Juan Antonio, Rol María Ángeles, Skene Debra (2018)Effect of single and combined monochromatic light on the human pupillary light response, In: Frontiers in Neurology91019 Frontiers Media
Hosea TJC, Cripps SA, Sale TE, Hild K (2006)Analysis of reflectance and modulation spectroscopic lineshapes in optoelectronic device structures, In: APPLIED SURFACE SCIENCE253(1)pp. 70-79
Hossain N, Marko IP, Jin SR, Hild K, Sweeney SJ, Lewis RB, Beaton DA, Tiedje T (2012)Recombination mechanisms and band alignment of GaAs1-xBix/GaAs light emitting diodes, In: APPLIED PHYSICS LETTERS100(5)ARTN 0pp. ?-? AMER INST PHYSICS
Chai GMT, Hosea TJC, Fox NE, Hild K, Ikyo AB, Marko IP, Sweeney SJ, Bachmann A, Arafin S, Amann M-C (2014)Characterization of 2.3 mu m GaInAsSb-based vertical-cavity surface-emitting laser structures using photo-modulated reflectance, In: JOURNAL OF APPLIED PHYSICS115(1)ARTN 0pp. ?-? AMER INST PHYSICS
Bonmati-Carrion MA, Hild K, Isherwood C, Sweeney SJ, Revell VL, Skene DJ, Rol MA, Madrid JA (2016)Relationship between Human Pupillary Light Reflex and Circadian System Status, In: PLoS One11(9)e0162476 Public Library of Science (PLoS)
Hild K, Sale TE, Hirotani M, Mizuno Y, Kato T (2003)Leakage current and self-heating in 650 nm resonant-cavity LEDs, In: Conference on Lasers and Electro-Optics Europe - Technical Digestpp. 183-?
Hosea TJC, Chai GMT, Marko IP, Batool Z, Hild K, Jin SR, Hossain N, Sweeney SJ, Petropoulos JP, Zhong Y, Dongmo PB, Zide JMO (2012)InGaBiAs/InP semiconductors for mid-infrared applications: Dependence of bandgap and spin-orbit splitting on temperature and bismuth content, In: ICP 2012 - 3rd International Conference on Photonics 2012, Proceedingspp. 154-158
Usman M, Broderick CA, Batool Z, Hild K, Hosea TJC, Sweeney SJ, O'Reilly EP (2013)Impact of alloy disorder on the band structure of compressively strained GaBixAs1-x, In: PHYSICAL REVIEW B87(11)ARTN 1pp. ?-? AMER PHYSICAL SOC
Ludewig P, Knaub N, Hossain N, Reinhard S, Nattermann L, Marko IP, Jin SR, Hild K, Chatterjee S, Stolz W, Sweeney SJ, Volz K (2013)Electrical injection Ga(AsBi)/(AlGa)As single quantum well laser, In: APPLIED PHYSICS LETTERS102(24)ARTN 2pp. ?-? AMER INST PHYSICS
Blume G, Hild K, Marko IP, Hosea TJC, Yu S-Q, Chaparro SA, Samal N, Johnson SR, Zhang Y-H, Sweeney SJ (2012)Cavity mode gain alignment in GaAsSb-based near-infrared vertical cavity lasers studied by spectroscopy and device measurements, In: JOURNAL OF APPLIED PHYSICS112(3)ARTN 0pp. ?-? AMER INST PHYSICS
Sale TE, Hild K, Hosea TJC, Hirotani M, Kato Y (2004)Reflectivity fitting for accurate thickness and compositional determination in RCLEDs, In: Stockman SA, Yao HW, Schubert EF, (eds.), LIGHT -EMITTING DIODES: RESEARCH, MANUFACTURING, AND APPLICATIONS VIII5366pp. 191-199
Hild K, Sale TE, Hosea TJC, Hirotani M, Hirotani M, Kato T (2001)Spectral and thermal properties of red AlGaInP RCLEDs for polymer optical fibre applications, In: IEE PROCEEDINGS-OPTOELECTRONICS148(5-6)pp. 220-224 IEE-INST ELEC ENG
Marko IP, Bushell ZL, Jin SR, Hild K, Batool Z, Sweeney SJ, Ludewig P, Reinhard S, Nattermann L, Stolz W, Volz K (2014)Physical properties and optimization of GaBiAs/(Al)GaAs based near-infrared laser diodes grown by MOVPE with up to 4.4% Bi, In: Journal of Physics D: Applied Physics47(34)
Hild K, Marko IP, Johnson SR, Yu S-Q, Zhang Y-H, Sweeney SJ (2011)Influence of de-tuning and non-radiative recombination on the temperature dependence of 1.3 mu m GaAsSb/GaAs vertical cavity surface emitting lasers, In: APPLIED PHYSICS LETTERS99(7)ARTN 0pp. ?-? AMER INST PHYSICS
Hild K, Sweeney SJ, Jin SR, Healy SB, O'Rellly EP, Johnson SR, Wang J-B, Zhang Y-H, Jantsch W, Schaffler F (2007)Band alignment and carrier recombination in GaAsSb/GaAs quantum wells, In: Physics of Semiconductors, Pts A and B893pp. 1431-1432
Hild K, Sweeney SJ, Wright S, Lock DA, Jin SR, Marko IP, Johnson SR, Chaparro SA, Yu S-Q, Zhang Y-H (2006)Carrier recombination in 1.3 mu m GaAsSb/GaAs quantum well lasers, In: APPLIED PHYSICS LETTERS89(17)ARTN 1pp. ?-? AMER INST PHYSICS
Hild Konstanze, Sweeney Stephen, Lock DA, Wright S, Wang JB, Johnson SR, Zhang YH (2005)On the thermal stability of 1.3 mu m GaAsSb/GaAs-based lasers, In: 2005 IEEE LEOS Annual Meeting Conference Proceedings (LEOS)pp. 330-331 IEEE